GB0816788D0 - Package method and structure for a light emitting diode multi-layer - Google Patents
Package method and structure for a light emitting diode multi-layerInfo
- Publication number
- GB0816788D0 GB0816788D0 GBGB0816788.4A GB0816788A GB0816788D0 GB 0816788 D0 GB0816788 D0 GB 0816788D0 GB 0816788 A GB0816788 A GB 0816788A GB 0816788 D0 GB0816788 D0 GB 0816788D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- fabricating
- silica gel
- layer
- frame
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2101/00—Point-like light sources
-
- F21Y2101/02—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Abstract
A package method and structure for a light emitting diode multi-layer module, wherein the method comprises the steps of: fabricating a printed circuit layer with a plurality of staggered nodes on a substrate; fabricating a frame around the substrate; fabricating a protruding inclined pier around the bottom rim of the inner wall of the frame; fabricating a plurality of convex reflecting microstructure points on the surface of the printed circuit layer; positioning chips and wire bonding; spraying reflecting paint on the surface of the substrate and the inner wall of the frame except the chips; filling a silica gel diffusion layer formed by mixing the silica gel and the diffusion powder into the frame; and evenly coating a fluorescent glue layer formed by evenly mixing another silica gel and fluorescent powder on the silica gel diffusion layer.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW096148811A TW200929513A (en) | 2007-12-19 | 2007-12-19 | Method for packaging a light emitting diode and its structure |
Publications (3)
Publication Number | Publication Date |
---|---|
GB0816788D0 true GB0816788D0 (en) | 2008-10-22 |
GB2455843A GB2455843A (en) | 2009-06-24 |
GB2455843B GB2455843B (en) | 2010-03-31 |
Family
ID=39930123
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB0816788A Expired - Fee Related GB2455843B (en) | 2007-12-19 | 2008-09-15 | Package method and structure for a light emitting diode multi-layer |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE102008042511A1 (en) |
GB (1) | GB2455843B (en) |
TW (1) | TW200929513A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102818151A (en) * | 2012-07-23 | 2012-12-12 | 贵州光浦森光电有限公司 | Universal type LED (light emitting diode) bulb forming method and LED bulb with fluorescent inner cover |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102147061A (en) * | 2010-02-09 | 2011-08-10 | 刘世全 | Modular integrally-luminous LED planar light source fluorescent lamp and manufacturing method thereof |
CN102278611A (en) * | 2010-06-09 | 2011-12-14 | 福建富顺电子有限公司 | Lamp tube |
CN102345809A (en) * | 2010-08-03 | 2012-02-08 | 艾笛森光电股份有限公司 | Illumination system |
CN102374409B (en) * | 2010-08-24 | 2013-05-15 | 亚世达科技股份有限公司 | Tube device with light-emitting diode light source |
CN102374434A (en) * | 2011-10-11 | 2012-03-14 | 山水照明科技(常熟)有限公司 | LED (light-emitting diode) fluorescent lamp tube |
CN104347461A (en) * | 2013-08-07 | 2015-02-11 | 方晶科技股份有限公司 | Heat transfer device for LED (Light-Emitting Diode) |
CN108332174B (en) * | 2018-02-07 | 2019-12-24 | 武汉大学 | Heat dissipation system and method applied to light emitting surface of high-power LED lighting equipment |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6381873A (en) * | 1986-09-26 | 1988-04-12 | Toshiba Corp | Light emitting device |
TWM271252U (en) * | 2004-12-14 | 2005-07-21 | Niching Ind Corp | Package structure of light-emitting device |
JP4535928B2 (en) * | 2005-04-28 | 2010-09-01 | シャープ株式会社 | Semiconductor light emitting device |
KR100616695B1 (en) * | 2005-10-04 | 2006-08-28 | 삼성전기주식회사 | High power light emitting diode package |
JP2007242856A (en) * | 2006-03-08 | 2007-09-20 | Rohm Co Ltd | Chip-type semiconductor light emitting device |
KR100809210B1 (en) * | 2006-07-10 | 2008-02-29 | 삼성전기주식회사 | High power light emitting diode package and method of producing the same |
-
2007
- 2007-12-19 TW TW096148811A patent/TW200929513A/en unknown
-
2008
- 2008-09-15 GB GB0816788A patent/GB2455843B/en not_active Expired - Fee Related
- 2008-09-30 DE DE102008042511A patent/DE102008042511A1/en not_active Withdrawn
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102818151A (en) * | 2012-07-23 | 2012-12-12 | 贵州光浦森光电有限公司 | Universal type LED (light emitting diode) bulb forming method and LED bulb with fluorescent inner cover |
Also Published As
Publication number | Publication date |
---|---|
GB2455843A (en) | 2009-06-24 |
GB2455843B (en) | 2010-03-31 |
TW200929513A (en) | 2009-07-01 |
DE102008042511A1 (en) | 2009-07-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20130915 |