GB1268175A - Integrated circuit - Google Patents

Integrated circuit

Info

Publication number
GB1268175A
GB1268175A GB304770A GB304770A GB1268175A GB 1268175 A GB1268175 A GB 1268175A GB 304770 A GB304770 A GB 304770A GB 304770 A GB304770 A GB 304770A GB 1268175 A GB1268175 A GB 1268175A
Authority
GB
United Kingdom
Prior art keywords
circuits
switch
paths
basic
gates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB304770A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of GB1268175A publication Critical patent/GB1268175A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/22—Connection or disconnection of sub-entities or redundant parts of a device in response to a measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13062—Junction field-effect transistor [JFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Automation & Control Theory (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Tests Of Electronic Circuits (AREA)

Abstract

1,268,175. Semi-conductor devices. HITACHI Ltd. 21 Jan., 1970 [27 Jan., 1969], No. 3047/70. Heading HlK. An integrated circuit includes a plurality of basic electronic circuits, e.g. AND gates, OR gates, multivibrators, mutually interconnected in a normal operational relationship by signal transmitting paths, and at least one electronic switch having a control electrode, the switch being provided in one of the paths. The switch may be a MISFET 11 comprising source and drain regions (20, 21), Fig. lb (not shown), with source and drain electrodes 12, 13 connected to terminal pads C, C<SP>1</SP>, and a gate electrode 14, forming the control electrode, connected to a terminal pad 17 by a conducting region 15 of the substrate (10). The MISFET 11 is connected in the signal paths 16 between the basic circuits A, B, and such a switch may be provided in some or each of paths 16. The gate electrodes of the switches are connected together. In operation, the gate electrodes are energized, and the switches checked for continuity via terminal pads CC<SP>1</SP>, DD<SP>1</SP> &c. The gates are then de-energized isolating the basic circuits A, B &c., which are then checked for their correct individual operation. For normal working the switches are closed by energizing the gate electrodes, enabling the integrated circuit to function as a whole. The device is said to enable complex integrated circuits to be checked in basic circuit form enabling faulty circuits to be located although they may be mounted in series, parallel, multistage, or contain feedback loops.
GB304770A 1969-01-27 1970-01-21 Integrated circuit Expired GB1268175A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP525769 1969-01-27

Publications (1)

Publication Number Publication Date
GB1268175A true GB1268175A (en) 1972-03-22

Family

ID=11606155

Family Applications (1)

Application Number Title Priority Date Filing Date
GB304770A Expired GB1268175A (en) 1969-01-27 1970-01-21 Integrated circuit

Country Status (2)

Country Link
FR (1) FR2029458A1 (en)
GB (1) GB1268175A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0739034A2 (en) * 1995-04-20 1996-10-23 Mitsubishi Denki Kabushiki Kaisha Integrated circuit device and fabricating method thereof
EP1048957A2 (en) * 1999-04-30 2000-11-02 Nec Corporation Integrated circuit device having process parameter measuring circuit
WO2009020787A1 (en) * 2007-08-03 2009-02-12 Dsm Solutions, Inc. Programmable logic devices comprising junction field effect transistors, and methods of using the same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0739034A2 (en) * 1995-04-20 1996-10-23 Mitsubishi Denki Kabushiki Kaisha Integrated circuit device and fabricating method thereof
EP0739034A3 (en) * 1995-04-20 1999-07-14 Mitsubishi Denki Kabushiki Kaisha Integrated circuit device and fabricating method thereof
EP1048957A2 (en) * 1999-04-30 2000-11-02 Nec Corporation Integrated circuit device having process parameter measuring circuit
EP1048957A3 (en) * 1999-04-30 2003-11-12 NEC Electronics Corporation Integrated circuit device having process parameter measuring circuit
WO2009020787A1 (en) * 2007-08-03 2009-02-12 Dsm Solutions, Inc. Programmable logic devices comprising junction field effect transistors, and methods of using the same
US7629812B2 (en) 2007-08-03 2009-12-08 Dsm Solutions, Inc. Switching circuits and methods for programmable logic devices

Also Published As

Publication number Publication date
FR2029458A1 (en) 1970-10-23
DE2003060A1 (en) 1970-07-30
DE2003060B2 (en) 1972-05-04

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