IT956338B - Circuito di protezione - Google Patents
Circuito di protezioneInfo
- Publication number
- IT956338B IT956338B IT2537372A IT2537372A IT956338B IT 956338 B IT956338 B IT 956338B IT 2537372 A IT2537372 A IT 2537372A IT 2537372 A IT2537372 A IT 2537372A IT 956338 B IT956338 B IT 956338B
- Authority
- IT
- Italy
- Prior art keywords
- protection circuit
- protection
- circuit
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15097271A | 1971-06-08 | 1971-06-08 |
Publications (1)
Publication Number | Publication Date |
---|---|
IT956338B true IT956338B (it) | 1973-10-10 |
Family
ID=22536786
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT2537372A IT956338B (it) | 1971-06-08 | 1972-06-07 | Circuito di protezione |
Country Status (5)
Country | Link |
---|---|
CA (1) | CA980012A (it) |
DE (1) | DE2227339A1 (it) |
FR (1) | FR2140436B3 (it) |
GB (1) | GB1320290A (it) |
IT (1) | IT956338B (it) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2531846C2 (de) * | 1974-07-16 | 1989-12-14 | Nippon Electric Co., Ltd., Tokyo | Schutzschaltungsanordnung für einen Isolierschicht-Feldeffekttransistor |
JPS58119670A (ja) * | 1982-01-11 | 1983-07-16 | Nissan Motor Co Ltd | 半導体装置 |
IT1213260B (it) * | 1984-12-18 | 1989-12-14 | Sgs Thomson Microelectronics | Circuito a ponte di transistori mos di potenza a canale n integrato eprocedimento per la sua fabbricazione. |
US5399893A (en) * | 1993-08-24 | 1995-03-21 | Motorola, Inc. | Diode protected semiconductor device |
-
1972
- 1972-04-10 CA CA139,341A patent/CA980012A/en not_active Expired
- 1972-05-22 GB GB2387372A patent/GB1320290A/en not_active Expired
- 1972-06-05 FR FR7220057A patent/FR2140436B3/fr not_active Expired
- 1972-06-06 DE DE19722227339 patent/DE2227339A1/de active Pending
- 1972-06-07 IT IT2537372A patent/IT956338B/it active
Also Published As
Publication number | Publication date |
---|---|
FR2140436B3 (it) | 1975-08-08 |
CA980012A (en) | 1975-12-16 |
DE2227339A1 (de) | 1972-12-21 |
GB1320290A (en) | 1973-06-13 |
FR2140436A1 (it) | 1973-01-19 |
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