GB1301345A - - Google Patents
Info
- Publication number
- GB1301345A GB1301345A GB1301345DA GB1301345A GB 1301345 A GB1301345 A GB 1301345A GB 1301345D A GB1301345D A GB 1301345DA GB 1301345 A GB1301345 A GB 1301345A
- Authority
- GB
- United Kingdom
- Prior art keywords
- region
- conductivity type
- island
- forming
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 abstract 3
- 239000000969 carrier Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
- H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/63—Combinations of vertical and lateral BJTs
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL6906105.A NL161923C (nl) | 1969-04-18 | 1969-04-18 | Halfgeleiderinrichting. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1301345A true GB1301345A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1972-12-29 |
Family
ID=19806745
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1301345D Expired GB1301345A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1969-04-18 | 1970-04-15 |
Country Status (10)
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA997481A (en) * | 1972-12-29 | 1976-09-21 | International Business Machines Corporation | Dc testing of integrated circuits and a novel integrated circuit structure to facilitate such testing |
| JPS5017180A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1973-06-13 | 1975-02-22 | ||
| US3931634A (en) * | 1973-06-14 | 1976-01-06 | Rca Corporation | Junction-isolated monolithic integrated circuit device with means for preventing parasitic transistor action |
| US3916431A (en) * | 1974-06-21 | 1975-10-28 | Rca Corp | Bipolar integrated circuit transistor with lightly doped subcollector core |
| JPS51163682U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1976-05-10 | 1976-12-27 | ||
| NL7800407A (nl) * | 1977-11-17 | 1979-05-21 | Philips Nv | Geientegreerde logische schakeling. |
| NL7712649A (nl) * | 1977-11-17 | 1979-05-21 | Philips Nv | Geientegreerde schakeling. |
| DE2835930C2 (de) * | 1978-08-17 | 1986-07-17 | Siemens AG, 1000 Berlin und 8000 München | Monolithisch integrierte Halbleiterschaltungsanordnung mit mindestens einem Lateraltransistor |
| FR2492165A1 (fr) * | 1980-05-14 | 1982-04-16 | Thomson Csf | Dispositif de protection contre les courants de fuite dans des circuits integres |
| JPS57162365A (en) * | 1981-03-30 | 1982-10-06 | Toshiba Corp | Semiconductor device |
| US4486770A (en) * | 1981-04-27 | 1984-12-04 | General Motors Corporation | Isolated integrated circuit transistor with transient protection |
| US4496849A (en) * | 1982-02-22 | 1985-01-29 | General Motors Corporation | Power transistor protection from substrate injection |
| FR2525818A1 (fr) * | 1982-04-23 | 1983-10-28 | Thomson Csf | Transistor npn a detection de saturation et circuits logiques comprenant un tel transistor |
| JPH0654777B2 (ja) * | 1985-02-12 | 1994-07-20 | キヤノン株式会社 | ラテラルトランジスタを有する回路 |
| US4710793A (en) * | 1985-09-04 | 1987-12-01 | Motorola, Inc. | Voltage comparator with hysteresis |
| JPS6288137U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1985-11-20 | 1987-06-05 | ||
| ATE116599T1 (de) * | 1989-01-13 | 1995-01-15 | Canon Kk | Aufzeichnungskopf. |
| US5066869A (en) * | 1990-04-09 | 1991-11-19 | Unitrode Corporation | Reset circuit with PNP saturation detector |
| DE4032831C2 (de) * | 1990-10-16 | 1996-07-18 | Siemens Ag | Transistoranordnung für bipolare integrierte Halbleiterschaltungen |
| JPH08504297A (ja) * | 1992-03-10 | 1996-05-07 | アナログ・ディバイセス・インコーポレーテッド | 集積回路保護バイアシングのための回路構造 |
| US6548878B1 (en) | 1998-02-05 | 2003-04-15 | Integration Associates, Inc. | Method for producing a thin distributed photodiode structure |
| US7217988B2 (en) * | 2004-06-04 | 2007-05-15 | International Business Machines Corporation | Bipolar transistor with isolation and direct contacts |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL261720A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1960-03-04 | |||
| US3177414A (en) * | 1961-07-26 | 1965-04-06 | Nippon Electric Co | Device comprising a plurality of transistors |
| NL293292A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1962-06-11 | |||
| NL297002A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1962-08-23 | 1900-01-01 | ||
| GB1030050A (en) * | 1963-11-13 | 1966-05-18 | Motorola Inc | Punchthrough breakdown rectifier |
| FR1475201A (fr) * | 1965-04-07 | 1967-03-31 | Itt | Dispositif plan à semi-conducteurs |
| US3395320A (en) * | 1965-08-25 | 1968-07-30 | Bell Telephone Labor Inc | Isolation technique for integrated circuit structure |
| FR1510057A (fr) * | 1966-12-06 | 1968-01-19 | Csf | Transistors intégrés complémentaires npn et pnp à collecteurs isolés |
-
1969
- 1969-04-18 NL NL6906105.A patent/NL161923C/xx not_active IP Right Cessation
-
1970
- 1970-04-01 US US24558A patent/US3676714A/en not_active Expired - Lifetime
- 1970-04-08 DE DE2016760A patent/DE2016760C3/de not_active Expired
- 1970-04-13 CA CA079902A patent/CA923628A/en not_active Expired
- 1970-04-15 JP JP45031670A patent/JPS4938070B1/ja active Pending
- 1970-04-15 CH CH559570A patent/CH508280A/de not_active IP Right Cessation
- 1970-04-15 GB GB1301345D patent/GB1301345A/en not_active Expired
- 1970-04-15 SE SE05144/70A patent/SE363702B/xx unknown
- 1970-04-16 BE BE749078D patent/BE749078A/xx unknown
- 1970-04-20 FR FR7014222A patent/FR2039285B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2039285B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1975-03-07 |
| NL161923C (nl) | 1980-03-17 |
| JPS4938070B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1974-10-15 |
| FR2039285A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1971-01-15 |
| SE363702B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1974-01-28 |
| CA923628A (en) | 1973-03-27 |
| DE2016760B2 (de) | 1978-12-07 |
| CH508280A (de) | 1971-05-31 |
| BE749078A (fr) | 1970-10-16 |
| US3676714A (en) | 1972-07-11 |
| DE2016760A1 (de) | 1970-11-05 |
| NL161923B (nl) | 1979-10-15 |
| NL6906105A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1970-10-20 |
| DE2016760C3 (de) | 1982-09-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |