GB1046157A - Improvements in or relating to the manufacture of semiconductor devices - Google Patents

Improvements in or relating to the manufacture of semiconductor devices

Info

Publication number
GB1046157A
GB1046157A GB8106/65A GB810665A GB1046157A GB 1046157 A GB1046157 A GB 1046157A GB 8106/65 A GB8106/65 A GB 8106/65A GB 810665 A GB810665 A GB 810665A GB 1046157 A GB1046157 A GB 1046157A
Authority
GB
United Kingdom
Prior art keywords
silicon
mixture
gas
evaporates
feb
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8106/65A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens Corp
Original Assignee
Siemens and Halske AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens Corp filed Critical Siemens and Halske AG
Publication of GB1046157A publication Critical patent/GB1046157A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/017—Clean surfaces

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB8106/65A 1964-02-26 1965-02-25 Improvements in or relating to the manufacture of semiconductor devices Expired GB1046157A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0089690 1964-02-26

Publications (1)

Publication Number Publication Date
GB1046157A true GB1046157A (en) 1966-10-19

Family

ID=7515285

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8106/65A Expired GB1046157A (en) 1964-02-26 1965-02-25 Improvements in or relating to the manufacture of semiconductor devices

Country Status (4)

Country Link
US (1) US3506508A (enExample)
FR (1) FR1427316A (enExample)
GB (1) GB1046157A (enExample)
NL (1) NL6501786A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0926713A3 (en) * 1997-12-26 2004-02-25 Canon Kabushiki Kaisha Method and apparatus for etching a semiconductor article and method of preparing a semiconductor article by using the same

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS539712B2 (enExample) * 1972-05-18 1978-04-07
US4123571A (en) * 1977-09-08 1978-10-31 International Business Machines Corporation Method for forming smooth self limiting and pin hole free SiC films on Si
JP2947818B2 (ja) * 1988-07-27 1999-09-13 株式会社日立製作所 微細孔への金属穴埋め方法
AU5977190A (en) * 1989-07-27 1991-01-31 Nishizawa, Junichi Impurity doping method with adsorbed diffusion source
EP0410390A3 (en) * 1989-07-27 1993-02-24 Seiko Instruments Inc. Method of producing semiconductor device
EP0417456A3 (en) * 1989-08-11 1991-07-03 Seiko Instruments Inc. Method of producing semiconductor device
JP2906260B2 (ja) * 1989-12-01 1999-06-14 セイコーインスツルメンツ株式会社 Ｐｎ接合素子の製造方法
CA2031253A1 (en) * 1989-12-01 1991-06-02 Kenji Aoki Method of producing bipolar transistor
JP2928930B2 (ja) * 1989-12-06 1999-08-03 セイコーインスツルメンツ株式会社 不純物ドーピング装置
US5366922A (en) * 1989-12-06 1994-11-22 Seiko Instruments Inc. Method for producing CMOS transistor
EP0505877A2 (en) * 1991-03-27 1992-09-30 Seiko Instruments Inc. Impurity doping method with adsorbed diffusion source
JPH06232141A (ja) * 1992-12-07 1994-08-19 Sony Corp 半導体基板の作成方法及び固体撮像装置の製造方法
US5354698A (en) * 1993-07-19 1994-10-11 Micron Technology, Inc. Hydrogen reduction method for removing contaminants in a semiconductor ion implantation process

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE966879C (de) * 1953-02-21 1957-09-12 Standard Elektrik Ag Verfahren zur Reinigung und/oder Abtragung von Halbleitermaterial, insbesondere von Germanium- und Siliziumsubstanz
NL210216A (enExample) * 1955-12-02
US3328199A (en) * 1960-01-15 1967-06-27 Siemens Ag Method of producing monocrystalline silicon of high purity
US3243323A (en) * 1962-06-11 1966-03-29 Motorola Inc Gas etching

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0926713A3 (en) * 1997-12-26 2004-02-25 Canon Kabushiki Kaisha Method and apparatus for etching a semiconductor article and method of preparing a semiconductor article by using the same

Also Published As

Publication number Publication date
US3506508A (en) 1970-04-14
NL6501786A (enExample) 1965-08-27
FR1427316A (fr) 1966-02-04

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