GB1119297A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- GB1119297A GB1119297A GB51819/66A GB5181966A GB1119297A GB 1119297 A GB1119297 A GB 1119297A GB 51819/66 A GB51819/66 A GB 51819/66A GB 5181966 A GB5181966 A GB 5181966A GB 1119297 A GB1119297 A GB 1119297A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US50871765A | 1965-11-19 | 1965-11-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1119297A true GB1119297A (en) | 1968-07-10 |
Family
ID=24023792
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB51819/66A Expired GB1119297A (en) | 1965-11-19 | 1966-11-18 | Semiconductor device |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE1539877A1 (en) |
GB (1) | GB1119297A (en) |
NL (1) | NL6616236A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2124542A1 (en) * | 1971-02-08 | 1972-09-22 | Matsushita Electric Ind Co Ltd | |
FR2393431A1 (en) * | 1976-07-19 | 1978-12-29 | Westinghouse Electric Corp | HIGH VOLTAGE THYRISTOR |
FR2443139A1 (en) * | 1978-12-01 | 1980-06-27 | Radiotechnique Compelec | Mesa structure monolithic triac esp. light operated type - has two thyristors sharing oppositely conducting regions and terminal bridging vertically divided base layer |
DE3024939A1 (en) * | 1979-07-02 | 1981-01-15 | Hitachi Ltd | SEMICONDUCTOR COMPONENT HIGH BREAKTHROUGH VOLTAGE |
EP0181002A2 (en) * | 1984-11-09 | 1986-05-14 | Hitachi, Ltd. | Semiconductor device having high breakdown voltage |
US4595941A (en) * | 1980-12-03 | 1986-06-17 | Rca Corporation | Protection circuit for integrated circuit devices |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49134282A (en) * | 1973-04-25 | 1974-12-24 |
-
1966
- 1966-11-15 DE DE19661539877 patent/DE1539877A1/en active Pending
- 1966-11-18 NL NL6616236A patent/NL6616236A/xx unknown
- 1966-11-18 GB GB51819/66A patent/GB1119297A/en not_active Expired
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2124542A1 (en) * | 1971-02-08 | 1972-09-22 | Matsushita Electric Ind Co Ltd | |
FR2393431A1 (en) * | 1976-07-19 | 1978-12-29 | Westinghouse Electric Corp | HIGH VOLTAGE THYRISTOR |
FR2443139A1 (en) * | 1978-12-01 | 1980-06-27 | Radiotechnique Compelec | Mesa structure monolithic triac esp. light operated type - has two thyristors sharing oppositely conducting regions and terminal bridging vertically divided base layer |
DE3024939A1 (en) * | 1979-07-02 | 1981-01-15 | Hitachi Ltd | SEMICONDUCTOR COMPONENT HIGH BREAKTHROUGH VOLTAGE |
US4595941A (en) * | 1980-12-03 | 1986-06-17 | Rca Corporation | Protection circuit for integrated circuit devices |
EP0181002A2 (en) * | 1984-11-09 | 1986-05-14 | Hitachi, Ltd. | Semiconductor device having high breakdown voltage |
EP0181002A3 (en) * | 1984-11-09 | 1988-09-21 | Hitachi, Ltd. | Semiconductor device having high breakdown voltage |
Also Published As
Publication number | Publication date |
---|---|
NL6616236A (en) | 1967-05-22 |
DE1539877A1 (en) | 1969-12-11 |
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