GB1269275A - Semiconductor pressure-electric transducer - Google Patents
Semiconductor pressure-electric transducerInfo
- Publication number
- GB1269275A GB1269275A GB3379069A GB3379069A GB1269275A GB 1269275 A GB1269275 A GB 1269275A GB 3379069 A GB3379069 A GB 3379069A GB 3379069 A GB3379069 A GB 3379069A GB 1269275 A GB1269275 A GB 1269275A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semi
- conductor
- pressure
- doped
- rectifying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 2
- 229910052737 gold Inorganic materials 0.000 abstract 2
- 239000010931 gold Substances 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- 229910005540 GaP Inorganic materials 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 abstract 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 abstract 1
- 229910017052 cobalt Inorganic materials 0.000 abstract 1
- 239000010941 cobalt Substances 0.000 abstract 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052742 iron Inorganic materials 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000004332 silver Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
1,269,275. Pressure-sensitive semi-conductor devices. MATSUSHITA ELECTRIC INDUSTRIAL CO. Ltd. 4 July, 1969 [19 July, 1968], No. 33790/69. Heading HlK. Pressure is applied to a rectifying contact of a semi-conductor body doped with a deep level impurity through a flat semi-conductor plate of high resistivity and of closely comparable hardness to that of the semi-conductor body. The body may be of monocrystalline silicon doped with copper, gold, iron, cobalt, or nickel. The lapped and polished pressure-transmitting plate may be of mono- or poly-crystalline silicon having high resistivity as a result of low doping or of doping with silver or gold. Alternative semi-conductor bodies may be made of germanium, gallium arsenide, gallium phosphide, indium arsenide, or cadmium selenide (each doped with a deep level impurity). Though only one contact need be rectifying for D.C. operation, two rectifying contacts are necessary for A.C. use.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5141568 | 1968-07-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1269275A true GB1269275A (en) | 1972-04-06 |
Family
ID=12886283
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3379069A Expired GB1269275A (en) | 1968-07-19 | 1969-07-04 | Semiconductor pressure-electric transducer |
Country Status (4)
| Country | Link |
|---|---|
| DE (1) | DE1934800B2 (en) |
| FR (1) | FR2013308A1 (en) |
| GB (1) | GB1269275A (en) |
| NL (1) | NL153028B (en) |
-
1969
- 1969-07-04 GB GB3379069A patent/GB1269275A/en not_active Expired
- 1969-07-09 DE DE19691934800 patent/DE1934800B2/en not_active Withdrawn
- 1969-07-18 NL NL6911065A patent/NL153028B/en unknown
- 1969-07-18 FR FR6924682A patent/FR2013308A1/fr not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| DE1934800B2 (en) | 1971-07-22 |
| NL6911065A (en) | 1970-01-21 |
| DE1934800A1 (en) | 1970-02-05 |
| NL153028B (en) | 1977-04-15 |
| FR2013308A1 (en) | 1970-03-27 |
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