NL6815161A - - Google Patents
Info
- Publication number
- NL6815161A NL6815161A NL6815161A NL6815161A NL6815161A NL 6815161 A NL6815161 A NL 6815161A NL 6815161 A NL6815161 A NL 6815161A NL 6815161 A NL6815161 A NL 6815161A NL 6815161 A NL6815161 A NL 6815161A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- A—HUMAN NECESSITIES
- A45—HAND OR TRAVELLING ARTICLES
- A45C—PURSES; LUGGAGE; HAND CARRIED BAGS
- A45C15/00—Purses, bags, luggage or other receptacles covered by groups A45C1/00 - A45C11/00, combined with other objects or articles
- A45C15/04—Purses, bags, luggage or other receptacles covered by groups A45C1/00 - A45C11/00, combined with other objects or articles with mirrors
-
- A—HUMAN NECESSITIES
- A45—HAND OR TRAVELLING ARTICLES
- A45C—PURSES; LUGGAGE; HAND CARRIED BAGS
- A45C3/00—Flexible luggage; Handbags
- A45C3/10—Beach-bags; Watertight beach-bags
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6708—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
- H10D30/6711—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect by using electrodes contacting the supplementary regions or layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US68864867A | 1967-11-28 | 1967-11-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
NL6815161A true NL6815161A (enrdf_load_stackoverflow) | 1969-05-30 |
Family
ID=24765208
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL6815161A NL6815161A (enrdf_load_stackoverflow) | 1967-11-28 | 1968-10-23 |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE1811492A1 (enrdf_load_stackoverflow) |
GB (2) | GB1226080A (enrdf_load_stackoverflow) |
NL (1) | NL6815161A (enrdf_load_stackoverflow) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5024084A (enrdf_load_stackoverflow) * | 1973-07-05 | 1975-03-14 | ||
US4053916A (en) * | 1975-09-04 | 1977-10-11 | Westinghouse Electric Corporation | Silicon on sapphire MOS transistor |
US4078947A (en) * | 1976-08-05 | 1978-03-14 | International Business Machines Corporation | Method for forming a narrow channel length MOS field effect transistor |
JPS5553462A (en) * | 1978-10-13 | 1980-04-18 | Int Rectifier Corp | Mosfet element |
US5191396B1 (en) * | 1978-10-13 | 1995-12-26 | Int Rectifier Corp | High power mosfet with low on-resistance and high breakdown voltage |
US5130767C1 (en) * | 1979-05-14 | 2001-08-14 | Int Rectifier Corp | Plural polygon source pattern for mosfet |
DE3028718C2 (de) * | 1979-07-31 | 1982-08-19 | Sharp K.K., Osaka | Dünnfilmtransistor in Verbindung mit einer Anzeigevorrichtung |
JPS5799777A (en) * | 1980-12-12 | 1982-06-21 | Toshiba Corp | Metal oxide semiconductor type semiconductor device |
EP0110320B1 (en) * | 1982-11-27 | 1987-03-11 | Nissan Motor Co., Ltd. | A mos transistor |
JPS5998557A (ja) * | 1982-11-27 | 1984-06-06 | Nissan Motor Co Ltd | Mosトランジスタ |
GB8400336D0 (en) * | 1984-01-06 | 1984-02-08 | Texas Instruments Ltd | Field effect transistors |
JPS62274767A (ja) * | 1986-05-23 | 1987-11-28 | Fujitsu Ltd | 高耐圧半導体装置及びその製造方法 |
JP3231345B2 (ja) * | 1991-03-08 | 2001-11-19 | 株式会社日立製作所 | 半導体記憶装置及びその製造方法 |
DE69321965T2 (de) * | 1993-12-24 | 1999-06-02 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania | MOS-Leistungs-Chip-Typ und Packungszusammenbau |
DE69321966T2 (de) * | 1993-12-24 | 1999-06-02 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania | Leistungs-Halbleiterbauelement |
US5798287A (en) * | 1993-12-24 | 1998-08-25 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | Method for forming a power MOS device chip |
EP0697728B1 (en) * | 1994-08-02 | 1999-04-21 | STMicroelectronics S.r.l. | MOS-technology power device chip and package assembly |
US5869371A (en) * | 1995-06-07 | 1999-02-09 | Stmicroelectronics, Inc. | Structure and process for reducing the on-resistance of mos-gated power devices |
-
1968
- 1968-09-18 GB GB1226080D patent/GB1226080A/en not_active Expired
- 1968-09-18 GB GB44418/68A patent/GB1224335A/en not_active Expired
- 1968-10-23 NL NL6815161A patent/NL6815161A/xx unknown
- 1968-11-28 DE DE19681811492 patent/DE1811492A1/de active Pending
Also Published As
Publication number | Publication date |
---|---|
DE1811492A1 (de) | 1969-08-07 |
GB1224335A (en) | 1971-03-10 |
GB1226080A (enrdf_load_stackoverflow) | 1971-03-24 |