GB1111409A - Improvements in or relating to gunn effect semi-conductor arrangements - Google Patents

Improvements in or relating to gunn effect semi-conductor arrangements

Info

Publication number
GB1111409A
GB1111409A GB9570/67A GB957067A GB1111409A GB 1111409 A GB1111409 A GB 1111409A GB 9570/67 A GB9570/67 A GB 9570/67A GB 957067 A GB957067 A GB 957067A GB 1111409 A GB1111409 A GB 1111409A
Authority
GB
United Kingdom
Prior art keywords
gunn effect
electrodes
relating
conductor arrangements
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB9570/67A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefunken Patentverwertungs GmbH
Original Assignee
Telefunken Patentverwertungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefunken Patentverwertungs GmbH filed Critical Telefunken Patentverwertungs GmbH
Publication of GB1111409A publication Critical patent/GB1111409A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B9/00—Generation of oscillations using transit-time effects
    • H03B9/12—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F15/00—Amplifiers using galvano-magnetic effects not involving mechanical movement, e.g. using Hall effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00—Bulk negative-resistance effect devices
    • H10N80/10—Gunn-effect devices
    • H10N80/107—Gunn diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

1,111,409. Gunn effect devices. TELEFUNKEN PATENTVERWERTUNGS G.m.b.H. 28 Feb., 1967 [1 March, 1966], No. 9570/67. Heading H1K. In a Gunn effect device at least one of the cross-sectional dimensions of the semi-conductor body increases in the direction of movement of the charge carriers. The body may have a longitudinal section in the form of a trapezium with the electrodes on the parallel sides, or it may be shaped as a sector of a circle or as a hemisphere, the cathode being at the centre and the anode around the curved surface so that the distance between the electrodes is the same in any direction. The electrodes may be deposited electrolytically or held in contact with the body by pressure.
GB9570/67A 1966-03-01 1967-02-28 Improvements in or relating to gunn effect semi-conductor arrangements Expired GB1111409A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DET30555A DE1256729B (en) 1966-03-01 1966-03-01 Arrangement for generating and amplifying electromagnetic vibrations in the microwave range

Publications (1)

Publication Number Publication Date
GB1111409A true GB1111409A (en) 1968-04-24

Family

ID=7555660

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9570/67A Expired GB1111409A (en) 1966-03-01 1967-02-28 Improvements in or relating to gunn effect semi-conductor arrangements

Country Status (2)

Country Link
DE (1) DE1256729B (en)
GB (1) GB1111409A (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT209377B (en) * 1956-08-30 1960-06-10 Siemens Ag Device for generating plasma oscillations in electronic semiconductors

Also Published As

Publication number Publication date
DE1256729B (en) 1967-12-21

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