FR2121725A1 - - Google Patents

Info

Publication number
FR2121725A1
FR2121725A1 FR7200708A FR7200708A FR2121725A1 FR 2121725 A1 FR2121725 A1 FR 2121725A1 FR 7200708 A FR7200708 A FR 7200708A FR 7200708 A FR7200708 A FR 7200708A FR 2121725 A1 FR2121725 A1 FR 2121725A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7200708A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
ITT Inc
Original Assignee
Deutsche ITT Industries GmbH
ITT Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH, ITT Industries Inc filed Critical Deutsche ITT Industries GmbH
Publication of FR2121725A1 publication Critical patent/FR2121725A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
FR7200708A 1971-01-11 1972-01-11 Withdrawn FR2121725A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10529171A 1971-01-11 1971-01-11

Publications (1)

Publication Number Publication Date
FR2121725A1 true FR2121725A1 (fr) 1972-08-25

Family

ID=22305027

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7200708A Withdrawn FR2121725A1 (fr) 1971-01-11 1972-01-11

Country Status (5)

Country Link
US (1) US3749610A (fr)
AU (1) AU464039B2 (fr)
DE (1) DE2162219A1 (fr)
FR (1) FR2121725A1 (fr)
GB (1) GB1308888A (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3853633A (en) * 1972-12-04 1974-12-10 Motorola Inc Method of making a semi planar insulated gate field-effect transistor device with implanted field
JPS5633864B2 (fr) * 1972-12-06 1981-08-06
US4041518A (en) * 1973-02-24 1977-08-09 Hitachi, Ltd. MIS semiconductor device and method of manufacturing the same
US3852120A (en) * 1973-05-29 1974-12-03 Ibm Method for manufacturing ion implanted insulated gate field effect semiconductor transistor devices
US3883372A (en) * 1973-07-11 1975-05-13 Westinghouse Electric Corp Method of making a planar graded channel MOS transistor
DE2341311C3 (de) * 1973-08-16 1981-07-09 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Einstellen der Lebensdauer von Ladungsträgern in Halbleiterkörpern
US4057824A (en) * 1976-04-30 1977-11-08 Rca Corporation P+ Silicon integrated circuit interconnection lines
KR0170312B1 (ko) * 1995-06-23 1999-02-01 김광호 고집적 dram 셀 및 그 제조방법
US5943576A (en) 1998-09-01 1999-08-24 National Semiconductor Corporation Angled implant to build MOS transistors in contact holes
US6074919A (en) * 1999-01-20 2000-06-13 Advanced Micro Devices, Inc. Method of forming an ultrathin gate dielectric

Also Published As

Publication number Publication date
US3749610A (en) 1973-07-31
GB1308888A (en) 1973-03-07
AU464039B2 (en) 1975-08-14
AU3774072A (en) 1973-07-12
DE2162219A1 (de) 1972-08-03

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Legal Events

Date Code Title Description
ST Notification of lapse