GB1101947A - Electroluminescent diodes - Google Patents
Electroluminescent diodesInfo
- Publication number
- GB1101947A GB1101947A GB2657166A GB2657166A GB1101947A GB 1101947 A GB1101947 A GB 1101947A GB 2657166 A GB2657166 A GB 2657166A GB 2657166 A GB2657166 A GB 2657166A GB 1101947 A GB1101947 A GB 1101947A
- Authority
- GB
- United Kingdom
- Prior art keywords
- junction
- semi
- gaas
- doped gaas
- zones
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 5
- 239000004065 semiconductor Substances 0.000 abstract 3
- 239000002800 charge carrier Substances 0.000 abstract 2
- 239000011701 zinc Substances 0.000 abstract 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000002360 preparation method Methods 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
An electroluminescent diode comprises a semi-conductor portion with zones 11 and 12 defining pin junction 13 disposed symmetriclly in relation to hemispherical semi-conductor portion 14 of radius larger than any PN radiating face dimension, portion 14 having reduced impurity centre concentration and charge carrier concentration less than zones 11 and 12, this arrangement reducing internal absorptive <PICT:1101947/C4-C5/1> losses and total reflections. Zone 12 may be Te, Se, Si or Sn doped GaAs, zone 11, Zn doped GaAs; GaP and others amongst \sHAIII-BV compounds. The boundary between 12 and 14 may project in cylindrical form towards the PN junction and the part of 14 closed to 12 may be cylindrical and r/n deep, r being hemisphere radius, and n the refractive index of 14. In a method of preparation, a GaAs source with 2.1017 Te atoms/cc. heated to 1000 DEG C produces a 50a thick highly n-doped GaAs layer on a monocrystalline weakly n-conducting GaAs wafer at 800 DEG C. The PN junction is obtained by heating for 1 hour at 900 DEG C. with zinc. Round cylinders are stamped out, etched and ground. Alternatively, the PN junction may be produced by diffusing two doping substances into a low charge carrier concentrated semi-conductor producing opposite conductivity types.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0098033 | 1965-07-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1101947A true GB1101947A (en) | 1968-02-07 |
Family
ID=7521174
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2657166A Expired GB1101947A (en) | 1965-07-07 | 1966-06-14 | Electroluminescent diodes |
Country Status (5)
| Country | Link |
|---|---|
| CH (1) | CH446527A (en) |
| DE (1) | DE1489518A1 (en) |
| GB (1) | GB1101947A (en) |
| NL (1) | NL6609535A (en) |
| SE (1) | SE301186B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3041228A1 (en) * | 1980-11-03 | 1982-05-13 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Mesa-type pillar constructed LED - has high reflection base electrode and angled column construction |
| US4744672A (en) * | 1980-03-11 | 1988-05-17 | Semikron Gesellschaft fur Gleichrichterbau und Elektronik mbH | Semiconductor arrangement |
| GB2206447A (en) * | 1987-06-29 | 1989-01-05 | Secr Defence | Lensed photodetector |
-
1965
- 1965-07-07 DE DE19651489518 patent/DE1489518A1/en active Pending
-
1966
- 1966-06-09 CH CH837966A patent/CH446527A/en unknown
- 1966-06-14 GB GB2657166A patent/GB1101947A/en not_active Expired
- 1966-06-28 SE SE878366A patent/SE301186B/xx unknown
- 1966-07-07 NL NL6609535A patent/NL6609535A/xx unknown
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4744672A (en) * | 1980-03-11 | 1988-05-17 | Semikron Gesellschaft fur Gleichrichterbau und Elektronik mbH | Semiconductor arrangement |
| DE3041228A1 (en) * | 1980-11-03 | 1982-05-13 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Mesa-type pillar constructed LED - has high reflection base electrode and angled column construction |
| GB2206447A (en) * | 1987-06-29 | 1989-01-05 | Secr Defence | Lensed photodetector |
| GB2206447B (en) * | 1987-06-29 | 1991-05-01 | Secr Defence | Lensed photodetector array |
Also Published As
| Publication number | Publication date |
|---|---|
| SE301186B (en) | 1968-05-27 |
| DE1489518A1 (en) | 1969-04-03 |
| NL6609535A (en) | 1967-01-09 |
| CH446527A (en) | 1967-11-15 |
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