GB1276343A - Improvements in and relating to semiconductor devices - Google Patents
Improvements in and relating to semiconductor devicesInfo
- Publication number
- GB1276343A GB1276343A GB43162/69A GB4316269A GB1276343A GB 1276343 A GB1276343 A GB 1276343A GB 43162/69 A GB43162/69 A GB 43162/69A GB 4316269 A GB4316269 A GB 4316269A GB 1276343 A GB1276343 A GB 1276343A
- Authority
- GB
- United Kingdom
- Prior art keywords
- compound
- crystals
- compounds
- temperature
- body surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 150000001875 compounds Chemical class 0.000 abstract 15
- 239000013078 crystal Substances 0.000 abstract 7
- 239000000203 mixture Substances 0.000 abstract 4
- 239000010410 layer Substances 0.000 abstract 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- 239000003708 ampul Substances 0.000 abstract 1
- 229910052793 cadmium Inorganic materials 0.000 abstract 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 238000007713 directional crystallization Methods 0.000 abstract 1
- 230000005496 eutectics Effects 0.000 abstract 1
- 239000000155 melt Substances 0.000 abstract 1
- 150000003346 selenoethers Chemical class 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
- 150000004772 tellurides Chemical class 0.000 abstract 1
- 150000003568 thioethers Chemical class 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B21/00—Unidirectional solidification of eutectic materials
- C30B21/02—Unidirectional solidification of eutectic materials by normal casting or gradient freezing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Electrodes Of Semiconductors (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL6812544A NL6812544A (enExample) | 1968-09-04 | 1968-09-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1276343A true GB1276343A (en) | 1972-06-01 |
Family
ID=19804544
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB43162/69A Expired GB1276343A (en) | 1968-09-04 | 1969-08-29 | Improvements in and relating to semiconductor devices |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3641406A (enExample) |
| JP (1) | JPS492864B1 (enExample) |
| BE (1) | BE738388A (enExample) |
| CH (1) | CH531253A (enExample) |
| DE (1) | DE1942820A1 (enExample) |
| FR (1) | FR2017385B1 (enExample) |
| GB (1) | GB1276343A (enExample) |
| NL (1) | NL6812544A (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4101341A (en) * | 1977-05-04 | 1978-07-18 | Battelle Development Corporation | CdSe-SnSe photovoltaic cell |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3124452A (en) * | 1964-03-10 | figure | ||
| FR1193194A (fr) * | 1958-03-12 | 1959-10-30 | Perfectionnements aux procédés de fabrication par diffusion des transistors et des redresseurs à jonctions | |
| US3171068A (en) * | 1960-10-19 | 1965-02-23 | Merck & Co Inc | Semiconductor diodes |
| FR1335282A (fr) * | 1961-08-30 | 1963-08-16 | Gen Electric | Composés semi-conducteurs, procédés de préparation et de dépôt de ceux-ci, et dispositifs semi-conducteurs ainsi obtenus |
| US3129343A (en) * | 1961-12-13 | 1964-04-14 | Bell Telephone Labor Inc | Logarithmic function generator |
| US3351502A (en) * | 1964-10-19 | 1967-11-07 | Massachusetts Inst Technology | Method of producing interface-alloy epitaxial heterojunctions |
| GB1112411A (en) * | 1965-01-21 | 1968-05-08 | Mullard Ltd | Improvements in and relating to semiconductor devices |
| US3439240A (en) * | 1966-07-29 | 1969-04-15 | Int Rectifier Corp | Selenium rectifier |
| FR1541127A (fr) * | 1967-08-25 | 1968-10-04 | B A R A Bureau D Analyse Et De | Procédé et appareillage pour la réalisation de monocristaux semi-conducteurs, et de jonctions p-n |
| US3578507A (en) * | 1969-04-28 | 1971-05-11 | Zenith Radio Corp | Method of producing non-opaque p-type wide band gap semiconductor materials |
-
1968
- 1968-09-04 NL NL6812544A patent/NL6812544A/xx unknown
-
1969
- 1969-08-22 DE DE19691942820 patent/DE1942820A1/de not_active Ceased
- 1969-08-29 GB GB43162/69A patent/GB1276343A/en not_active Expired
- 1969-09-01 CH CH1323969A patent/CH531253A/de not_active IP Right Cessation
- 1969-09-03 US US854896A patent/US3641406A/en not_active Expired - Lifetime
- 1969-09-03 BE BE738388D patent/BE738388A/xx unknown
- 1969-09-04 FR FR6930206A patent/FR2017385B1/fr not_active Expired
- 1969-09-04 JP JP44069925A patent/JPS492864B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR2017385A1 (enExample) | 1970-05-22 |
| NL6812544A (enExample) | 1970-03-06 |
| US3641406A (en) | 1972-02-08 |
| CH531253A (de) | 1972-11-30 |
| FR2017385B1 (enExample) | 1976-03-19 |
| DE1942820A1 (de) | 1970-03-12 |
| JPS492864B1 (enExample) | 1974-01-23 |
| BE738388A (enExample) | 1970-03-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3047438A (en) | Epitaxial semiconductor deposition and apparatus | |
| GB1256108A (en) | Fabricating semiconductor devices | |
| US3093517A (en) | Intermetallic semiconductor body formation | |
| JPS5780739A (en) | Semiconductor integrated circuit device and manufacture thereof | |
| US2814004A (en) | Electrically semiconductive object and method of producing same | |
| GB1276343A (en) | Improvements in and relating to semiconductor devices | |
| US3622399A (en) | Method for preparing single crystal pseudobinary alloys | |
| GB1525796A (en) | Method of manufacturing liquid crystal display devices | |
| GB1481550A (en) | Pyroelectric materials and devices | |
| US4662980A (en) | Process for preparing crystals of Hg1-x Cdx Te | |
| Klepp et al. | Mixed valent ternary iron chalcogenides: AFe2X3 (A= Rb, Cs; X= Se, Te) | |
| GB1359050A (en) | Sealing glass compositions | |
| GB1501483A (en) | Semiconductor device | |
| GB913791A (en) | Arsenic sulphide glasses | |
| GB1263504A (en) | Process for making indium antimonide thin film semiconductor elements | |
| GB1129789A (en) | Process for producing cadmium telluride crystal | |
| EP0316021A3 (en) | Doped and undoped single crystal multilayered structures | |
| JPS52117580A (en) | Manufacture for mis type integrating circuit | |
| KR920022452A (ko) | 단결정 실리콘 기판상에 화합물 반도체층이 형성된 기판의 제조 방법 | |
| JPS5289070A (en) | Semiconductor device | |
| JPS52156581A (en) | Semiconductor device | |
| GB1299610A (en) | Improvements in and relating to epitaxial deposition | |
| JPS5890740A (ja) | 半導体装置 | |
| GB970980A (en) | Improvements in or relating to methods of preparing crystalline compounds | |
| GB1367510A (en) | Method of manufacturing single crystals of semiconductor compounds |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |