FR3123149B1 - Dispositif optoélectronique, générateur de photons uniques, mémoire, multiplexeur, implant et procédé associés - Google Patents

Dispositif optoélectronique, générateur de photons uniques, mémoire, multiplexeur, implant et procédé associés Download PDF

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Publication number
FR3123149B1
FR3123149B1 FR2105172A FR2105172A FR3123149B1 FR 3123149 B1 FR3123149 B1 FR 3123149B1 FR 2105172 A FR2105172 A FR 2105172A FR 2105172 A FR2105172 A FR 2105172A FR 3123149 B1 FR3123149 B1 FR 3123149B1
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FR
France
Prior art keywords
multiplexer
implant
memory
single photon
associated method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR2105172A
Other languages
English (en)
Other versions
FR3123149A1 (fr
Inventor
Julien Pernot
Cédric Masante
Nicolas Rouger
Martin Kah
Clément Hébert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Institut National Polytechnique de Toulouse INPT
Institut Polytechnique de Grenoble
Institut National de la Sante et de la Recherche Medicale INSERM
Universite Toulouse III Paul Sabatier
Universite Grenoble Alpes
Original Assignee
Centre National de la Recherche Scientifique CNRS
Institut National Polytechnique de Toulouse INPT
Commissariat a lEnergie Atomique CEA
Institut Polytechnique de Grenoble
Institut National de la Sante et de la Recherche Medicale INSERM
Universite Toulouse III Paul Sabatier
Universite Grenoble Alpes
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS, Institut National Polytechnique de Toulouse INPT, Commissariat a lEnergie Atomique CEA, Institut Polytechnique de Grenoble, Institut National de la Sante et de la Recherche Medicale INSERM, Universite Toulouse III Paul Sabatier, Universite Grenoble Alpes, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Centre National de la Recherche Scientifique CNRS
Priority to FR2105172A priority Critical patent/FR3123149B1/fr
Priority to JP2023571686A priority patent/JP2024519876A/ja
Priority to CN202280036200.5A priority patent/CN117751451A/zh
Priority to EP22730400.3A priority patent/EP4341996A1/fr
Priority to PCT/EP2022/063421 priority patent/WO2022243364A1/fr
Publication of FR3123149A1 publication Critical patent/FR3123149A1/fr
Application granted granted Critical
Publication of FR3123149B1 publication Critical patent/FR3123149B1/fr
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0041—Devices characterised by their operation characterised by field-effect operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Electronic Switches (AREA)
  • Semiconductor Memories (AREA)
  • Electroluminescent Light Sources (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

Dispositif optoélectronique, générateur de photons uniques, mémoire, multiplexeur, implant et procédé associés L’invention concerne un dispositif (10) comportant une première portion (15), une deuxième portion (20), un premier contact (25) et un deuxième contact (30), la première portion (15) étant réalisée en un semi-conducteur présentant un premier dopage, la deuxième portion (20) étant en un semi-conducteur présentant un deuxième dopage différent du premier, la première portion (15) et la deuxième portion (20) formant une jonction p/n comportant une zone de déplétion (70) dans la première portion (15), les contacts (25, 30) étant configurés pour que, lorsqu’une tension électrique (V1) est appliquée entre les contacts (25, 30), une dimension de la zone de déplétion (70) dépend d’une valeur de la tension électrique, une énergie d’ionisation étant définie pour des dopants de la deuxième portion (20). Le dispositif (10) comporte un émetteur (40) générant un rayonnement présentant une énergie supérieure à l’énergie d’ionisation et illuminant la deuxième portion (20) avec le rayonnement. Figure pour l'abrégé : 1
FR2105172A 2021-05-18 2021-05-18 Dispositif optoélectronique, générateur de photons uniques, mémoire, multiplexeur, implant et procédé associés Active FR3123149B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR2105172A FR3123149B1 (fr) 2021-05-18 2021-05-18 Dispositif optoélectronique, générateur de photons uniques, mémoire, multiplexeur, implant et procédé associés
JP2023571686A JP2024519876A (ja) 2021-05-18 2022-05-18 光電子デバイス、単一光子生成器、メモリ、マルチプレクサ、インプラント、および関連する方法
CN202280036200.5A CN117751451A (zh) 2021-05-18 2022-05-18 用于生成单光子的光电器件、相关存储器、复用器、植入物和方法
EP22730400.3A EP4341996A1 (fr) 2021-05-18 2022-05-18 Dispositif optoélectronique, générateur de photons uniques, mémoire, multiplexeur, implant et procédé associés
PCT/EP2022/063421 WO2022243364A1 (fr) 2021-05-18 2022-05-18 Dispositif optoélectronique, générateur de photons uniques, mémoire, multiplexeur, implant et procédé associés

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2105172 2021-05-18
FR2105172A FR3123149B1 (fr) 2021-05-18 2021-05-18 Dispositif optoélectronique, générateur de photons uniques, mémoire, multiplexeur, implant et procédé associés

Publications (2)

Publication Number Publication Date
FR3123149A1 FR3123149A1 (fr) 2022-11-25
FR3123149B1 true FR3123149B1 (fr) 2023-12-15

Family

ID=78770659

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2105172A Active FR3123149B1 (fr) 2021-05-18 2021-05-18 Dispositif optoélectronique, générateur de photons uniques, mémoire, multiplexeur, implant et procédé associés

Country Status (5)

Country Link
EP (1) EP4341996A1 (fr)
JP (1) JP2024519876A (fr)
CN (1) CN117751451A (fr)
FR (1) FR3123149B1 (fr)
WO (1) WO2022243364A1 (fr)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008198731A (ja) * 2007-02-09 2008-08-28 Toshiba Corp 半導体装置
JP5655654B2 (ja) * 2011-03-18 2015-01-21 富士通株式会社 増幅装置
FR3026631B1 (fr) * 2014-10-03 2016-12-09 Ecole Polytech Dispositif medical implantable muni de capteurs
WO2016203354A1 (fr) * 2015-06-19 2016-12-22 Semiconductor Energy Laboratory Co., Ltd. Dispositif semi-conducteur, procédé de fabrication de celui-ci et dispositif électronique

Also Published As

Publication number Publication date
WO2022243364A1 (fr) 2022-11-24
FR3123149A1 (fr) 2022-11-25
CN117751451A (zh) 2024-03-22
EP4341996A1 (fr) 2024-03-27
JP2024519876A (ja) 2024-05-21

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