GB1147420A - Improvements in and relating to semiconductor devices - Google Patents

Improvements in and relating to semiconductor devices

Info

Publication number
GB1147420A
GB1147420A GB50939/68A GB5093968A GB1147420A GB 1147420 A GB1147420 A GB 1147420A GB 50939/68 A GB50939/68 A GB 50939/68A GB 5093968 A GB5093968 A GB 5093968A GB 1147420 A GB1147420 A GB 1147420A
Authority
GB
United Kingdom
Prior art keywords
layer
base
emitter
electrode
collector region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB50939/68A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NL6405411A external-priority patent/NL6405411A/xx
Priority claimed from NL6510237A external-priority patent/NL6510237A/xx
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1147420A publication Critical patent/GB1147420A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/14—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of neutralising means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Integrated Circuits (AREA)
GB50939/68A 1964-05-15 1966-03-14 Improvements in and relating to semiconductor devices Expired GB1147420A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
NL6405411A NL6405411A (cg-RX-API-DMAC7.html) 1964-05-15 1964-05-15
NL6509551 1965-07-23
NL6510237A NL6510237A (cg-RX-API-DMAC7.html) 1965-08-06 1965-08-06

Publications (1)

Publication Number Publication Date
GB1147420A true GB1147420A (en) 1969-04-02

Family

ID=27351310

Family Applications (2)

Application Number Title Priority Date Filing Date
GB50939/68A Expired GB1147420A (en) 1964-05-15 1966-03-14 Improvements in and relating to semiconductor devices
GB39177/65A Expired GB1146600A (en) 1964-05-15 1966-03-14 Improvements in and relating to semiconductor devices

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB39177/65A Expired GB1146600A (en) 1964-05-15 1966-03-14 Improvements in and relating to semiconductor devices

Country Status (4)

Country Link
CH (1) CH436491A (cg-RX-API-DMAC7.html)
DK (1) DK117162B (cg-RX-API-DMAC7.html)
GB (2) GB1147420A (cg-RX-API-DMAC7.html)
NO (1) NO119910B (cg-RX-API-DMAC7.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5053850A (en) * 1988-03-14 1991-10-01 Motorola, Inc. Bonding pad for semiconductor devices

Also Published As

Publication number Publication date
DK117162B (da) 1970-03-23
CH436491A (de) 1967-05-31
NO119910B (cg-RX-API-DMAC7.html) 1970-07-27
GB1146600A (en) 1969-03-26

Similar Documents

Publication Publication Date Title
US3138747A (en) Integrated semiconductor circuit device
US2985804A (en) Compound transistor
US3373323A (en) Planar semiconductor device with an incorporated shield member reducing feedback capacitance
GB1236603A (en) Transistors
GB1002734A (en) Coupling transistor
GB1425986A (en) Semiconductor devices comprising insulated-gate- field-effect transistors
GB1154805A (en) Monolithic Semiconductor Microcircuits with Improved Means for Connecting Points of Common Potential
GB1244668A (en) Improvements relating to semiconductor devices
GB1254302A (en) Improvements in insulated gate field effect transistors
GB1099381A (en) Solid state field-effect devices
US3751726A (en) Semiconductor device employing darlington circuit
GB1069755A (en) Improvements in or relating to semiconductor devices
US3631311A (en) Semiconductor circuit arrangement with integrated base leakage resistance
GB1213636A (en) Switching circuit
GB1311446A (en) Semiconductor devices
GB1278443A (en) Semiconductor devices
US3755722A (en) Resistor isolation for double mesa transistors
GB1106787A (en) Improvements in semiconductor devices
US3896475A (en) Semiconductor device comprising resistance region having portions lateral to conductors
GB1135555A (en) Improvements in or relating to semiconductor devices
GB1088776A (en) Semiconductor controlled rectifier having a shorted emitter
US3482152A (en) Semiconductor devices having a field effect transistor structure
GB1209740A (en) Transistors
GB1182324A (en) Improvements in or relating to Semiconductor Matrices
GB1146600A (en) Improvements in and relating to semiconductor devices