GB1320290A - Protective circuit for an insulated gate field effect transistor - Google Patents

Protective circuit for an insulated gate field effect transistor

Info

Publication number
GB1320290A
GB1320290A GB2387372A GB2387372A GB1320290A GB 1320290 A GB1320290 A GB 1320290A GB 2387372 A GB2387372 A GB 2387372A GB 2387372 A GB2387372 A GB 2387372A GB 1320290 A GB1320290 A GB 1320290A
Authority
GB
United Kingdom
Prior art keywords
igfet
protected
protective
gate electrode
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2387372A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NCR Voyix Corp
National Cash Register Co
Original Assignee
NCR Corp
National Cash Register Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NCR Corp, National Cash Register Co filed Critical NCR Corp
Publication of GB1320290A publication Critical patent/GB1320290A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
GB2387372A 1971-06-08 1972-05-22 Protective circuit for an insulated gate field effect transistor Expired GB1320290A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15097271A 1971-06-08 1971-06-08

Publications (1)

Publication Number Publication Date
GB1320290A true GB1320290A (en) 1973-06-13

Family

ID=22536786

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2387372A Expired GB1320290A (en) 1971-06-08 1972-05-22 Protective circuit for an insulated gate field effect transistor

Country Status (5)

Country Link
CA (1) CA980012A (cg-RX-API-DMAC7.html)
DE (1) DE2227339A1 (cg-RX-API-DMAC7.html)
FR (1) FR2140436B3 (cg-RX-API-DMAC7.html)
GB (1) GB1320290A (cg-RX-API-DMAC7.html)
IT (1) IT956338B (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2531846A1 (de) * 1974-07-16 1976-01-29 Nippon Electric Co Integrierter halbleiterschaltkreis

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58119670A (ja) * 1982-01-11 1983-07-16 Nissan Motor Co Ltd 半導体装置
IT1213260B (it) * 1984-12-18 1989-12-14 Sgs Thomson Microelectronics Circuito a ponte di transistori mos di potenza a canale n integrato eprocedimento per la sua fabbricazione.
US5399893A (en) * 1993-08-24 1995-03-21 Motorola, Inc. Diode protected semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2531846A1 (de) * 1974-07-16 1976-01-29 Nippon Electric Co Integrierter halbleiterschaltkreis

Also Published As

Publication number Publication date
FR2140436B3 (cg-RX-API-DMAC7.html) 1975-08-08
FR2140436A1 (cg-RX-API-DMAC7.html) 1973-01-19
IT956338B (it) 1973-10-10
CA980012A (en) 1975-12-16
DE2227339A1 (de) 1972-12-21

Similar Documents

Publication Publication Date Title
GB1337220A (en) Monolithic entegrated circuit
US3395290A (en) Protective circuit for insulated gate metal oxide semiconductor fieldeffect device
US4509067A (en) Semiconductor integrated circuit devices with protective means against overvoltages
US3403270A (en) Overvoltage protective circuit for insulated gate field effect transistor
NL7800846A (en) Insulated gate FET cct. device with protective diode - includes auxiliary means to prevent minority carriers from diode reaching drain
KR850000804A (ko) 반도체 장치
JPS577969A (en) Semiconductor integrated circuit
GB1304728A (cg-RX-API-DMAC7.html)
GB1524864A (en) Monolithic semiconductor arrangements
GB1166568A (en) MOS Type Devices with Protection Against Destructive Breakdown
GB1197154A (en) High Voltage Transient Protection for an Insulated Gate Field Effect Transistor
GB1518984A (en) Integrated circuit
KR880700466A (ko) 정전기 보호 집적 회로
GB1186421A (en) Insulated-Gate Field-Effect Transistor
GB1309049A (en) Integrated circuit with a protective input circuit
GB1357553A (en) Insulated-gate field effect transistors
GB1322933A (en) Semiconductor device
GB1134998A (en) Improvements in or relating to insulated gate field effect transistors
GB1131675A (en) Semiconductor device
GB1378148A (en) Insulated gate field effect transistor and transistor arrangement
JPS5745975A (en) Input protecting device for semiconductor device
JPS5679463A (en) Semiconductor integrated circuit
JPS5762564A (en) Tunnel effect type protecting device
GB1179388A (en) Electrical Protective Circuit for Metal-Oxide-Semiconductor Transistors
GB1255414A (en) Protection means for semiconductor components

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees