GB1046949A - Bonding method - Google Patents
Bonding methodInfo
- Publication number
- GB1046949A GB1046949A GB4142763A GB4142763A GB1046949A GB 1046949 A GB1046949 A GB 1046949A GB 4142763 A GB4142763 A GB 4142763A GB 4142763 A GB4142763 A GB 4142763A GB 1046949 A GB1046949 A GB 1046949A
- Authority
- GB
- United Kingdom
- Prior art keywords
- junction
- wafer
- lens
- gold
- parts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical group [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 230000005855 radiation Effects 0.000 abstract 2
- 229910005540 GaP Inorganic materials 0.000 abstract 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- XBCSKPOWJATIFC-UHFFFAOYSA-N cobalt iron nickel Chemical compound [Fe][Ni][Fe][Co] XBCSKPOWJATIFC-UHFFFAOYSA-N 0.000 abstract 1
- 230000005496 eutectics Effects 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- FDWREHZXQUYJFJ-UHFFFAOYSA-M gold monochloride Chemical compound [Cl-].[Au+] FDWREHZXQUYJFJ-UHFFFAOYSA-M 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 230000013011 mating Effects 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K11/00—Resistance welding; Severing by resistance heating
- B23K11/16—Resistance welding; Severing by resistance heating taking account of the properties of the material to be welded
- B23K11/20—Resistance welding; Severing by resistance heating taking account of the properties of the material to be welded of different metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
<PICT:1046949/C4-C5/1> A PN junction radiation emitting semi - conductor wafer element 10 is bonded at one optically flat face to a mating optically flat face of a radiation transmissive element, e.g. part-spherical lens 6 centred at the PN junction by pressing the parts together while heated above the eutectic temperature of the material of the lens or wafer and a bonding metal sandwiched between them. The wafer is preferably gallium arsenide and the lens an insulating alloy of 95 parts gallium arsenide and 5 parts gallium phosphide. The bonding metal is in the form of a ring of gold applied by evaporation or from a solution of gold chloride. During or after bonding gold-plated electrodes 9, 10 are attached on opposite sides of the junction, ring 9 being of cobalt-iron-nickel alloy and stub 10 of molybdenum. It is also suggested to bond several emitter diodes and light-responsive diodes to opposite faces of a common parallelsided transparent slab.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB4142763A GB1046949A (en) | 1963-10-21 | 1963-10-21 | Bonding method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB4142763A GB1046949A (en) | 1963-10-21 | 1963-10-21 | Bonding method |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1046949A true GB1046949A (en) | 1966-10-26 |
Family
ID=10419625
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB4142763A Expired GB1046949A (en) | 1963-10-21 | 1963-10-21 | Bonding method |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB1046949A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS472070U (en) * | 1971-01-27 | 1972-08-23 | ||
JPS5380988A (en) * | 1976-12-27 | 1978-07-17 | Nippon Telegr & Teleph Corp <Ntt> | Light emitting diode |
GB2138208A (en) * | 1983-04-08 | 1984-10-17 | Telecommunications Sa | Photovoltaic detector in optical immersion |
-
1963
- 1963-10-21 GB GB4142763A patent/GB1046949A/en not_active Expired
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS472070U (en) * | 1971-01-27 | 1972-08-23 | ||
JPS5130930Y2 (en) * | 1971-01-27 | 1976-08-03 | ||
JPS5380988A (en) * | 1976-12-27 | 1978-07-17 | Nippon Telegr & Teleph Corp <Ntt> | Light emitting diode |
GB2138208A (en) * | 1983-04-08 | 1984-10-17 | Telecommunications Sa | Photovoltaic detector in optical immersion |
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