GB1172491A - A method of manufacturing a semiconductor device - Google Patents

A method of manufacturing a semiconductor device

Info

Publication number
GB1172491A
GB1172491A GB03570/68A GB1357068A GB1172491A GB 1172491 A GB1172491 A GB 1172491A GB 03570/68 A GB03570/68 A GB 03570/68A GB 1357068 A GB1357068 A GB 1357068A GB 1172491 A GB1172491 A GB 1172491A
Authority
GB
United Kingdom
Prior art keywords
oxide
layer
silicon
diffusion
glass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB03570/68A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of GB1172491A publication Critical patent/GB1172491A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Formation Of Insulating Films (AREA)
GB03570/68A 1967-03-29 1968-03-20 A method of manufacturing a semiconductor device Expired GB1172491A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1908267 1967-03-29

Publications (1)

Publication Number Publication Date
GB1172491A true GB1172491A (en) 1969-12-03

Family

ID=11989508

Family Applications (1)

Application Number Title Priority Date Filing Date
GB03570/68A Expired GB1172491A (en) 1967-03-29 1968-03-20 A method of manufacturing a semiconductor device

Country Status (3)

Country Link
FR (1) FR1557549A (enrdf_load_stackoverflow)
GB (1) GB1172491A (enrdf_load_stackoverflow)
NL (1) NL150619B (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007082760A1 (de) * 2006-01-23 2007-07-26 Gp Solar Gmbh Verfahren zur herstellung eines halbleiterbauelements mit unterschiedlich stark dotierten bereichen

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1255995A (en) * 1968-03-04 1971-12-08 Hitachi Ltd Semiconductor device and method of making same
US3615941A (en) * 1968-05-07 1971-10-26 Hitachi Ltd Method for manufacturing semiconductor device with passivation film
JPS501872B1 (enrdf_load_stackoverflow) * 1970-01-30 1975-01-22

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007082760A1 (de) * 2006-01-23 2007-07-26 Gp Solar Gmbh Verfahren zur herstellung eines halbleiterbauelements mit unterschiedlich stark dotierten bereichen
CN101379595B (zh) * 2006-01-23 2011-05-11 Gp太阳能有限公司 用于制造具有不同掺杂浓度的区域的半导体元件的方法

Also Published As

Publication number Publication date
FR1557549A (enrdf_load_stackoverflow) 1969-02-14
DE1764065B2 (de) 1972-11-02
DE1764065A1 (de) 1972-03-02
NL6804373A (enrdf_load_stackoverflow) 1968-09-30
NL150619B (nl) 1976-08-16

Similar Documents

Publication Publication Date Title
GB1170682A (en) Improvements in Planar Semiconductor Devices
ES353793A1 (es) Metodo de fabricacion de un dispositivo semiconductor.
GB1393123A (en) Semiconductor device manufacture
US3694276A (en) Method of making integrated circuits employing selective gold diffusion thru polycrystalline regions
US3341381A (en) Method of making a semiconductor by selective impurity diffusion
JPS5467778A (en) Production of semiconductor device
GB1332931A (en) Methods of manufacturing a semiconductor device
GB1226899A (enrdf_load_stackoverflow)
US3653120A (en) Method of making low resistance polycrystalline silicon contacts to buried collector regions using refractory metal silicides
US3928091A (en) Method for manufacturing a semiconductor device utilizing selective oxidation
GB1504636A (en) Monolithic compound semiconductor arrangements
GB1366991A (en) Semiconductor device manufacture
GB1090649A (en) Surface treatment for semiconductor devices
GB1172491A (en) A method of manufacturing a semiconductor device
IL31371A (en) Monolithic integrated circuit including field effect transistors and bipolar transistors,and method of making
GB1210162A (en) Semiconductor devices
GB1528027A (en) Method of manufacturing integrated injection logic semiconductor devices
US3909318A (en) Method of forming complementary devices utilizing outdiffusion and selective oxidation
US3898107A (en) Method of making a junction-isolated semiconductor integrated circuit device
US3753805A (en) Method of producing planar, double-diffused semiconductor devices
US4224088A (en) Method for manufacturing a semiconductor device
GB1184796A (en) Semiconductor Device
GB1177320A (en) Improvements in or relating to the Production of Planar Semiconductor Components
GB1495460A (en) Semiconductor device manufacture
GB1170145A (en) Diffused Junction Semiconductor Devices and Methods for Fabricating such Devices.

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PE20 Patent expired after termination of 20 years