GB0816788D0 - Package method and structure for a light emitting diode multi-layer - Google Patents

Package method and structure for a light emitting diode multi-layer

Info

Publication number
GB0816788D0
GB0816788D0 GBGB0816788.4A GB0816788A GB0816788D0 GB 0816788 D0 GB0816788 D0 GB 0816788D0 GB 0816788 A GB0816788 A GB 0816788A GB 0816788 D0 GB0816788 D0 GB 0816788D0
Authority
GB
United Kingdom
Prior art keywords
fabricating
silica gel
layer
frame
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GBGB0816788.4A
Other versions
GB2455843A (en
GB2455843B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
iLEDm Photoelectronics Inc
Original Assignee
iLEDm Photoelectronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by iLEDm Photoelectronics Inc filed Critical iLEDm Photoelectronics Inc
Publication of GB0816788D0 publication Critical patent/GB0816788D0/en
Publication of GB2455843A publication Critical patent/GB2455843A/en
Application granted granted Critical
Publication of GB2455843B publication Critical patent/GB2455843B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21YINDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2101/00Point-like light sources
    • F21Y2101/02
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3025Electromagnetic shielding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/56Materials, e.g. epoxy or silicone resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements

Abstract

A package method and structure for a light emitting diode multi-layer module, wherein the method comprises the steps of: fabricating a printed circuit layer with a plurality of staggered nodes on a substrate; fabricating a frame around the substrate; fabricating a protruding inclined pier around the bottom rim of the inner wall of the frame; fabricating a plurality of convex reflecting microstructure points on the surface of the printed circuit layer; positioning chips and wire bonding; spraying reflecting paint on the surface of the substrate and the inner wall of the frame except the chips; filling a silica gel diffusion layer formed by mixing the silica gel and the diffusion powder into the frame; and evenly coating a fluorescent glue layer formed by evenly mixing another silica gel and fluorescent powder on the silica gel diffusion layer.
GB0816788A 2007-12-19 2008-09-15 Package method and structure for a light emitting diode multi-layer Expired - Fee Related GB2455843B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW096148811A TW200929513A (en) 2007-12-19 2007-12-19 Method for packaging a light emitting diode and its structure

Publications (3)

Publication Number Publication Date
GB0816788D0 true GB0816788D0 (en) 2008-10-22
GB2455843A GB2455843A (en) 2009-06-24
GB2455843B GB2455843B (en) 2010-03-31

Family

ID=39930123

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0816788A Expired - Fee Related GB2455843B (en) 2007-12-19 2008-09-15 Package method and structure for a light emitting diode multi-layer

Country Status (3)

Country Link
DE (1) DE102008042511A1 (en)
GB (1) GB2455843B (en)
TW (1) TW200929513A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102818151A (en) * 2012-07-23 2012-12-12 贵州光浦森光电有限公司 Universal type LED (light emitting diode) bulb forming method and LED bulb with fluorescent inner cover

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102147061A (en) * 2010-02-09 2011-08-10 刘世全 Modular integrally-luminous LED planar light source fluorescent lamp and manufacturing method thereof
CN102278611A (en) * 2010-06-09 2011-12-14 福建富顺电子有限公司 Lamp tube
CN102345809A (en) * 2010-08-03 2012-02-08 艾笛森光电股份有限公司 Illumination system
CN102374409B (en) * 2010-08-24 2013-05-15 亚世达科技股份有限公司 Tube device with light-emitting diode light source
CN102374434A (en) * 2011-10-11 2012-03-14 山水照明科技(常熟)有限公司 LED (light-emitting diode) fluorescent lamp tube
CN104347461A (en) * 2013-08-07 2015-02-11 方晶科技股份有限公司 Heat transfer device for LED (Light-Emitting Diode)
CN108332174B (en) * 2018-02-07 2019-12-24 武汉大学 Heat dissipation system and method applied to light emitting surface of high-power LED lighting equipment

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6381873A (en) * 1986-09-26 1988-04-12 Toshiba Corp Light emitting device
TWM271252U (en) * 2004-12-14 2005-07-21 Niching Ind Corp Package structure of light-emitting device
JP4535928B2 (en) * 2005-04-28 2010-09-01 シャープ株式会社 Semiconductor light emitting device
KR100616695B1 (en) * 2005-10-04 2006-08-28 삼성전기주식회사 High power light emitting diode package
JP2007242856A (en) * 2006-03-08 2007-09-20 Rohm Co Ltd Chip-type semiconductor light emitting device
KR100809210B1 (en) * 2006-07-10 2008-02-29 삼성전기주식회사 High power light emitting diode package and method of producing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102818151A (en) * 2012-07-23 2012-12-12 贵州光浦森光电有限公司 Universal type LED (light emitting diode) bulb forming method and LED bulb with fluorescent inner cover

Also Published As

Publication number Publication date
GB2455843A (en) 2009-06-24
GB2455843B (en) 2010-03-31
TW200929513A (en) 2009-07-01
DE102008042511A1 (en) 2009-07-16

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20130915