NL100619C - - Google Patents
Info
- Publication number
- NL100619C NL100619C NL185177A NL185177A NL100619C NL 100619 C NL100619 C NL 100619C NL 185177 A NL185177 A NL 185177A NL 185177 A NL185177 A NL 185177A NL 100619 C NL100619 C NL 100619C
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/313—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES32280A DE966879C (de) | 1953-02-21 | 1953-02-21 | Verfahren zur Reinigung und/oder Abtragung von Halbleitermaterial, insbesondere von Germanium- und Siliziumsubstanz |
Publications (1)
Publication Number | Publication Date |
---|---|
NL100619C true NL100619C (xx) | 1961-10-16 |
Family
ID=7480799
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL185177A NL100619C (xx) | 1953-02-21 | 1954-02-17 |
Country Status (5)
Country | Link |
---|---|
US (1) | US2744000A (xx) |
DE (1) | DE966879C (xx) |
FR (1) | FR66334E (xx) |
GB (1) | GB754456A (xx) |
NL (1) | NL100619C (xx) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL123477C (xx) * | 1958-05-16 | |||
US3012921A (en) * | 1958-08-20 | 1961-12-12 | Philco Corp | Controlled jet etching of semiconductor units |
US3102061A (en) * | 1960-01-05 | 1963-08-27 | Texas Instruments Inc | Method for thermally etching silicon surfaces |
US3075903A (en) * | 1960-02-23 | 1963-01-29 | Motorola Inc | Method of electrolytically etching a semiconductor element |
US3151008A (en) * | 1960-09-23 | 1964-09-29 | Sprague Electric Co | Method of forming a p-nu junction |
NL279119A (xx) * | 1961-06-01 | |||
FR1303635A (fr) * | 1961-08-04 | 1962-09-14 | Csf | Procédé de fabrication de dispositifs à semi-conducteur |
DE1202616B (de) * | 1962-02-23 | 1965-10-07 | Siemens Ag | Verfahren zum Entfernen der bei der Epitaxie auf dem Heizer abgeschiedenen Halbleiterschicht |
BE633796A (xx) * | 1962-06-19 | |||
US3274036A (en) * | 1962-08-02 | 1966-09-20 | United Aircraft Corp | Arc etching |
US3258359A (en) * | 1963-04-08 | 1966-06-28 | Siliconix Inc | Semiconductor etch and oxidation process |
US3236707A (en) * | 1963-05-24 | 1966-02-22 | Sperry Rand Corp | Electrical circuitry and method |
DE1521956C2 (de) * | 1963-07-17 | 1970-09-17 | Siemens AG, 1000 Berlin u. 8000 München | Verfahren zum Herstellen reiner Oberflächen von Halbleiterkörpern mit Hilfe eines halogenwasserstoffhaltigen Gasgemisches |
NL6501786A (xx) * | 1964-02-26 | 1965-08-27 | ||
DE1514683B1 (de) * | 1966-02-12 | 1970-04-02 | Siemens Ag | Verfahren zum Erzeugen von elektrischen Nebenschluessen zum UEberbruecken von pn-UEbergaengen in Halbleiterkoerpern |
US4007297A (en) * | 1971-09-20 | 1977-02-08 | Rca Corporation | Method of treating semiconductor device to improve its electrical characteristics |
US4243865A (en) * | 1976-05-14 | 1981-01-06 | Data General Corporation | Process for treating material in plasma environment |
US4116714A (en) * | 1977-08-15 | 1978-09-26 | International Business Machines Corporation | Post-polishing semiconductor surface cleaning process |
DE3128979C2 (de) * | 1981-07-22 | 1986-10-23 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Herstellen von für Solarzellen verwendbarem Silizium |
US4889589A (en) * | 1986-06-26 | 1989-12-26 | United Technologies Corporation | Gaseous removal of ceramic coatings |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2121603A (en) * | 1936-05-30 | 1938-06-21 | Westinghouse Electric & Mfg Co | Method of producing selenium rectifiers |
BE466716A (xx) * | 1941-05-28 | |||
BE471989A (xx) * | 1941-07-16 | |||
US2362545A (en) * | 1942-01-29 | 1944-11-14 | Bell Telephone Labor Inc | Selenium rectifier and method of making it |
US2395743A (en) * | 1942-12-22 | 1946-02-26 | Bell Telephone Labor Inc | Method of making dry rectifiers |
DE823470C (de) * | 1950-09-12 | 1951-12-03 | Siemens Ag | Verfahren zum AEtzen eines Halbleiters |
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1953
- 1953-02-21 DE DES32280A patent/DE966879C/de not_active Expired
-
1954
- 1954-02-12 GB GB4196/54A patent/GB754456A/en not_active Expired
- 1954-02-17 NL NL185177A patent/NL100619C/xx active
- 1954-02-19 US US411538A patent/US2744000A/en not_active Expired - Lifetime
- 1954-02-19 FR FR66334D patent/FR66334E/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB754456A (en) | 1956-08-08 |
US2744000A (en) | 1956-05-01 |
FR66334E (fr) | 1956-06-29 |
DE966879C (de) | 1957-09-12 |