GB1057810A - Process for the production of a thyristor of the pnpn-type - Google Patents

Process for the production of a thyristor of the pnpn-type

Info

Publication number
GB1057810A
GB1057810A GB53332/65A GB5333265A GB1057810A GB 1057810 A GB1057810 A GB 1057810A GB 53332/65 A GB53332/65 A GB 53332/65A GB 5333265 A GB5333265 A GB 5333265A GB 1057810 A GB1057810 A GB 1057810A
Authority
GB
United Kingdom
Prior art keywords
central
type zone
type
pnpn
thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB53332/65A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens Corp
Original Assignee
Siemens Schuckertwerke AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens Corp filed Critical Siemens Schuckertwerke AG
Publication of GB1057810A publication Critical patent/GB1057810A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/53—Physical imperfections the imperfections being within the semiconductor body 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/062—Gold diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/904—Charge carrier lifetime control

Landscapes

  • Thyristors (AREA)
GB53332/65A 1964-12-16 1965-12-15 Process for the production of a thyristor of the pnpn-type Expired GB1057810A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0094642 1964-12-16

Publications (1)

Publication Number Publication Date
GB1057810A true GB1057810A (en) 1967-02-08

Family

ID=7518828

Family Applications (1)

Application Number Title Priority Date Filing Date
GB53332/65A Expired GB1057810A (en) 1964-12-16 1965-12-15 Process for the production of a thyristor of the pnpn-type

Country Status (5)

Country Link
US (1) US3442722A (https=)
BE (1) BE673770A (https=)
FR (1) FR1461818A (https=)
GB (1) GB1057810A (https=)
NL (1) NL6515553A (https=)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2003347A1 (https=) * 1968-03-06 1969-11-07 Westinghouse Electric Corp
FR2044768A1 (https=) * 1969-05-05 1971-02-26 Gen Electric
FR2214970A1 (https=) * 1973-01-18 1974-08-19 Westinghouse Electric Corp
FR2222753A1 (https=) * 1973-03-20 1974-10-18 Westinghouse Electric Corp
FR2228300A1 (en) * 1973-05-04 1974-11-29 Westinghouse Electric Corp High speed, high carrier density switching in integrated circuit - involves inclusion of high frequency thyristors and rectifiers
EP0024657A3 (en) * 1979-08-31 1983-05-04 Westinghouse Electric Corporation Thyristor with continuous emitter shunt

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1197205A (en) * 1966-12-13 1970-07-01 Matsushita Electrical Ind Comp Method of Making a Semiconductor Switching Element
US3768151A (en) * 1970-11-03 1973-10-30 Ibm Method of forming ohmic contacts to semiconductors
US3874956A (en) * 1972-05-15 1975-04-01 Mitsubishi Electric Corp Method for making a semiconductor switching device
US3872493A (en) * 1972-08-25 1975-03-18 Westinghouse Electric Corp Selective irradiation of junctioned semiconductor devices
US3790853A (en) * 1973-01-19 1974-02-05 Rca Corp Semiconductor light ray deflector
US3990091A (en) * 1973-04-25 1976-11-02 Westinghouse Electric Corporation Low forward voltage drop thyristor
US4177477A (en) * 1974-03-11 1979-12-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor switching device
US4043837A (en) * 1975-01-10 1977-08-23 Westinghouse Electric Corporation Low forward voltage drop thyristor
US4238761A (en) * 1975-05-27 1980-12-09 Westinghouse Electric Corp. Integrated gate assisted turn-off, amplifying gate thyristor with narrow lipped turn-off diode
US4040170A (en) * 1975-05-27 1977-08-09 Westinghouse Electric Corporation Integrated gate assisted turn-off, amplifying gate thyristor, and a method for making the same
US4134778A (en) * 1977-09-02 1979-01-16 General Electric Company Selective irradiation of thyristors
DE3112940A1 (de) * 1981-03-31 1982-10-07 Siemens AG, 1000 Berlin und 8000 München Thyristor mit anschaltbarer innerer stromverstaerkerung und verfahren zu seinem betrieb
JPH0691244B2 (ja) * 1984-04-27 1994-11-14 三菱電機株式会社 ゲートターンオフサイリスタの製造方法
FR2579024B1 (fr) * 1985-03-12 1987-05-15 Silicium Semiconducteurs Ssc Thyristor de protection sans gachette
EP0303046B1 (de) * 1987-08-11 1992-01-02 BBC Brown Boveri AG Gate-Turn-Off-Thyristor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL249699A (https=) * 1959-04-08
US3272661A (en) * 1962-07-23 1966-09-13 Hitachi Ltd Manufacturing method of a semi-conductor device by controlling the recombination velocity
US3356543A (en) * 1964-12-07 1967-12-05 Rca Corp Method of decreasing the minority carrier lifetime by diffusion
US3341754A (en) * 1966-01-20 1967-09-12 Ion Physics Corp Semiconductor resistor containing interstitial and substitutional ions formed by an ion implantation method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2003347A1 (https=) * 1968-03-06 1969-11-07 Westinghouse Electric Corp
FR2044768A1 (https=) * 1969-05-05 1971-02-26 Gen Electric
FR2214970A1 (https=) * 1973-01-18 1974-08-19 Westinghouse Electric Corp
FR2222753A1 (https=) * 1973-03-20 1974-10-18 Westinghouse Electric Corp
FR2228300A1 (en) * 1973-05-04 1974-11-29 Westinghouse Electric Corp High speed, high carrier density switching in integrated circuit - involves inclusion of high frequency thyristors and rectifiers
EP0024657A3 (en) * 1979-08-31 1983-05-04 Westinghouse Electric Corporation Thyristor with continuous emitter shunt

Also Published As

Publication number Publication date
US3442722A (en) 1969-05-06
FR1461818A (fr) 1966-12-09
NL6515553A (https=) 1966-06-17
BE673770A (https=) 1966-06-15

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