GB1081385A - Improvements in two-terminal electrical reactance circuits - Google Patents
Improvements in two-terminal electrical reactance circuitsInfo
- Publication number
- GB1081385A GB1081385A GB28929/66A GB2892966A GB1081385A GB 1081385 A GB1081385 A GB 1081385A GB 28929/66 A GB28929/66 A GB 28929/66A GB 2892966 A GB2892966 A GB 2892966A GB 1081385 A GB1081385 A GB 1081385A
- Authority
- GB
- United Kingdom
- Prior art keywords
- reactance circuits
- terminal electrical
- electrical reactance
- resistance
- circuits
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000003990 capacitor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
- H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/46—One-port networks
- H03H11/48—One-port networks simulating reactances
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Networks Using Active Elements (AREA)
Abstract
1,081,385. Reactance circuits. INTERNATIONAL BUSINESS MACHINES CORPORATION. June 28, 1966, No. 28929/66. Heading H3R. [Also in Division H1] The circuit shown is equivalent to an inductance and may be manufactured as an integrated circuit. The capacitor C may be omitted (Fig. 3, not shown) and the resistance R may be replaced by a direct connection (Fig. 1, not shown). The emitter of T2 may be joined to the base of T1 through a resistance or through a F.E.T. having its gate connected to its source or drain. The transistors T1 and T2 may both be PNP types (Fig. 2, not shown).
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB28929/66A GB1081385A (en) | 1966-06-28 | 1966-06-28 | Improvements in two-terminal electrical reactance circuits |
FR8494A FR1523761A (en) | 1966-06-28 | 1967-05-09 | Electric circuit with inductive properties |
DE19671589953 DE1589953B2 (en) | 1966-06-28 | 1967-06-10 | CIRCUIT ARRANGEMENT FOR REALIZING AN INDUCTIVITY |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB28929/66A GB1081385A (en) | 1966-06-28 | 1966-06-28 | Improvements in two-terminal electrical reactance circuits |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1081385A true GB1081385A (en) | 1967-08-31 |
Family
ID=10283489
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB28929/66A Expired GB1081385A (en) | 1966-06-28 | 1966-06-28 | Improvements in two-terminal electrical reactance circuits |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE1589953B2 (en) |
FR (1) | FR1523761A (en) |
GB (1) | GB1081385A (en) |
-
1966
- 1966-06-28 GB GB28929/66A patent/GB1081385A/en not_active Expired
-
1967
- 1967-05-09 FR FR8494A patent/FR1523761A/en not_active Expired
- 1967-06-10 DE DE19671589953 patent/DE1589953B2/en active Pending
Also Published As
Publication number | Publication date |
---|---|
DE1589953B2 (en) | 1971-11-11 |
FR1523761A (en) | 1968-05-03 |
DE1589953A1 (en) | 1970-05-14 |
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