DE2000093C2 - Feldeffekttransistor - Google Patents

Feldeffekttransistor

Info

Publication number
DE2000093C2
DE2000093C2 DE2000093A DE2000093A DE2000093C2 DE 2000093 C2 DE2000093 C2 DE 2000093C2 DE 2000093 A DE2000093 A DE 2000093A DE 2000093 A DE2000093 A DE 2000093A DE 2000093 C2 DE2000093 C2 DE 2000093C2
Authority
DE
Germany
Prior art keywords
semiconductor body
drain
effect transistor
field effect
zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2000093A
Other languages
German (de)
English (en)
Other versions
DE2000093A1 (de
Inventor
6000 Frankfurt Licentia Patent-Verwaltungs-Gmbh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefunken Electronic GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Priority to DE2000093A priority Critical patent/DE2000093C2/de
Priority to GB1297509D priority patent/GB1297509A/en
Priority to FR707046906A priority patent/FR2075897B3/fr
Publication of DE2000093A1 publication Critical patent/DE2000093A1/de
Application granted granted Critical
Publication of DE2000093C2 publication Critical patent/DE2000093C2/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36—Unipolar devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
DE2000093A 1970-01-02 1970-01-02 Feldeffekttransistor Expired DE2000093C2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE2000093A DE2000093C2 (de) 1970-01-02 1970-01-02 Feldeffekttransistor
GB1297509D GB1297509A (enrdf_load_stackoverflow) 1970-01-02 1970-12-11
FR707046906A FR2075897B3 (enrdf_load_stackoverflow) 1970-01-02 1970-12-28

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2000093A DE2000093C2 (de) 1970-01-02 1970-01-02 Feldeffekttransistor

Publications (2)

Publication Number Publication Date
DE2000093A1 DE2000093A1 (de) 1971-07-08
DE2000093C2 true DE2000093C2 (de) 1982-04-01

Family

ID=5758966

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2000093A Expired DE2000093C2 (de) 1970-01-02 1970-01-02 Feldeffekttransistor

Country Status (3)

Country Link
DE (1) DE2000093C2 (enrdf_load_stackoverflow)
FR (1) FR2075897B3 (enrdf_load_stackoverflow)
GB (1) GB1297509A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0748503B2 (ja) * 1988-11-29 1995-05-24 三菱電機株式会社 電界効果トランジスタの製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1153428A (en) * 1965-06-18 1969-05-29 Philips Nv Improvements in Semiconductor Devices.
GB1173150A (en) * 1966-12-13 1969-12-03 Associated Semiconductor Mft Improvements in Insulated Gate Field Effect Transistors

Also Published As

Publication number Publication date
FR2075897B3 (enrdf_load_stackoverflow) 1973-08-10
DE2000093A1 (de) 1971-07-08
FR2075897A7 (enrdf_load_stackoverflow) 1971-10-15
GB1297509A (enrdf_load_stackoverflow) 1972-11-22

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Legal Events

Date Code Title Description
8125 Change of the main classification
D2 Grant after examination
8381 Inventor (new situation)

Free format text: BENEKING, HEINZ, PROF., DR., 5100 AACHEN, DE

8327 Change in the person/name/address of the patent owner

Owner name: TELEFUNKEN ELECTRONIC GMBH, 7100 HEILBRONN, DE

8339 Ceased/non-payment of the annual fee