NL6804373A - - Google Patents
Info
- Publication number
- NL6804373A NL6804373A NL6804373A NL6804373A NL6804373A NL 6804373 A NL6804373 A NL 6804373A NL 6804373 A NL6804373 A NL 6804373A NL 6804373 A NL6804373 A NL 6804373A NL 6804373 A NL6804373 A NL 6804373A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1908267 | 1967-03-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
NL6804373A true NL6804373A (enrdf_load_stackoverflow) | 1968-09-30 |
NL150619B NL150619B (nl) | 1976-08-16 |
Family
ID=11989508
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL686804373A NL150619B (nl) | 1967-03-29 | 1968-03-28 | Werkwijze voor het vervaardigen van een halfgeleiderinrichting en een halfgeleiderinrichting vervaardigd volgens deze werkwijze. |
Country Status (3)
Country | Link |
---|---|
FR (1) | FR1557549A (enrdf_load_stackoverflow) |
GB (1) | GB1172491A (enrdf_load_stackoverflow) |
NL (1) | NL150619B (enrdf_load_stackoverflow) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1255995A (en) * | 1968-03-04 | 1971-12-08 | Hitachi Ltd | Semiconductor device and method of making same |
US3615941A (en) * | 1968-05-07 | 1971-10-26 | Hitachi Ltd | Method for manufacturing semiconductor device with passivation film |
JPS501872B1 (enrdf_load_stackoverflow) * | 1970-01-30 | 1975-01-22 | ||
DE102006003283A1 (de) * | 2006-01-23 | 2007-07-26 | Gp Solar Gmbh | Verfahren zur Herstellung eines Halbleiterbauelements mit unterschiedlich stark dotierten Bereichen |
-
1968
- 1968-03-20 GB GB03570/68A patent/GB1172491A/en not_active Expired
- 1968-03-28 NL NL686804373A patent/NL150619B/xx not_active IP Right Cessation
- 1968-03-28 FR FR1557549D patent/FR1557549A/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
NL150619B (nl) | 1976-08-16 |
FR1557549A (enrdf_load_stackoverflow) | 1969-02-14 |
DE1764065B2 (de) | 1972-11-02 |
GB1172491A (en) | 1969-12-03 |
DE1764065A1 (de) | 1972-03-02 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
NL80 | Information provided on patent owner name for an already discontinued patent |
Owner name: HITACHI |
|
V4 | Discontinued because of reaching the maximum lifetime of a patent |