FR2393431A1 - Thyristor a haute tension - Google Patents

Thyristor a haute tension

Info

Publication number
FR2393431A1
FR2393431A1 FR7722122A FR7722122A FR2393431A1 FR 2393431 A1 FR2393431 A1 FR 2393431A1 FR 7722122 A FR7722122 A FR 7722122A FR 7722122 A FR7722122 A FR 7722122A FR 2393431 A1 FR2393431 A1 FR 2393431A1
Authority
FR
France
Prior art keywords
thyristor
high voltage
junctions
electric field
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7722122A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of FR2393431A1 publication Critical patent/FR2393431A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/7408—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a capacitor or a resistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

L'invention a trait à un thyristor. Ce thyristor permet d'obtenir la tension de rupture théorique maximum des jonctions de blocage directe et inverse. Un répartiteur de champ électrique annulaire ponte les jonctions de blocage du thyristor, les deux jonctions débouchant sur une surface semi-conductrice principale du thyristor. La couche résistive répartit le champ électrique dans une mesure suffisante pour élever la tension de rupture de surface jusqu'à la capacité de rupture dans la masse. Ce thyristor est plus particulièrement un thyristor à haute tension.
FR7722122A 1976-07-19 1977-07-19 Thyristor a haute tension Withdrawn FR2393431A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US70635576A 1976-07-19 1976-07-19

Publications (1)

Publication Number Publication Date
FR2393431A1 true FR2393431A1 (fr) 1978-12-29

Family

ID=24837198

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7722122A Withdrawn FR2393431A1 (fr) 1976-07-19 1977-07-19 Thyristor a haute tension

Country Status (12)

Country Link
JP (1) JPS5311586A (fr)
AU (1) AU514314B2 (fr)
BE (1) BE856827A (fr)
CA (1) CA1087756A (fr)
DE (1) DE2732360A1 (fr)
FR (1) FR2393431A1 (fr)
GB (1) GB1585790A (fr)
IN (1) IN148931B (fr)
NL (1) NL7706586A (fr)
PL (1) PL113044B1 (fr)
SE (1) SE7708242L (fr)
ZA (1) ZA773577B (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56154525A (en) * 1980-04-23 1981-11-30 Mitsubishi Rayon Co Production of special knot like processed yarn
JPS56154527A (en) * 1980-04-28 1981-11-30 Mitsubishi Rayon Co Production of special knot like processed yarn
US4595941A (en) * 1980-12-03 1986-06-17 Rca Corporation Protection circuit for integrated circuit devices
US10197999B2 (en) 2015-10-16 2019-02-05 Lemmings, Llc Robotic golf caddy

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1119297A (en) * 1965-11-19 1968-07-10 Itt Semiconductor device
US3432731A (en) * 1966-10-31 1969-03-11 Fairchild Camera Instr Co Planar high voltage four layer structures
DE2154122A1 (de) * 1970-10-30 1972-05-04 Motorola Inc Halbleiteranordnung mit Hoch spannungspassivierung und Verfahren zu deren Herstellung
DE2460682A1 (de) * 1973-12-26 1975-07-03 Mitsubishi Electric Corp Halbleitervorrichtung

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1119297A (en) * 1965-11-19 1968-07-10 Itt Semiconductor device
US3432731A (en) * 1966-10-31 1969-03-11 Fairchild Camera Instr Co Planar high voltage four layer structures
DE2154122A1 (de) * 1970-10-30 1972-05-04 Motorola Inc Halbleiteranordnung mit Hoch spannungspassivierung und Verfahren zu deren Herstellung
DE2460682A1 (de) * 1973-12-26 1975-07-03 Mitsubishi Electric Corp Halbleitervorrichtung

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/72 *

Also Published As

Publication number Publication date
PL199746A1 (pl) 1978-03-28
BE856827A (fr) 1978-01-16
PL113044B1 (en) 1980-11-29
SE7708242L (sv) 1978-01-20
GB1585790A (en) 1981-03-11
NL7706586A (nl) 1978-01-23
ZA773577B (en) 1978-05-30
IN148931B (fr) 1981-07-25
DE2732360A1 (de) 1978-01-26
AU2627377A (en) 1979-01-04
JPS5311586A (en) 1978-02-02
AU514314B2 (en) 1981-02-05
CA1087756A (fr) 1980-10-14

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Legal Events

Date Code Title Description
ST Notification of lapse