GB1297509A - - Google Patents

Info

Publication number
GB1297509A
GB1297509A GB1297509DA GB1297509A GB 1297509 A GB1297509 A GB 1297509A GB 1297509D A GB1297509D A GB 1297509DA GB 1297509 A GB1297509 A GB 1297509A
Authority
GB
United Kingdom
Prior art keywords
region
substrate
drain
diffused
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1297509A publication Critical patent/GB1297509A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36—Unipolar devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
GB1297509D 1970-01-02 1970-12-11 Expired GB1297509A (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2000093A DE2000093C2 (de) 1970-01-02 1970-01-02 Feldeffekttransistor

Publications (1)

Publication Number Publication Date
GB1297509A true GB1297509A (enrdf_load_stackoverflow) 1972-11-22

Family

ID=5758966

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1297509D Expired GB1297509A (enrdf_load_stackoverflow) 1970-01-02 1970-12-11

Country Status (3)

Country Link
DE (1) DE2000093C2 (enrdf_load_stackoverflow)
FR (1) FR2075897B3 (enrdf_load_stackoverflow)
GB (1) GB1297509A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0748503B2 (ja) * 1988-11-29 1995-05-24 三菱電機株式会社 電界効果トランジスタの製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1153428A (en) * 1965-06-18 1969-05-29 Philips Nv Improvements in Semiconductor Devices.
GB1173150A (en) * 1966-12-13 1969-12-03 Associated Semiconductor Mft Improvements in Insulated Gate Field Effect Transistors

Also Published As

Publication number Publication date
DE2000093A1 (de) 1971-07-08
DE2000093C2 (de) 1982-04-01
FR2075897B3 (enrdf_load_stackoverflow) 1973-08-10
FR2075897A7 (enrdf_load_stackoverflow) 1971-10-15

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees