GB1224335A - N-channel field effect transistor - Google Patents
N-channel field effect transistorInfo
- Publication number
- GB1224335A GB1224335A GB44418/68A GB4441868A GB1224335A GB 1224335 A GB1224335 A GB 1224335A GB 44418/68 A GB44418/68 A GB 44418/68A GB 4441868 A GB4441868 A GB 4441868A GB 1224335 A GB1224335 A GB 1224335A
- Authority
- GB
- United Kingdom
- Prior art keywords
- type
- source
- drain
- region
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 238000002955 isolation Methods 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 abstract 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 239000000395 magnesium oxide Substances 0.000 abstract 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 abstract 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 229910052594 sapphire Inorganic materials 0.000 abstract 1
- 239000010980 sapphire Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052596 spinel Inorganic materials 0.000 abstract 1
- 239000011029 spinel Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- A—HUMAN NECESSITIES
- A45—HAND OR TRAVELLING ARTICLES
- A45C—PURSES; LUGGAGE; HAND CARRIED BAGS
- A45C15/00—Purses, bags, luggage or other receptacles covered by groups A45C1/00 - A45C11/00, combined with other objects or articles
- A45C15/04—Purses, bags, luggage or other receptacles covered by groups A45C1/00 - A45C11/00, combined with other objects or articles with mirrors
-
- A—HUMAN NECESSITIES
- A45—HAND OR TRAVELLING ARTICLES
- A45C—PURSES; LUGGAGE; HAND CARRIED BAGS
- A45C3/00—Flexible luggage; Handbags
- A45C3/10—Beach-bags; Watertight beach-bags
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6708—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
- H10D30/6711—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect by using electrodes contacting the supplementary regions or layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US68864867A | 1967-11-28 | 1967-11-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1224335A true GB1224335A (en) | 1971-03-10 |
Family
ID=24765208
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB44418/68A Expired GB1224335A (en) | 1967-11-28 | 1968-09-18 | N-channel field effect transistor |
| GB1226080D Expired GB1226080A (enrdf_load_stackoverflow) | 1967-11-28 | 1968-09-18 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1226080D Expired GB1226080A (enrdf_load_stackoverflow) | 1967-11-28 | 1968-09-18 |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE1811492A1 (enrdf_load_stackoverflow) |
| GB (2) | GB1224335A (enrdf_load_stackoverflow) |
| NL (1) | NL6815161A (enrdf_load_stackoverflow) |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2637479A1 (de) * | 1975-09-04 | 1977-03-10 | Westinghouse Electric Corp | Mos-feldeffekt-transistor |
| DE2734694A1 (de) * | 1976-08-05 | 1978-02-09 | Ibm | Isolierschicht-feldeffekttransistor mit kleiner kanallaenge und verfahren zu seiner herstellung |
| DE3142448A1 (de) * | 1980-12-12 | 1982-06-24 | Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa | Mos-halbleitervorrichtung und verfahren zu ihrer herstellung |
| GB2154366A (en) * | 1984-01-06 | 1985-09-04 | Texas Instruments Ltd | Field effect transistors |
| US4933730A (en) * | 1986-05-23 | 1990-06-12 | Fujitsu Limited | Semiconductor device having a high breakdown voltage characteristic |
| US4959699A (en) * | 1978-10-13 | 1990-09-25 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
| US5130767A (en) * | 1979-05-14 | 1992-07-14 | International Rectifier Corporation | Plural polygon source pattern for mosfet |
| US5298764A (en) * | 1991-03-08 | 1994-03-29 | Hitachi, Ltd. | Semiconductor memory device having a field effect transistor with a channel formed from a polycrystalline silicon film |
| US5338961A (en) * | 1978-10-13 | 1994-08-16 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
| US5592026A (en) * | 1993-12-24 | 1997-01-07 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | Integrated structure pad assembly for lead bonding |
| US5631476A (en) * | 1994-08-02 | 1997-05-20 | Sgs-Thomson Microelectronics S.R.L. | MOS-technology power device chip and package assembly |
| US5798287A (en) * | 1993-12-24 | 1998-08-25 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | Method for forming a power MOS device chip |
| US5821616A (en) * | 1993-12-24 | 1998-10-13 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | Power MOS device chip and package assembly |
| US5869371A (en) * | 1995-06-07 | 1999-02-09 | Stmicroelectronics, Inc. | Structure and process for reducing the on-resistance of mos-gated power devices |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5024084A (enrdf_load_stackoverflow) * | 1973-07-05 | 1975-03-14 | ||
| DE3028718C2 (de) * | 1979-07-31 | 1982-08-19 | Sharp K.K., Osaka | Dünnfilmtransistor in Verbindung mit einer Anzeigevorrichtung |
| EP0110320B1 (en) * | 1982-11-27 | 1987-03-11 | Nissan Motor Co., Ltd. | A mos transistor |
| JPS5998557A (ja) * | 1982-11-27 | 1984-06-06 | Nissan Motor Co Ltd | Ｍｏｓトランジスタ |
-
1968
- 1968-09-18 GB GB44418/68A patent/GB1224335A/en not_active Expired
- 1968-09-18 GB GB1226080D patent/GB1226080A/en not_active Expired
- 1968-10-23 NL NL6815161A patent/NL6815161A/xx unknown
- 1968-11-28 DE DE19681811492 patent/DE1811492A1/de active Pending
Cited By (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2637479A1 (de) * | 1975-09-04 | 1977-03-10 | Westinghouse Electric Corp | Mos-feldeffekt-transistor |
| DE2734694A1 (de) * | 1976-08-05 | 1978-02-09 | Ibm | Isolierschicht-feldeffekttransistor mit kleiner kanallaenge und verfahren zu seiner herstellung |
| US5598018A (en) * | 1978-10-13 | 1997-01-28 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
| US4959699A (en) * | 1978-10-13 | 1990-09-25 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
| US5191396A (en) * | 1978-10-13 | 1993-03-02 | International Rectifier Corp. | High power mosfet with low on-resistance and high breakdown voltage |
| US5742087A (en) * | 1978-10-13 | 1998-04-21 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
| US5338961A (en) * | 1978-10-13 | 1994-08-16 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
| US5130767A (en) * | 1979-05-14 | 1992-07-14 | International Rectifier Corporation | Plural polygon source pattern for mosfet |
| DE3142448A1 (de) * | 1980-12-12 | 1982-06-24 | Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa | Mos-halbleitervorrichtung und verfahren zu ihrer herstellung |
| US4484209A (en) * | 1980-12-12 | 1984-11-20 | Tokyo Shibaura Denki Kabushiki Kaisha | SOS Mosfet with thinned channel contact region |
| GB2154366A (en) * | 1984-01-06 | 1985-09-04 | Texas Instruments Ltd | Field effect transistors |
| US4933730A (en) * | 1986-05-23 | 1990-06-12 | Fujitsu Limited | Semiconductor device having a high breakdown voltage characteristic |
| US5298764A (en) * | 1991-03-08 | 1994-03-29 | Hitachi, Ltd. | Semiconductor memory device having a field effect transistor with a channel formed from a polycrystalline silicon film |
| US5592026A (en) * | 1993-12-24 | 1997-01-07 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | Integrated structure pad assembly for lead bonding |
| US5798287A (en) * | 1993-12-24 | 1998-08-25 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | Method for forming a power MOS device chip |
| US5821616A (en) * | 1993-12-24 | 1998-10-13 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | Power MOS device chip and package assembly |
| US5888889A (en) * | 1993-12-24 | 1999-03-30 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | Integrated structure pad assembly for lead bonding |
| US5631476A (en) * | 1994-08-02 | 1997-05-20 | Sgs-Thomson Microelectronics S.R.L. | MOS-technology power device chip and package assembly |
| US5851855A (en) * | 1994-08-02 | 1998-12-22 | Sgs-Thomson Microelectronics S.R.L. | Process for manufacturing a MOS-technology power device chip and package assembly |
| US5869371A (en) * | 1995-06-07 | 1999-02-09 | Stmicroelectronics, Inc. | Structure and process for reducing the on-resistance of mos-gated power devices |
| US6046473A (en) * | 1995-06-07 | 2000-04-04 | Stmicroelectronics, Inc. | Structure and process for reducing the on-resistance of MOS-gated power devices |
Also Published As
| Publication number | Publication date |
|---|---|
| GB1226080A (enrdf_load_stackoverflow) | 1971-03-24 |
| NL6815161A (enrdf_load_stackoverflow) | 1969-05-30 |
| DE1811492A1 (de) | 1969-08-07 |
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