GB1278442A - Semiconductor devices - Google Patents
Semiconductor devicesInfo
- Publication number
- GB1278442A GB1278442A GB30846/69D GB3084669D GB1278442A GB 1278442 A GB1278442 A GB 1278442A GB 30846/69 D GB30846/69 D GB 30846/69D GB 3084669 D GB3084669 D GB 3084669D GB 1278442 A GB1278442 A GB 1278442A
- Authority
- GB
- United Kingdom
- Prior art keywords
- emitter
- fingers
- layer
- common
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 238000002161 passivation Methods 0.000 abstract 4
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- 229910018487 Ni—Cr Inorganic materials 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 238000001465 metallisation Methods 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
- H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/121—BJTs having built-in components
- H10D84/125—BJTs having built-in components the built-in components being resistive elements, e.g. BJT having a built-in ballasting resistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
- H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL6808722.A NL164703C (nl) | 1968-06-21 | 1968-06-21 | Halfgeleiderinrichting, voorzien van een contact met ten minste twee gedeelten en een voor deze gedeelten gemeenschappelijk gedeelte, waarbij in elk der ver- bindingswegen tussen de gedeelten en het gemeenschappe- lijke gedeelte een serieweerstand is opgenomen. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1278442A true GB1278442A (en) | 1972-06-21 |
Family
ID=19803953
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB30846/69D Expired GB1278442A (en) | 1968-06-21 | 1969-06-18 | Semiconductor devices |
| GB58687/71A Expired GB1278443A (en) | 1968-06-21 | 1969-06-18 | Semiconductor devices |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB58687/71A Expired GB1278443A (en) | 1968-06-21 | 1969-06-18 | Semiconductor devices |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS5513587B1 (enrdf_load_stackoverflow) |
| AT (1) | AT320025B (enrdf_load_stackoverflow) |
| BR (1) | BR6909999D0 (enrdf_load_stackoverflow) |
| CH (1) | CH501998A (enrdf_load_stackoverflow) |
| FR (1) | FR2011431A1 (enrdf_load_stackoverflow) |
| GB (2) | GB1278442A (enrdf_load_stackoverflow) |
| NL (1) | NL164703C (enrdf_load_stackoverflow) |
| SE (1) | SE342113B (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2175441A (en) * | 1985-05-03 | 1986-11-26 | Texas Instruments Ltd | Power bipolar transistor |
| US9331642B2 (en) | 2014-06-27 | 2016-05-03 | Freescale Semiconductor, Inc. | Monolithic transistor circuits with tapered feedback resistors, RF amplifier devices, and methods of manufacture thereof |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7002117A (enrdf_load_stackoverflow) * | 1970-02-14 | 1971-08-17 | ||
| JPS5818964A (ja) * | 1981-07-28 | 1983-02-03 | Fujitsu Ltd | 半導体装置 |
| DE3329241A1 (de) * | 1983-08-12 | 1985-02-21 | Siemens AG, 1000 Berlin und 8000 München | Leistungstransistor |
| US4617471A (en) * | 1983-12-27 | 1986-10-14 | Kabushiki Kaisha Toshiba | Image sensing device |
| NL8403111A (nl) * | 1984-10-12 | 1986-05-01 | Philips Nv | Werkwijze ter vervaardiging van een bipolaire transistor met emitterserieweerstanden, en transistor vervaardigd volgens de werkwijze. |
| US5298785A (en) * | 1987-05-15 | 1994-03-29 | Fuji Electric Co., Ltd. | Semiconductor device |
| FR2615326B1 (fr) * | 1987-05-15 | 1990-08-31 | Fuji Electric Co Ltd | Dispositif a semi-conducteurs du type multi-emetteur |
| JPH0320953U (enrdf_load_stackoverflow) * | 1989-07-11 | 1991-02-28 | ||
| JPH07109831B2 (ja) * | 1990-01-25 | 1995-11-22 | 株式会社東芝 | 半導体装置 |
| JP4949650B2 (ja) * | 2005-07-13 | 2012-06-13 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL296170A (enrdf_load_stackoverflow) * | 1962-10-04 | |||
| US3358197A (en) * | 1963-05-22 | 1967-12-12 | Itt | Semiconductor device |
| FR1475075A (fr) * | 1965-03-08 | 1967-03-31 | Int Standard Electric Corp | Dispositif semi-conducteur à haute puissance |
| US3506886A (en) * | 1965-03-08 | 1970-04-14 | Itt | High power transistor assembly |
-
1968
- 1968-06-21 NL NL6808722.A patent/NL164703C/xx not_active IP Right Cessation
-
1969
- 1969-06-18 CH CH930369A patent/CH501998A/de not_active IP Right Cessation
- 1969-06-18 GB GB30846/69D patent/GB1278442A/en not_active Expired
- 1969-06-18 AT AT576469A patent/AT320025B/de not_active IP Right Cessation
- 1969-06-18 GB GB58687/71A patent/GB1278443A/en not_active Expired
- 1969-06-18 SE SE8709/69A patent/SE342113B/xx unknown
- 1969-06-20 BR BR209999/69A patent/BR6909999D0/pt unknown
- 1969-06-20 FR FR6920810A patent/FR2011431A1/fr active Pending
-
1975
- 1975-06-03 JP JP6697775A patent/JPS5513587B1/ja active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2175441A (en) * | 1985-05-03 | 1986-11-26 | Texas Instruments Ltd | Power bipolar transistor |
| GB2175441B (en) * | 1985-05-03 | 1989-05-10 | Texas Instruments Ltd | Power bipolar transistor |
| US9331642B2 (en) | 2014-06-27 | 2016-05-03 | Freescale Semiconductor, Inc. | Monolithic transistor circuits with tapered feedback resistors, RF amplifier devices, and methods of manufacture thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| SE342113B (enrdf_load_stackoverflow) | 1972-01-24 |
| NL164703B (nl) | 1980-08-15 |
| AT320025B (de) | 1975-01-27 |
| FR2011431A1 (enrdf_load_stackoverflow) | 1970-02-27 |
| CH501998A (de) | 1971-01-15 |
| BR6909999D0 (pt) | 1973-01-02 |
| JPS5513587B1 (enrdf_load_stackoverflow) | 1980-04-10 |
| DE1802899A1 (de) | 1970-02-26 |
| GB1278443A (en) | 1972-06-21 |
| DE1802899B2 (de) | 1975-04-24 |
| NL164703C (nl) | 1981-01-15 |
| NL6808722A (enrdf_load_stackoverflow) | 1969-12-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PE20 | Patent expired after termination of 20 years |