GB1228819A - - Google Patents
Info
- Publication number
- GB1228819A GB1228819A GB1228819DA GB1228819A GB 1228819 A GB1228819 A GB 1228819A GB 1228819D A GB1228819D A GB 1228819DA GB 1228819 A GB1228819 A GB 1228819A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- silicon dioxide
- metal
- silicon
- oct
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010410 layer Substances 0.000 abstract 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052751 metal Inorganic materials 0.000 abstract 4
- 239000002184 metal Substances 0.000 abstract 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract 1
- 238000009825 accumulation Methods 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 239000011651 chromium Substances 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 238000004347 surface barrier Methods 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
- 238000001771 vacuum deposition Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
- H10D1/64—Variable-capacitance diodes, e.g. varactors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US67482167A | 1967-10-12 | 1967-10-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1228819A true GB1228819A (en, 2012) | 1971-04-21 |
Family
ID=24708010
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1228819D Expired GB1228819A (en, 2012) | 1967-10-12 | 1968-10-09 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US3579278A (en, 2012) |
| FR (1) | FR1587452A (en, 2012) |
| GB (1) | GB1228819A (en, 2012) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3746945A (en) * | 1971-10-27 | 1973-07-17 | Motorola Inc | Schottky diode clipper device |
| JPS5516461B2 (en, 2012) * | 1974-03-25 | 1980-05-02 | ||
| JPS51121276A (en) * | 1975-04-17 | 1976-10-23 | Matsushita Electric Ind Co Ltd | Variable capacitance element |
| US4110488A (en) * | 1976-04-09 | 1978-08-29 | Rca Corporation | Method for making schottky barrier diodes |
| US4349394A (en) * | 1979-12-06 | 1982-09-14 | Siemens Corporation | Method of making a zener diode utilizing gas-phase epitaxial deposition |
| US5192871A (en) * | 1991-10-15 | 1993-03-09 | Motorola, Inc. | Voltage variable capacitor having amorphous dielectric film |
| DE19526739C3 (de) * | 1995-07-21 | 2001-03-29 | Gen Semiconductor Ireland Macr | Halbleiterbauelement |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2680220A (en) * | 1950-06-09 | 1954-06-01 | Int Standard Electric Corp | Crystal diode and triode |
| BE506280A (en, 2012) * | 1950-10-10 | |||
| US2914715A (en) * | 1956-07-02 | 1959-11-24 | Bell Telephone Labor Inc | Semiconductor diode |
| NL113570C (en, 2012) * | 1959-11-25 | |||
| DE1464703B2 (de) * | 1963-08-13 | 1973-04-19 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Kapazitaetsdiode |
| US3450957A (en) * | 1967-01-10 | 1969-06-17 | Sprague Electric Co | Distributed barrier metal-semiconductor junction device |
-
1967
- 1967-10-12 US US674821A patent/US3579278A/en not_active Expired - Lifetime
-
1968
- 1968-10-09 GB GB1228819D patent/GB1228819A/en not_active Expired
- 1968-10-10 FR FR1587452D patent/FR1587452A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR1587452A (en, 2012) | 1970-03-20 |
| US3579278A (en) | 1971-05-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |