FR3089086B1 - Dispositif imageur intégré avec une capacité de stockage des charges améliorée - Google Patents

Dispositif imageur intégré avec une capacité de stockage des charges améliorée Download PDF

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Publication number
FR3089086B1
FR3089086B1 FR1871689A FR1871689A FR3089086B1 FR 3089086 B1 FR3089086 B1 FR 3089086B1 FR 1871689 A FR1871689 A FR 1871689A FR 1871689 A FR1871689 A FR 1871689A FR 3089086 B1 FR3089086 B1 FR 3089086B1
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FR
France
Prior art keywords
imaging device
storage capacity
charge storage
integrated imaging
improved charge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1871689A
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English (en)
Other versions
FR3089086A1 (fr
Inventor
Andrej Suler
François Roy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Crolles 2 SAS
Original Assignee
STMicroelectronics Crolles 2 SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Crolles 2 SAS filed Critical STMicroelectronics Crolles 2 SAS
Priority to FR1871689A priority Critical patent/FR3089086B1/fr
Priority to US16/681,161 priority patent/US20200168646A1/en
Priority to CN201922032196.3U priority patent/CN211404502U/zh
Priority to CN201911147619.4A priority patent/CN111211139A/zh
Publication of FR3089086A1 publication Critical patent/FR3089086A1/fr
Application granted granted Critical
Publication of FR3089086B1 publication Critical patent/FR3089086B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H01L27/14614—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor having a special gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

Dispositif imageur intégré comportant au moins un pixel (PX) comprenant au moins une tranchée s’étendant dans le substrat (SB), ladite au moins une tranchée étant tapissée d’un matériau isolant (1) et comprenant un empilement d’une première région de poly-silicium (P1) et d’au moins une deuxième région de poly-silicium (P2) séparées par une couche dudit matériau isolant (1) Figure pour l’abrégé : Fig. 2
FR1871689A 2018-11-22 2018-11-22 Dispositif imageur intégré avec une capacité de stockage des charges améliorée Active FR3089086B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1871689A FR3089086B1 (fr) 2018-11-22 2018-11-22 Dispositif imageur intégré avec une capacité de stockage des charges améliorée
US16/681,161 US20200168646A1 (en) 2018-11-22 2019-11-12 Integrated imaging device with an improved charge storage capacity
CN201922032196.3U CN211404502U (zh) 2018-11-22 2019-11-21 集成成像设备和集成电路
CN201911147619.4A CN111211139A (zh) 2018-11-22 2019-11-21 具有改进的电荷存储容量的集成成像设备

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1871689A FR3089086B1 (fr) 2018-11-22 2018-11-22 Dispositif imageur intégré avec une capacité de stockage des charges améliorée
FR1871689 2018-11-22

Publications (2)

Publication Number Publication Date
FR3089086A1 FR3089086A1 (fr) 2020-05-29
FR3089086B1 true FR3089086B1 (fr) 2021-09-24

Family

ID=66166141

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1871689A Active FR3089086B1 (fr) 2018-11-22 2018-11-22 Dispositif imageur intégré avec une capacité de stockage des charges améliorée

Country Status (3)

Country Link
US (1) US20200168646A1 (fr)
CN (2) CN211404502U (fr)
FR (1) FR3089086B1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3089086B1 (fr) * 2018-11-22 2021-09-24 St Microelectronics Crolles 2 Sas Dispositif imageur intégré avec une capacité de stockage des charges améliorée
KR102611171B1 (ko) * 2018-12-28 2023-12-08 에스케이하이닉스 주식회사 수직 판형 캐패시터 및 이를 포함하는 이미지 센싱 장치
FR3098988B1 (fr) 2019-07-19 2022-08-26 St Microelectronics Crolles 2 Sas Capteur d'image
CN116829053A (zh) * 2020-12-30 2023-09-29 耐克创新有限合伙公司 最小化电粘附剂致动器中的体电荷

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011159756A (ja) * 2010-01-29 2011-08-18 Sony Corp 固体撮像装置とその製造方法、及び電子機器
CN103377939B (zh) * 2012-04-25 2016-01-06 帅群微电子股份有限公司 沟槽式功率半导体结构的制造方法
KR102456530B1 (ko) * 2015-09-09 2022-10-20 삼성전자주식회사 이미지 센서
CN108231810B (zh) * 2017-12-27 2020-06-30 上海集成电路研发中心有限公司 一种增加悬浮漏极电容的像素单元结构及制作方法
FR3089086B1 (fr) * 2018-11-22 2021-09-24 St Microelectronics Crolles 2 Sas Dispositif imageur intégré avec une capacité de stockage des charges améliorée

Also Published As

Publication number Publication date
FR3089086A1 (fr) 2020-05-29
CN211404502U (zh) 2020-09-01
CN111211139A (zh) 2020-05-29
US20200168646A1 (en) 2020-05-28

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