GB1119297A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB1119297A
GB1119297A GB51819/66A GB5181966A GB1119297A GB 1119297 A GB1119297 A GB 1119297A GB 51819/66 A GB51819/66 A GB 51819/66A GB 5181966 A GB5181966 A GB 5181966A GB 1119297 A GB1119297 A GB 1119297A
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB51819/66A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
ITT Inc
Original Assignee
Deutsche ITT Industries GmbH
ITT Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH, ITT Industries Inc filed Critical Deutsche ITT Industries GmbH
Publication of GB1119297A publication Critical patent/GB1119297A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30Devices controlled by electric currents or voltages
    • H10D48/32Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36Unipolar devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00Resistors, capacitors or inductors
    • H10D1/40Resistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • H10D18/40Thyristors with turn-on by field effect 
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60Impurity distributions or concentrations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
GB51819/66A 1965-11-19 1966-11-18 Semiconductor device Expired GB1119297A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US50871765A 1965-11-19 1965-11-19

Publications (1)

Publication Number Publication Date
GB1119297A true GB1119297A (en) 1968-07-10

Family

ID=24023792

Family Applications (1)

Application Number Title Priority Date Filing Date
GB51819/66A Expired GB1119297A (en) 1965-11-19 1966-11-18 Semiconductor device

Country Status (3)

Country Link
DE (1) DE1539877A1 (enrdf_load_stackoverflow)
GB (1) GB1119297A (enrdf_load_stackoverflow)
NL (1) NL6616236A (enrdf_load_stackoverflow)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2124542A1 (enrdf_load_stackoverflow) * 1971-02-08 1972-09-22 Matsushita Electric Ind Co Ltd
FR2393431A1 (fr) * 1976-07-19 1978-12-29 Westinghouse Electric Corp Thyristor a haute tension
FR2443139A1 (fr) * 1978-12-01 1980-06-27 Radiotechnique Compelec Dispositif semi-conducteur monolithique de type triac
DE3024939A1 (de) * 1979-07-02 1981-01-15 Hitachi Ltd Halbleiterbauelement hoher durchbruchsspannung
US4400711A (en) 1981-03-31 1983-08-23 Rca Corporation Integrated circuit protection device
US4595941A (en) * 1980-12-03 1986-06-17 Rca Corporation Protection circuit for integrated circuit devices
EP0181002A3 (en) * 1984-11-09 1988-09-21 Hitachi, Ltd. Semiconductor device having high breakdown voltage

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49134282A (enrdf_load_stackoverflow) * 1973-04-25 1974-12-24

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2124542A1 (enrdf_load_stackoverflow) * 1971-02-08 1972-09-22 Matsushita Electric Ind Co Ltd
FR2393431A1 (fr) * 1976-07-19 1978-12-29 Westinghouse Electric Corp Thyristor a haute tension
FR2443139A1 (fr) * 1978-12-01 1980-06-27 Radiotechnique Compelec Dispositif semi-conducteur monolithique de type triac
DE3024939A1 (de) * 1979-07-02 1981-01-15 Hitachi Ltd Halbleiterbauelement hoher durchbruchsspannung
US4595941A (en) * 1980-12-03 1986-06-17 Rca Corporation Protection circuit for integrated circuit devices
US4400711A (en) 1981-03-31 1983-08-23 Rca Corporation Integrated circuit protection device
EP0181002A3 (en) * 1984-11-09 1988-09-21 Hitachi, Ltd. Semiconductor device having high breakdown voltage

Also Published As

Publication number Publication date
NL6616236A (enrdf_load_stackoverflow) 1967-05-22
DE1539877A1 (de) 1969-12-11

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