GB1025179A - Method of crucible-less zone drawing of very pure low-melting substances - Google Patents

Method of crucible-less zone drawing of very pure low-melting substances

Info

Publication number
GB1025179A
GB1025179A GB1440/63A GB144063A GB1025179A GB 1025179 A GB1025179 A GB 1025179A GB 1440/63 A GB1440/63 A GB 1440/63A GB 144063 A GB144063 A GB 144063A GB 1025179 A GB1025179 A GB 1025179A
Authority
GB
United Kingdom
Prior art keywords
gas
molten zone
cooled
stream
crucible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1440/63A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wacker Chemie AG
Original Assignee
Wacker Chemie AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Chemie AG filed Critical Wacker Chemie AG
Publication of GB1025179A publication Critical patent/GB1025179A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

A molten zone is passed upwards through a polycrystalline rod of gallium or indium antimonide, the lower end of the molten zone being cooled by the upward passage of a stream of gas at a temperature of between 0 DEG C. and the b.p. of nitrogen. The gas may be hydrogen, helium, or ammonia. It may be cooled by passage through a gas-washing bottle immersed in a coolant, or by indirect heat-exchange with a liquid coolant. Alternately, it may be obtained by vaporizing a condensed gas. The stream of gas may pass at 100 ml/min. The molten zone may pass at 2 mm/min. According to Fig. 1 (not shown), a molten zone, formed by an induction coil 10, is passed upwards through a rod 2 held between rotary shafts 3 and 4 within a quartz tube 1, the molten zone being cooled by the upward passage of a stream of hydrogen which is itself cooled by liquid air in a jacket 5.
GB1440/63A 1962-01-24 1963-01-11 Method of crucible-less zone drawing of very pure low-melting substances Expired GB1025179A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEW31541A DE1233827B (en) 1962-01-24 1962-01-24 Process for crucible-free zone melting of low-melting pure substances

Publications (1)

Publication Number Publication Date
GB1025179A true GB1025179A (en) 1966-04-06

Family

ID=7599800

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1440/63A Expired GB1025179A (en) 1962-01-24 1963-01-11 Method of crucible-less zone drawing of very pure low-melting substances

Country Status (5)

Country Link
US (1) US3157537A (en)
BE (1) BE627461A (en)
DE (1) DE1233827B (en)
GB (1) GB1025179A (en)
NL (1) NL287222A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3498851A (en) * 1964-12-17 1970-03-03 Nippon Musical Instruments Mfg Method for producing an anisotropic permanent magnet material
US3660062A (en) * 1968-02-29 1972-05-02 Siemens Ag Method for crucible-free floating zone melting a crystalline rod, especially of semi-crystalline material

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3060123A (en) * 1952-12-17 1962-10-23 Bell Telephone Labor Inc Method of processing semiconductive materials
GB844813A (en) * 1957-05-01 1960-08-17 Sylvania Electric Prod Zone melting apparatus
US2966341A (en) * 1958-05-14 1960-12-27 Friedrich H Reder Nitrogen traps for molecular resonance devices
US2985519A (en) * 1958-06-02 1961-05-23 Du Pont Production of silicon
US3023091A (en) * 1959-03-02 1962-02-27 Raytheon Co Methods of heating and levitating molten material
US3060065A (en) * 1959-08-06 1962-10-23 Theodore H Orem Method for the growth of preferentially oriented single crystals of metals

Also Published As

Publication number Publication date
DE1233827B (en) 1967-02-09
BE627461A (en)
NL287222A (en)
US3157537A (en) 1964-11-17

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