FR66334E - Dispositifs amplificateurs utilisant des semi-conducteurs ou des cristaux - Google Patents

Dispositifs amplificateurs utilisant des semi-conducteurs ou des cristaux

Info

Publication number
FR66334E
FR66334E FR66334DA FR66334E FR 66334 E FR66334 E FR 66334E FR 66334D A FR66334D A FR 66334DA FR 66334 E FR66334 E FR 66334E
Authority
FR
France
Prior art keywords
semiconductors
crystals
amplifier devices
amplifier
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Inventor
Karl Seiler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Standard Electric Corp
Original Assignee
International Standard Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Standard Electric Corp filed Critical International Standard Electric Corp
Application granted granted Critical
Publication of FR66334E publication Critical patent/FR66334E/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/313—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
FR66334D 1953-02-21 1954-02-19 Dispositifs amplificateurs utilisant des semi-conducteurs ou des cristaux Expired FR66334E (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES32280A DE966879C (de) 1953-02-21 1953-02-21 Verfahren zur Reinigung und/oder Abtragung von Halbleitermaterial, insbesondere von Germanium- und Siliziumsubstanz

Publications (1)

Publication Number Publication Date
FR66334E true FR66334E (fr) 1956-06-29

Family

ID=7480799

Family Applications (1)

Application Number Title Priority Date Filing Date
FR66334D Expired FR66334E (fr) 1953-02-21 1954-02-19 Dispositifs amplificateurs utilisant des semi-conducteurs ou des cristaux

Country Status (5)

Country Link
US (1) US2744000A (fr)
DE (1) DE966879C (fr)
FR (1) FR66334E (fr)
GB (1) GB754456A (fr)
NL (1) NL100619C (fr)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL123477C (fr) * 1958-05-16
US3012921A (en) * 1958-08-20 1961-12-12 Philco Corp Controlled jet etching of semiconductor units
US3102061A (en) * 1960-01-05 1963-08-27 Texas Instruments Inc Method for thermally etching silicon surfaces
US3075903A (en) * 1960-02-23 1963-01-29 Motorola Inc Method of electrolytically etching a semiconductor element
US3151008A (en) * 1960-09-23 1964-09-29 Sprague Electric Co Method of forming a p-nu junction
NL279119A (fr) * 1961-06-01
FR1303635A (fr) * 1961-08-04 1962-09-14 Csf Procédé de fabrication de dispositifs à semi-conducteur
DE1202616B (de) * 1962-02-23 1965-10-07 Siemens Ag Verfahren zum Entfernen der bei der Epitaxie auf dem Heizer abgeschiedenen Halbleiterschicht
BE633796A (fr) * 1962-06-19
US3274036A (en) * 1962-08-02 1966-09-20 United Aircraft Corp Arc etching
US3258359A (en) * 1963-04-08 1966-06-28 Siliconix Inc Semiconductor etch and oxidation process
US3236707A (en) * 1963-05-24 1966-02-22 Sperry Rand Corp Electrical circuitry and method
DE1521956C2 (de) * 1963-07-17 1970-09-17 Siemens AG, 1000 Berlin u. 8000 München Verfahren zum Herstellen reiner Oberflächen von Halbleiterkörpern mit Hilfe eines halogenwasserstoffhaltigen Gasgemisches
NL6501786A (fr) * 1964-02-26 1965-08-27
DE1514683B1 (de) * 1966-02-12 1970-04-02 Siemens Ag Verfahren zum Erzeugen von elektrischen Nebenschluessen zum UEberbruecken von pn-UEbergaengen in Halbleiterkoerpern
US4007297A (en) * 1971-09-20 1977-02-08 Rca Corporation Method of treating semiconductor device to improve its electrical characteristics
US4243865A (en) * 1976-05-14 1981-01-06 Data General Corporation Process for treating material in plasma environment
US4116714A (en) * 1977-08-15 1978-09-26 International Business Machines Corporation Post-polishing semiconductor surface cleaning process
DE3128979C2 (de) * 1981-07-22 1986-10-23 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von für Solarzellen verwendbarem Silizium
US4889589A (en) * 1986-06-26 1989-12-26 United Technologies Corporation Gaseous removal of ceramic coatings

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2121603A (en) * 1936-05-30 1938-06-21 Westinghouse Electric & Mfg Co Method of producing selenium rectifiers
BE466775A (fr) * 1941-05-28
BE471989A (fr) * 1941-07-16
US2362545A (en) * 1942-01-29 1944-11-14 Bell Telephone Labor Inc Selenium rectifier and method of making it
US2395743A (en) * 1942-12-22 1946-02-26 Bell Telephone Labor Inc Method of making dry rectifiers
DE823470C (de) * 1950-09-12 1951-12-03 Siemens Ag Verfahren zum AEtzen eines Halbleiters

Also Published As

Publication number Publication date
DE966879C (de) 1957-09-12
GB754456A (en) 1956-08-08
US2744000A (en) 1956-05-01
NL100619C (fr) 1961-10-16

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