GB1105206A - Device for changing pressure energy into electric energy - Google Patents

Device for changing pressure energy into electric energy

Info

Publication number
GB1105206A
GB1105206A GB2349166A GB2349166A GB1105206A GB 1105206 A GB1105206 A GB 1105206A GB 2349166 A GB2349166 A GB 2349166A GB 2349166 A GB2349166 A GB 2349166A GB 1105206 A GB1105206 A GB 1105206A
Authority
GB
United Kingdom
Prior art keywords
piezo
layer
pressure
electric
electric layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2349166A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefonaktiebolaget LM Ericsson AB
Original Assignee
Telefonaktiebolaget LM Ericsson AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefonaktiebolaget LM Ericsson AB filed Critical Telefonaktiebolaget LM Ericsson AB
Publication of GB1105206A publication Critical patent/GB1105206A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R23/00Transducers other than those covered by groups H04R9/00 - H04R21/00
    • H04R23/006Transducers other than those covered by groups H04R9/00 - H04R21/00 using solid state devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Pressure Sensors (AREA)

Abstract

1,105,206. Pressure sensitive devices. TELEFONAKTIEBOLAGET L. M. ERICSSON. 25 May, 1966 [25 May, 1965], No. 23491/66. Heading H1K. [Also in Divisions G1 and H4] A pressure-sensitive device comprises an insulated gate field effect transistor the insulated gate region comprising a piezo-electric layer and a normal dielectric layer so that stress on the piezo-electric layer can exert field effect conductivity control on the channel. Fig. 2 shows a high resistivity P-type silicon substrate containing source and drain N-type regions with electrodes S and D; an oxide layer 7 overlies the source-drain channel and a piezo-electric layer 9 of lead-zircon-titanate or barium titanate with electrode G extending over the oxide layer. A pin K is used to apply pressure to piezo-electric layer 8, the resulting electric field exercising field effect control over the source-drain current. The device may be encased in a sealed casing with pin K in contact with a diaphragm either directly or via a spring or " bouncing putty " (i.e. material with time dependent elasticity properties), and may be used as a microphone or pressure transducer. In a further embodiment a resilient arm co-operates with pin K to provide a pressure controlled switch. The piezo-electric layer may be vaporized on to the dielectric layer or a thin tablet of the material may be glued thereto.
GB2349166A 1965-05-25 1966-05-25 Device for changing pressure energy into electric energy Expired GB1105206A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE683065 1965-05-25

Publications (1)

Publication Number Publication Date
GB1105206A true GB1105206A (en) 1968-03-06

Family

ID=20269707

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2349166A Expired GB1105206A (en) 1965-05-25 1966-05-25 Device for changing pressure energy into electric energy

Country Status (4)

Country Link
BE (1) BE681584A (en)
DE (1) DE1259599B (en)
GB (1) GB1105206A (en)
NL (1) NL6607212A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7892859B2 (en) 2008-02-13 2011-02-22 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Device and method for switching electric signals and powers
CN111024296A (en) * 2019-12-30 2020-04-17 浙江清华柔性电子技术研究院 Pressure sensor and preparation method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7892859B2 (en) 2008-02-13 2011-02-22 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Device and method for switching electric signals and powers
CN111024296A (en) * 2019-12-30 2020-04-17 浙江清华柔性电子技术研究院 Pressure sensor and preparation method thereof
CN111024296B (en) * 2019-12-30 2023-11-28 浙江清华柔性电子技术研究院 Pressure sensor and method for producing the same

Also Published As

Publication number Publication date
BE681584A (en) 1966-10-31
DE1259599B (en) 1968-01-25
NL6607212A (en) 1966-11-28

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