GB1293807A - Semiconductor wafers sub-dividable into pellets and methods of fabricating same - Google Patents

Semiconductor wafers sub-dividable into pellets and methods of fabricating same

Info

Publication number
GB1293807A
GB1293807A GB5744269A GB5744269A GB1293807A GB 1293807 A GB1293807 A GB 1293807A GB 5744269 A GB5744269 A GB 5744269A GB 5744269 A GB5744269 A GB 5744269A GB 1293807 A GB1293807 A GB 1293807A
Authority
GB
United Kingdom
Prior art keywords
grooves
oxide
glass
wafer
division
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5744269A
Other languages
English (en)
Inventor
Gary S Sheldon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of GB1293807A publication Critical patent/GB1293807A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H01L2924/13033—TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H01L2924/13034—Silicon Controlled Rectifier [SCR]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Dicing (AREA)
  • Formation Of Insulating Films (AREA)
  • Thyristors (AREA)
GB5744269A 1968-12-09 1969-11-24 Semiconductor wafers sub-dividable into pellets and methods of fabricating same Expired GB1293807A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US78209368A 1968-12-09 1968-12-09

Publications (1)

Publication Number Publication Date
GB1293807A true GB1293807A (en) 1972-10-25

Family

ID=25124923

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5744269A Expired GB1293807A (en) 1968-12-09 1969-11-24 Semiconductor wafers sub-dividable into pellets and methods of fabricating same

Country Status (6)

Country Link
BE (1) BE742700A (enrdf_load_stackoverflow)
DE (1) DE1961230C3 (enrdf_load_stackoverflow)
FR (1) FR2025718B1 (enrdf_load_stackoverflow)
GB (1) GB1293807A (enrdf_load_stackoverflow)
IE (1) IE33405B1 (enrdf_load_stackoverflow)
SE (1) SE367281B (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2600321A1 (de) * 1975-01-16 1976-07-22 Philips Nv Verfahren zur herstellung von halbleiteranordnungen, bei dem auf eine halbleiterscheibe ein glasueberzug angebracht wird, und durch dieses verfahren hergestellte halbleiteranordnungen
DE3143216A1 (de) * 1980-10-31 1982-06-03 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Halbleitervorrichtung und verfahren zur herstellung einer halbleitervorrichtung

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3247938A1 (de) * 1982-12-24 1984-07-05 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Halbleiterbauelement hoher sperrspannungsbelastbarkeit
US4822757A (en) * 1987-11-10 1989-04-18 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method of manufacturing the same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE666930C (de) * 1936-09-26 1938-11-01 Philips Patentverwaltung Verfahren zum Herstellen einer Deckschicht
FR1347043A (fr) * 1961-09-29 1963-12-27 Ibm Objets revêtus et procédés de réalisation de leurs revêtements protecteurs
DE1439460A1 (de) * 1964-10-19 1968-12-12 Siemens Ag Elektrisches Bauelement,insbesondere Halbleiterbauelement,mit einer aus isolierendemStoff bestehenden Huelle
US3505571A (en) * 1965-09-30 1970-04-07 Gen Electric Glass covered semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2600321A1 (de) * 1975-01-16 1976-07-22 Philips Nv Verfahren zur herstellung von halbleiteranordnungen, bei dem auf eine halbleiterscheibe ein glasueberzug angebracht wird, und durch dieses verfahren hergestellte halbleiteranordnungen
DE3143216A1 (de) * 1980-10-31 1982-06-03 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Halbleitervorrichtung und verfahren zur herstellung einer halbleitervorrichtung

Also Published As

Publication number Publication date
IE33405L (en) 1970-06-09
FR2025718B1 (enrdf_load_stackoverflow) 1974-05-24
SE367281B (enrdf_load_stackoverflow) 1974-05-20
DE1961230B2 (de) 1974-02-21
FR2025718A1 (enrdf_load_stackoverflow) 1970-09-11
IE33405B1 (en) 1974-06-12
BE742700A (enrdf_load_stackoverflow) 1970-06-05
DE1961230C3 (de) 1974-09-26
DE1961230A1 (de) 1970-06-25

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Legal Events

Date Code Title Description
PS Patent sealed
746 Register noted 'licences of right' (sect. 46/1977)
PE20 Patent expired after termination of 20 years