GB1308888A - Metal insulator-semiconductor field effect transistor devices - Google Patents

Metal insulator-semiconductor field effect transistor devices

Info

Publication number
GB1308888A
GB1308888A GB59172A GB59172A GB1308888A GB 1308888 A GB1308888 A GB 1308888A GB 59172 A GB59172 A GB 59172A GB 59172 A GB59172 A GB 59172A GB 1308888 A GB1308888 A GB 1308888A
Authority
GB
United Kingdom
Prior art keywords
layer
thermally
sio
polycrystalline
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB59172A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
ITT Inc
Original Assignee
Deutsche ITT Industries GmbH
ITT Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH, ITT Industries Inc filed Critical Deutsche ITT Industries GmbH
Publication of GB1308888A publication Critical patent/GB1308888A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36—Unipolar devices
    • H10P95/00—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
GB59172A 1971-01-11 1972-01-06 Metal insulator-semiconductor field effect transistor devices Expired GB1308888A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10529171A 1971-01-11 1971-01-11

Publications (1)

Publication Number Publication Date
GB1308888A true GB1308888A (en) 1973-03-07

Family

ID=22305027

Family Applications (1)

Application Number Title Priority Date Filing Date
GB59172A Expired GB1308888A (en) 1971-01-11 1972-01-06 Metal insulator-semiconductor field effect transistor devices

Country Status (5)

Country Link
US (1) US3749610A (enExample)
AU (1) AU464039B2 (enExample)
DE (1) DE2162219A1 (enExample)
FR (1) FR2121725A1 (enExample)
GB (1) GB1308888A (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3853633A (en) * 1972-12-04 1974-12-10 Motorola Inc Method of making a semi planar insulated gate field-effect transistor device with implanted field
JPS5633864B2 (enExample) * 1972-12-06 1981-08-06
US4041518A (en) * 1973-02-24 1977-08-09 Hitachi, Ltd. MIS semiconductor device and method of manufacturing the same
US3852120A (en) * 1973-05-29 1974-12-03 Ibm Method for manufacturing ion implanted insulated gate field effect semiconductor transistor devices
US3883372A (en) * 1973-07-11 1975-05-13 Westinghouse Electric Corp Method of making a planar graded channel MOS transistor
DE2341311C3 (de) * 1973-08-16 1981-07-09 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Einstellen der Lebensdauer von Ladungsträgern in Halbleiterkörpern
US4057824A (en) * 1976-04-30 1977-11-08 Rca Corporation P+ Silicon integrated circuit interconnection lines
KR0170312B1 (ko) * 1995-06-23 1999-02-01 김광호 고집적 dram 셀 및 그 제조방법
US5943576A (en) * 1998-09-01 1999-08-24 National Semiconductor Corporation Angled implant to build MOS transistors in contact holes
US6074919A (en) * 1999-01-20 2000-06-13 Advanced Micro Devices, Inc. Method of forming an ultrathin gate dielectric

Also Published As

Publication number Publication date
US3749610A (en) 1973-07-31
FR2121725A1 (enExample) 1972-08-25
DE2162219A1 (de) 1972-08-03
AU464039B2 (en) 1975-08-14
AU3774072A (en) 1973-07-12

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees