GB1211657A - Metal etching process for semiconductor devices - Google Patents
Metal etching process for semiconductor devicesInfo
- Publication number
- GB1211657A GB1211657A GB02470/69A GB1247069A GB1211657A GB 1211657 A GB1211657 A GB 1211657A GB 02470/69 A GB02470/69 A GB 02470/69A GB 1247069 A GB1247069 A GB 1247069A GB 1211657 A GB1211657 A GB 1211657A
- Authority
- GB
- United Kingdom
- Prior art keywords
- etching
- layer
- photo
- resist
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005530 etching Methods 0.000 title abstract 7
- 229910052751 metal Inorganic materials 0.000 title abstract 6
- 239000002184 metal Substances 0.000 title abstract 6
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 239000004411 aluminium Substances 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 230000000873 masking effect Effects 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- 229910017855 NH 4 F Inorganic materials 0.000 abstract 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000001464 adherent effect Effects 0.000 abstract 1
- 239000005388 borosilicate glass Substances 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 229910000077 silane Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Weting (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US71682868A | 1968-03-28 | 1968-03-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1211657A true GB1211657A (en) | 1970-11-11 |
Family
ID=24879613
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB02470/69A Expired GB1211657A (en) | 1968-03-28 | 1969-03-10 | Metal etching process for semiconductor devices |
Country Status (5)
| Country | Link |
|---|---|
| DE (1) | DE1916036A1 (de) |
| ES (1) | ES365276A1 (de) |
| FR (1) | FR1600285A (de) |
| GB (1) | GB1211657A (de) |
| NL (1) | NL6904744A (de) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2243682A1 (de) * | 1971-09-10 | 1973-03-15 | Western Electric Co | Verfahren zur metallisierung von bauteilen |
| CN113502407A (zh) * | 2021-07-13 | 2021-10-15 | 湖南金天铝业高科技股份有限公司 | 碳化硅颗粒的预处理方法及铝基复合材料的制备方法 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3920471A (en) * | 1974-10-10 | 1975-11-18 | Teletype Corp | Prevention of aluminum etching during silox photoshaping |
| DE102009021272A1 (de) * | 2009-05-14 | 2010-11-18 | Schott Solar Ag | Verfahren zur Herstellung eines photovoltaischen Moduls |
| CN115360496B (zh) * | 2022-08-30 | 2023-09-29 | 合肥工业大学 | 基于金属辅助化学刻蚀的太赫兹高度差腔体器件的制备方法 |
-
1968
- 1968-12-31 FR FR1600285D patent/FR1600285A/fr not_active Expired
-
1969
- 1969-03-10 GB GB02470/69A patent/GB1211657A/en not_active Expired
- 1969-03-26 ES ES365276A patent/ES365276A1/es not_active Expired
- 1969-03-27 NL NL6904744A patent/NL6904744A/xx unknown
- 1969-03-28 DE DE19691916036 patent/DE1916036A1/de active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2243682A1 (de) * | 1971-09-10 | 1973-03-15 | Western Electric Co | Verfahren zur metallisierung von bauteilen |
| CN113502407A (zh) * | 2021-07-13 | 2021-10-15 | 湖南金天铝业高科技股份有限公司 | 碳化硅颗粒的预处理方法及铝基复合材料的制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1916036A1 (de) | 1969-10-02 |
| NL6904744A (de) | 1969-09-30 |
| ES365276A1 (es) | 1971-02-16 |
| FR1600285A (de) | 1970-07-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1208574A (en) | Methods of manufacturing semiconductor devices | |
| GB1219986A (en) | Improvements in or relating to the production of semiconductor bodies | |
| GB972512A (en) | Methods of making semiconductor devices | |
| GB1381602A (en) | Integrated circuit structure and method for making integrated circuit structure | |
| GB1222898A (en) | Improvements in and relating to methods of manufacturing semiconductor devices | |
| US3673016A (en) | Method of dividing a semiconductor wafer | |
| GB1206308A (en) | Method of making semiconductor wafer | |
| GB1520925A (en) | Semiconductor device manufacture | |
| GB988367A (en) | Semiconductor devices and method of fabricating same | |
| GB1095413A (de) | ||
| GB1515639A (en) | Integrated circuits | |
| GB1449559A (en) | Production of a semiconductor device | |
| GB1211657A (en) | Metal etching process for semiconductor devices | |
| GB1515184A (en) | Semiconductor device manufacture | |
| GB1246294A (en) | Method of manufacturing semiconductor devices | |
| GB1165016A (en) | Processing Semiconductor Bodies to Form Surface Protuberances Thereon. | |
| GB1497199A (en) | Semiconductor devices | |
| US4102732A (en) | Method for manufacturing a semiconductor device | |
| GB1353185A (en) | Method of making a semiconductor device | |
| GB1411864A (en) | Method of manufacturing an interconnection pattern | |
| GB1348811A (en) | Production of schottky contacts | |
| GB1327204A (en) | Semiconductor devices | |
| JPS56137648A (en) | Manufacture of semiconductor device | |
| GB1187185A (en) | Process of Etching Semiconductive Material. | |
| JPS6484724A (en) | Semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |