GB1290194A - - Google Patents

Info

Publication number
GB1290194A
GB1290194A GB1290194DA GB1290194A GB 1290194 A GB1290194 A GB 1290194A GB 1290194D A GB1290194D A GB 1290194DA GB 1290194 A GB1290194 A GB 1290194A
Authority
GB
United Kingdom
Prior art keywords
metal
layers
semi
layer
metal layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1290194A publication Critical patent/GB1290194A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
GB1290194D 1969-01-02 1969-12-30 Expired GB1290194A (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6900054.A NL159822B (nl) 1969-01-02 1969-01-02 Halfgeleiderinrichting.

Publications (1)

Publication Number Publication Date
GB1290194A true GB1290194A (enExample) 1972-09-20

Family

ID=19805785

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1290194D Expired GB1290194A (enExample) 1969-01-02 1969-12-30

Country Status (13)

Country Link
US (1) US3942187A (enExample)
JP (1) JPS4813868B1 (enExample)
AT (1) AT318003B (enExample)
BE (1) BE743979A (enExample)
BR (1) BR6915742D0 (enExample)
CH (1) CH505465A (enExample)
DE (1) DE1965546C3 (enExample)
ES (1) ES375119A1 (enExample)
FR (1) FR2027664B1 (enExample)
GB (1) GB1290194A (enExample)
NL (1) NL159822B (enExample)
SE (1) SE354542B (enExample)
ZA (1) ZA69880B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2353770A1 (de) * 1972-11-10 1974-05-16 Philips Nv Halbleiteranordnung
GB2157079A (en) * 1984-03-30 1985-10-16 Mitsubishi Electric Corp Electrode arrangement for semiconductor devices
GB2168845A (en) * 1984-12-20 1986-06-25 Mitsubishi Electric Corp Electrode arrangement for semiconductor devices

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3654526A (en) * 1970-05-19 1972-04-04 Texas Instruments Inc Metallization system for semiconductors
JPS51147253A (en) * 1975-06-13 1976-12-17 Nec Corp Structure of electrode terminal
JPS5851425B2 (ja) * 1975-08-22 1983-11-16 株式会社日立製作所 ハンドウタイソウチ
JPS5247686A (en) * 1975-10-15 1977-04-15 Toshiba Corp Semiconductor device and process for production of same
US4112196A (en) * 1977-01-24 1978-09-05 National Micronetics, Inc. Beam lead arrangement for microelectronic devices
NL7704186A (nl) * 1977-04-18 1978-10-20 Philips Nv Werkwijze voor het galvanisch versterken van een geleidend basispatroon en inrichting ver- kregen met behulp van de werkwijze.
JPS5421165A (en) * 1977-07-18 1979-02-17 Nec Corp Semiconductor device
JPS55122821U (enExample) * 1979-02-23 1980-09-01
JPS55163025U (enExample) * 1979-05-09 1980-11-22
JPS55156365A (en) * 1979-05-24 1980-12-05 Toshiba Corp Semiconductor device
JPS55171321U (enExample) * 1979-05-28 1980-12-09
US4394678A (en) * 1979-09-19 1983-07-19 Motorola, Inc. Elevated edge-protected bonding pedestals for semiconductor devices
US4316200A (en) * 1980-03-07 1982-02-16 International Business Machines Corporation Contact technique for electrical circuitry
JPS5925387B2 (ja) * 1980-06-10 1984-06-16 株式会社東芝 半導体装置
DE3141014A1 (de) * 1981-10-15 1983-04-28 Siemens AG, 1000 Berlin und 8000 München Integrierte schaltung
US4514751A (en) * 1982-12-23 1985-04-30 International Business Machines Corporation Compressively stresses titanium metallurgy for contacting passivated semiconductor devices
JPS59198734A (ja) * 1983-04-25 1984-11-10 Mitsubishi Electric Corp 多層配線構造
US4600658A (en) * 1983-11-07 1986-07-15 Motorola, Inc. Metallization means and method for high temperature applications
US4495222A (en) * 1983-11-07 1985-01-22 Motorola, Inc. Metallization means and method for high temperature applications
US4571451A (en) * 1984-06-04 1986-02-18 International Business Machines Corporation Method for routing electrical connections and resulting product
US4953003A (en) * 1987-05-21 1990-08-28 Siemens Aktiengesellschaft Power semiconductor device
EP0307272A3 (en) * 1987-09-09 1989-07-12 STMicroelectronics, Inc. Aluminum alloy semiconductor interconnections having high purity titanium or niobium barrier layer
JPH0295531U (enExample) * 1989-01-20 1990-07-30
JPH05206139A (ja) * 1991-11-19 1993-08-13 Nec Corp 基板接続電極およびその製造方法
US5249728A (en) * 1993-03-10 1993-10-05 Atmel Corporation Bumpless bonding process having multilayer metallization
US6388203B1 (en) 1995-04-04 2002-05-14 Unitive International Limited Controlled-shaped solder reservoirs for increasing the volume of solder bumps, and structures formed thereby
KR100425750B1 (ko) 1995-04-05 2004-07-16 유나이티브 인터내셔널 리미티드 마이크로일렉트로닉 기판용 솔더범프구조체
KR100327442B1 (ko) * 1995-07-14 2002-06-29 구본준, 론 위라하디락사 반도체소자의범프구조및형성방법
US5793116A (en) * 1996-05-29 1998-08-11 Mcnc Microelectronic packaging using arched solder columns
US5905308A (en) * 1996-11-25 1999-05-18 Texas Instruments Incorporated Bond pad for integrated circuit
DE69706194T2 (de) * 1997-01-16 2002-07-04 Ford Motor Co. Ltd., Brentwood Verfahren zum dotieren eines metallischen verbindungsdrahtes
US5990472A (en) * 1997-09-29 1999-11-23 Mcnc Microelectronic radiation detectors for detecting and emitting radiation signals
AU2002228926A1 (en) * 2000-11-10 2002-05-21 Unitive Electronics, Inc. Methods of positioning components using liquid prime movers and related structures
US6863209B2 (en) 2000-12-15 2005-03-08 Unitivie International Limited Low temperature methods of bonding components
WO2004001837A2 (en) * 2002-06-25 2003-12-31 Unitive International Limited Methods of forming electronic structures including conductive shunt layers and related structures
US7547623B2 (en) * 2002-06-25 2009-06-16 Unitive International Limited Methods of forming lead free solder bumps
US7531898B2 (en) * 2002-06-25 2009-05-12 Unitive International Limited Non-Circular via holes for bumping pads and related structures
US7495326B2 (en) 2002-10-22 2009-02-24 Unitive International Limited Stacked electronic structures including offset substrates
TWI225899B (en) * 2003-02-18 2005-01-01 Unitive Semiconductor Taiwan C Etching solution and method for manufacturing conductive bump using the etching solution to selectively remove barrier layer
US7049216B2 (en) * 2003-10-14 2006-05-23 Unitive International Limited Methods of providing solder structures for out plane connections
WO2005101499A2 (en) 2004-04-13 2005-10-27 Unitive International Limited Methods of forming solder bumps on exposed metal pads and related structures
US20060205170A1 (en) * 2005-03-09 2006-09-14 Rinne Glenn A Methods of forming self-healing metal-insulator-metal (MIM) structures and related devices
US7674701B2 (en) 2006-02-08 2010-03-09 Amkor Technology, Inc. Methods of forming metal layers using multi-layer lift-off patterns
US7932615B2 (en) * 2006-02-08 2011-04-26 Amkor Technology, Inc. Electronic devices including solder bumps on compliant dielectric layers
JP5119756B2 (ja) * 2006-06-30 2013-01-16 株式会社デンソー 配線基板
JP5855361B2 (ja) * 2011-05-31 2016-02-09 三菱電機株式会社 半導体装置
KR101774938B1 (ko) 2011-08-31 2017-09-06 삼성전자 주식회사 지지대를 갖는 반도체 패키지 및 그 형성 방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1053069A (enExample) * 1963-06-28
NL134170C (enExample) * 1963-12-17 1900-01-01
GB1104804A (en) * 1964-04-28 1968-02-28 Texas Instruments Inc Improvements relating to semiconductor devices
BE670213A (enExample) * 1964-09-30 1900-01-01
DE1614928A1 (de) * 1966-07-19 1970-12-23 Solitron Devices Verfahren zur Kontaktierung von Halbleiter-Bauelementen
US3436616A (en) * 1967-02-07 1969-04-01 Motorola Inc Ohmic contact consisting of a bilayer of gold and molybdenum over an alloyed region of aluminum-silicon
US3495324A (en) * 1967-11-13 1970-02-17 Sperry Rand Corp Ohmic contact for planar devices
US3518506A (en) * 1967-12-06 1970-06-30 Ibm Semiconductor device with contact metallurgy thereon,and method for making same
US3569796A (en) * 1968-05-10 1971-03-09 Solitron Devices Integrated circuit contact
US3480412A (en) * 1968-09-03 1969-11-25 Fairchild Camera Instr Co Method of fabrication of solder reflow interconnections for face down bonding of semiconductor devices

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2353770A1 (de) * 1972-11-10 1974-05-16 Philips Nv Halbleiteranordnung
GB2157079A (en) * 1984-03-30 1985-10-16 Mitsubishi Electric Corp Electrode arrangement for semiconductor devices
US4709469A (en) * 1984-03-30 1987-12-01 Mitsubishi Denki Kabushiki Kaisha Method of making a bipolar transistor with polycrystalline contacts
GB2168845A (en) * 1984-12-20 1986-06-25 Mitsubishi Electric Corp Electrode arrangement for semiconductor devices
US4803174A (en) * 1984-12-20 1989-02-07 Mitsubishi Denki Kabushiki Kaisha Bipolar transistor integrated circuit and method of manufacturing the same

Also Published As

Publication number Publication date
CH505465A (de) 1971-03-31
ES375119A1 (es) 1972-03-16
SE354542B (enExample) 1973-03-12
DE1965546C3 (de) 1980-05-22
JPS4813868B1 (enExample) 1973-05-01
FR2027664A1 (enExample) 1970-10-02
NL159822B (nl) 1979-03-15
AT318003B (de) 1974-09-25
NL6900054A (enExample) 1970-07-06
DE1965546B2 (de) 1979-08-30
ZA69880B (en) 1971-07-28
DE1965546A1 (de) 1970-08-27
BE743979A (enExample) 1970-06-30
US3942187A (en) 1976-03-02
FR2027664B1 (enExample) 1975-01-10
BR6915742D0 (pt) 1973-01-02

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
49R Reference inserted (sect. 9/1949)
PCNP Patent ceased through non-payment of renewal fee