FR3134238B1 - Substrat piézoélectrique sur isolant (POI) et procédé de fabrication d’un substrat piézoélectrique sur isolant (POI) - Google Patents

Substrat piézoélectrique sur isolant (POI) et procédé de fabrication d’un substrat piézoélectrique sur isolant (POI) Download PDF

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Publication number
FR3134238B1
FR3134238B1 FR2202900A FR2202900A FR3134238B1 FR 3134238 B1 FR3134238 B1 FR 3134238B1 FR 2202900 A FR2202900 A FR 2202900A FR 2202900 A FR2202900 A FR 2202900A FR 3134238 B1 FR3134238 B1 FR 3134238B1
Authority
FR
France
Prior art keywords
substrate
piezoelectric
poi
insulator
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR2202900A
Other languages
English (en)
French (fr)
Other versions
FR3134238A1 (fr
Inventor
Raphael Caulmilone
Isabelle Bertrand
Frédéric Allibert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR2202900A priority Critical patent/FR3134238B1/fr
Application filed by Soitec SA filed Critical Soitec SA
Priority to PCT/EP2023/058282 priority patent/WO2023187050A1/fr
Priority to CN202380039083.2A priority patent/CN119173996A/zh
Priority to EP23715527.0A priority patent/EP4500583A1/fr
Priority to JP2024557703A priority patent/JP2025511052A/ja
Priority to KR1020247035694A priority patent/KR20240169041A/ko
Priority to US18/852,209 priority patent/US20250211199A1/en
Priority to TW112112149A priority patent/TW202404134A/zh
Publication of FR3134238A1 publication Critical patent/FR3134238A1/fr
Application granted granted Critical
Publication of FR3134238B1 publication Critical patent/FR3134238B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
    • H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02952—Means for compensation or elimination of undesirable effects of parasitic capacitance
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H10N30/073—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
FR2202900A 2022-03-30 2022-03-30 Substrat piézoélectrique sur isolant (POI) et procédé de fabrication d’un substrat piézoélectrique sur isolant (POI) Active FR3134238B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR2202900A FR3134238B1 (fr) 2022-03-30 2022-03-30 Substrat piézoélectrique sur isolant (POI) et procédé de fabrication d’un substrat piézoélectrique sur isolant (POI)
CN202380039083.2A CN119173996A (zh) 2022-03-30 2023-03-30 绝缘体上压电（poi）衬底及生产绝缘体上压电（poi）衬底的方法
EP23715527.0A EP4500583A1 (fr) 2022-03-30 2023-03-30 Substrat piézoélectrique sur isolant (poi) et procédé de fabrication d'un substrat piézoélectrique sur isolant (poi)
JP2024557703A JP2025511052A (ja) 2022-03-30 2023-03-30 ピエゾエレクトリックオンインシュレータ（ｐｏｉ）基板およびピエゾエレクトリックオンインシュレータ（ｐｏｉ）基板を製造するための方法
PCT/EP2023/058282 WO2023187050A1 (fr) 2022-03-30 2023-03-30 Substrat piézoélectrique sur isolant (poi) et procédé de fabrication d'un substrat piézoélectrique sur isolant (poi)
KR1020247035694A KR20240169041A (ko) 2022-03-30 2023-03-30 절연체상 압전(poi) 기판 및 절연체상 압전(poi) 기판 생성 방법
US18/852,209 US20250211199A1 (en) 2022-03-30 2023-03-30 Piezoelectric-on-insulator (poi) substrate and method for producing a piezoelectric-on-insulator (poi) substrate
TW112112149A TW202404134A (zh) 2022-03-30 2023-03-30 壓電絕緣體（ｐｏｉ）基板及製造壓電絕緣體基板之方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2202900A FR3134238B1 (fr) 2022-03-30 2022-03-30 Substrat piézoélectrique sur isolant (POI) et procédé de fabrication d’un substrat piézoélectrique sur isolant (POI)
FR2202900 2022-03-30

Publications (2)

Publication Number Publication Date
FR3134238A1 FR3134238A1 (fr) 2023-10-06
FR3134238B1 true FR3134238B1 (fr) 2024-08-23

Family

ID=82385323

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2202900A Active FR3134238B1 (fr) 2022-03-30 2022-03-30 Substrat piézoélectrique sur isolant (POI) et procédé de fabrication d’un substrat piézoélectrique sur isolant (POI)

Country Status (8)

Country Link
US (1) US20250211199A1 (https=)
EP (1) EP4500583A1 (https=)
JP (1) JP2025511052A (https=)
KR (1) KR20240169041A (https=)
CN (1) CN119173996A (https=)
FR (1) FR3134238B1 (https=)
TW (1) TW202404134A (https=)
WO (1) WO2023187050A1 (https=)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9768056B2 (en) * 2013-10-31 2017-09-19 Sunedison Semiconductor Limited (Uen201334164H) Method of manufacturing high resistivity SOI wafers with charge trapping layers based on terminated Si deposition
FR3053532B1 (fr) * 2016-06-30 2018-11-16 Soitec Structure hybride pour dispositif a ondes acoustiques de surface

Also Published As

Publication number Publication date
US20250211199A1 (en) 2025-06-26
JP2025511052A (ja) 2025-04-15
TW202404134A (zh) 2024-01-16
FR3134238A1 (fr) 2023-10-06
WO2023187050A1 (fr) 2023-10-05
KR20240169041A (ko) 2024-12-02
CN119173996A (zh) 2024-12-20
EP4500583A1 (fr) 2025-02-05

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