GB1165037A - Method of Manufacturing Crystals. - Google Patents
Method of Manufacturing Crystals.Info
- Publication number
- GB1165037A GB1165037A GB48029/67A GB4802967A GB1165037A GB 1165037 A GB1165037 A GB 1165037A GB 48029/67 A GB48029/67 A GB 48029/67A GB 4802967 A GB4802967 A GB 4802967A GB 1165037 A GB1165037 A GB 1165037A
- Authority
- GB
- United Kingdom
- Prior art keywords
- solution
- oct
- gallium
- manufacturing crystals
- crystals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B17/00—Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL6614999A NL6614999A (ru) | 1966-10-22 | 1966-10-22 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1165037A true GB1165037A (en) | 1969-09-24 |
Family
ID=19797982
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB48029/67A Expired GB1165037A (en) | 1966-10-22 | 1967-10-23 | Method of Manufacturing Crystals. |
Country Status (9)
Country | Link |
---|---|
US (1) | US3597171A (ru) |
AT (1) | AT270754B (ru) |
BE (1) | BE705462A (ru) |
CH (1) | CH494065A (ru) |
DE (1) | DE1619987B2 (ru) |
DK (1) | DK115390B (ru) |
GB (1) | GB1165037A (ru) |
NL (1) | NL6614999A (ru) |
SE (1) | SE309966B (ru) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50119566A (ru) * | 1974-03-01 | 1975-09-19 | ||
US4415545A (en) * | 1980-12-15 | 1983-11-15 | Monkowski Joseph R | Solid film growth via preferential etching of liquid solutions |
US5314571A (en) * | 1992-05-13 | 1994-05-24 | Midwest Research Institute | Crystallization from high temperature solutions of Si in copper |
-
1966
- 1966-10-22 NL NL6614999A patent/NL6614999A/xx unknown
-
1967
- 1967-10-04 DE DE1967N0031338 patent/DE1619987B2/de active Granted
- 1967-10-19 CH CH1467267A patent/CH494065A/de not_active IP Right Cessation
- 1967-10-19 AT AT944167A patent/AT270754B/de active
- 1967-10-19 US US676511A patent/US3597171A/en not_active Expired - Lifetime
- 1967-10-19 DK DK520967AA patent/DK115390B/da unknown
- 1967-10-19 SE SE14330/67A patent/SE309966B/xx unknown
- 1967-10-20 BE BE705462D patent/BE705462A/xx unknown
- 1967-10-23 GB GB48029/67A patent/GB1165037A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
SE309966B (ru) | 1969-04-14 |
DK115390B (da) | 1969-10-06 |
NL6614999A (ru) | 1968-04-23 |
CH494065A (de) | 1970-07-31 |
DE1619987A1 (de) | 1970-03-26 |
DE1619987B2 (de) | 1977-01-20 |
AT270754B (de) | 1969-05-12 |
BE705462A (ru) | 1968-04-22 |
US3597171A (en) | 1971-08-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB916888A (en) | Improvements in and relating to the epitaxial deposition of semi-conductor material | |
GB1165037A (en) | Method of Manufacturing Crystals. | |
FR2356271B1 (ru) | ||
ES462861A1 (es) | Un metodo para la produccion de dextrosa en polvo. | |
GB1285686A (en) | A method of doping a gas-phase semiconductor layer | |
GB1482016A (en) | Epitaxial deposition of semiconductor material | |
JPS5427361A (en) | Manufacture of semiconductor integrated circuit | |
GB1305737A (ru) | ||
JPS5267260A (en) | Manufacture of iii-v group compounds semiconductor epitaxial laminatio n crystal | |
JPS524782A (en) | Liquid phase epitaxial growth method | |
JPS52151562A (en) | Liquid phase growth of compound semiconductors | |
JPS5252366A (en) | Improvement of crystallinity of semiconductor crystals | |
CA2008946A1 (en) | Vapor-phase epitaxial growth method | |
GB1362985A (en) | Single crystal | |
JPS534466A (en) | Doping method of group ii # elements into boron phosphide semiconductor | |
JPS5267571A (en) | Crystallization method for semiconductor | |
JPS51126049A (en) | Compounded semi-conductor gaseous phase epitaxial growth method | |
GB1068354A (en) | Improvements relating to methods of growing crystals epitaxially | |
JPS5383577A (en) | Molecule beam epitaxial growth method | |
JPS51114383A (en) | Liquid phase epitaxial crystal growth | |
JPS5264873A (en) | Production of boron phosphide semiconductor device | |
JPS5249766A (en) | Apparatus for producing semiconductor crystal | |
GB1027159A (en) | Improvements in or relating to processes for the production of ribbon-shaped dendrites of semiconductor material | |
GB1368660A (en) | Process for preparing gaas1-xpx crystal | |
GB1077265A (en) | Improvements in or relating to semiconductor arrangements |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PCNP | Patent ceased through non-payment of renewal fee |