GB1146600A - Improvements in and relating to semiconductor devices - Google Patents

Improvements in and relating to semiconductor devices

Info

Publication number
GB1146600A
GB1146600A GB3917765A GB3917765A GB1146600A GB 1146600 A GB1146600 A GB 1146600A GB 3917765 A GB3917765 A GB 3917765A GB 3917765 A GB3917765 A GB 3917765A GB 1146600 A GB1146600 A GB 1146600A
Authority
GB
United Kingdom
Prior art keywords
electrode
base
region
emitter
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3917765A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NL6405411A external-priority patent/NL6405411A/xx
Priority claimed from NL6510237A external-priority patent/NL6510237A/xx
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1146600A publication Critical patent/GB1146600A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/14—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of neutralising means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

1,146,600. Transistors. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. 14 March, 1966 [23 July 1965; 6 Aug., 1965], No. 39177/65. Heading H1K. A planar transistor has emitter and base regions of a smaller lateral area than a collector region and connected to metallic electrode areas overlying the collector region on an insulating layer. A screening layer is provided between one of the electrode areas and the collector region and is connected to the other electrode area by a metallic stripe extending over the insulating layer. The screening layer, which is separated from the overlying electrode area by the insulating layer, is a semi-conductor region isolated from the collector region in which it is formed by a PN junction formed between them. The embodiment described is an NPN silicon transistor with its emitter electrode screened and is to be used in grounded base configuration at frequencies above 500 MHz. The N type wafer is provided first with a boron-doped base region 3 and screening region 28 by diffusion through an apertured oxide layer and subsequently with two partial emitter regions 2 by indiffusion of phosphorus. Aluminium is deposited over the entire surface and selectively etched away to leave base 6 and emitter 5 electrode areas and the stripes 27 interconnecting the screening layer of the base electrode area. The base contact fingers 17 and interconnecting stripes 27 are kept in a straight line to keep the output shunt capacitance low. The transistor is completed by the provision of a collector electrode and by encapsulation.
GB3917765A 1964-05-15 1966-03-14 Improvements in and relating to semiconductor devices Expired GB1146600A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
NL6405411A NL6405411A (en) 1964-05-15 1964-05-15
NL6509551 1965-07-23
NL6510237A NL6510237A (en) 1965-08-06 1965-08-06

Publications (1)

Publication Number Publication Date
GB1146600A true GB1146600A (en) 1969-03-26

Family

ID=27351310

Family Applications (2)

Application Number Title Priority Date Filing Date
GB5093968A Expired GB1147420A (en) 1964-05-15 1966-03-14 Improvements in and relating to semiconductor devices
GB3917765A Expired GB1146600A (en) 1964-05-15 1966-03-14 Improvements in and relating to semiconductor devices

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB5093968A Expired GB1147420A (en) 1964-05-15 1966-03-14 Improvements in and relating to semiconductor devices

Country Status (4)

Country Link
CH (1) CH436491A (en)
DK (1) DK117162B (en)
GB (2) GB1147420A (en)
NO (1) NO119910B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5053850A (en) * 1988-03-14 1991-10-01 Motorola, Inc. Bonding pad for semiconductor devices

Also Published As

Publication number Publication date
GB1147420A (en) 1969-04-02
CH436491A (en) 1967-05-31
NO119910B (en) 1970-07-27
DK117162B (en) 1970-03-23

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