FR3078792B1 - Circuit integre muni de leurres contre l'ingenierie inverse et procede de fabrication correspondant - Google Patents
Circuit integre muni de leurres contre l'ingenierie inverse et procede de fabrication correspondant Download PDFInfo
- Publication number
- FR3078792B1 FR3078792B1 FR1851957A FR1851957A FR3078792B1 FR 3078792 B1 FR3078792 B1 FR 3078792B1 FR 1851957 A FR1851957 A FR 1851957A FR 1851957 A FR1851957 A FR 1851957A FR 3078792 B1 FR3078792 B1 FR 3078792B1
- Authority
- FR
- France
- Prior art keywords
- integrated circuit
- lures
- manufacturing
- circuit provided
- reverse engineering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000012407 engineering method Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000010287 polarization Effects 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/57—Protection from inspection, reverse engineering or tampering
- H01L23/576—Protection from inspection, reverse engineering or tampering using active circuits
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F21/00—Security arrangements for protecting computers, components thereof, programs or data against unauthorised activity
- G06F21/70—Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer
- G06F21/71—Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer to assure secure computing or processing of information
- G06F21/75—Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer to assure secure computing or processing of information by inhibiting the analysis of circuitry or operation
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F21/00—Security arrangements for protecting computers, components thereof, programs or data against unauthorised activity
- G06F21/70—Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer
- G06F21/86—Secure or tamper-resistant housings
- G06F21/87—Secure or tamper-resistant housings by means of encapsulation, e.g. for integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/57—Protection from inspection, reverse engineering or tampering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N19/00—Methods or arrangements for coding, decoding, compressing or decompressing digital video signals
- H04N19/44—Decoders specially adapted therefor, e.g. video decoders which are asymmetric with respect to the encoder
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/42—Simultaneous manufacture of periphery and memory cells
- H10B41/49—Simultaneous manufacture of periphery and memory cells comprising different types of peripheral transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823462—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Engineering & Computer Science (AREA)
- Computer Security & Cryptography (AREA)
- Software Systems (AREA)
- Mathematical Physics (AREA)
- Manufacturing & Machinery (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Abstract
Le circuit intégré (IC) comprenant un premier domaine (LVP) destiné à être alimenté par une première tension d'alimentation (LVdd) et comportant au moins un premier transistor (PTb, NTb) comprenant une première région de grille (GTb) et une première région de diélectrique de grille (DE1), et un deuxième domaine (HVP) comportant au moins un deuxième transistor (FGT) comprenant une deuxième région de grille (CG) destinée à être polarisée à une deuxième tension (HVdd) supérieure à la première tension d'alimentation (LVdd) et une deuxième région de diélectrique de grille (DE2). Les première et deuxième régions de diélectrique de grille (DE1, DE2) sont de même constitution et sont configurées de façon à ce que ledit au moins un premier transistor (PTb, NTb) soit bloqué pour toute polarisation de ladite première région de grille (GTb) à une valeur inférieure ou égale à la première tension d'alimentation (LVdd).
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1851957A FR3078792B1 (fr) | 2018-03-07 | 2018-03-07 | Circuit integre muni de leurres contre l'ingenierie inverse et procede de fabrication correspondant |
US16/292,958 US11069628B2 (en) | 2018-03-07 | 2019-03-05 | Integrated circuit provided with decoys against reverse engineering and corresponding fabrication process |
CN201910169156.5A CN110246839A (zh) | 2018-03-07 | 2019-03-06 | 设置有防止逆向工程的诱饵的集成电路和对应的制造工艺 |
CN201920283525.9U CN209592037U (zh) | 2018-03-07 | 2019-03-06 | 集成电路和电子设备 |
US17/351,930 US11710711B2 (en) | 2018-03-07 | 2021-06-18 | Integrated circuit provided with decoys against reverse engineering and corresponding fabrication process |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1851957 | 2018-03-07 | ||
FR1851957A FR3078792B1 (fr) | 2018-03-07 | 2018-03-07 | Circuit integre muni de leurres contre l'ingenierie inverse et procede de fabrication correspondant |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3078792A1 FR3078792A1 (fr) | 2019-09-13 |
FR3078792B1 true FR3078792B1 (fr) | 2020-03-27 |
Family
ID=63209469
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1851957A Active FR3078792B1 (fr) | 2018-03-07 | 2018-03-07 | Circuit integre muni de leurres contre l'ingenierie inverse et procede de fabrication correspondant |
Country Status (3)
Country | Link |
---|---|
US (2) | US11069628B2 (fr) |
CN (2) | CN110246839A (fr) |
FR (1) | FR3078792B1 (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3078792B1 (fr) * | 2018-03-07 | 2020-03-27 | Stmicroelectronics (Rousset) Sas | Circuit integre muni de leurres contre l'ingenierie inverse et procede de fabrication correspondant |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5814850A (en) * | 1995-08-22 | 1998-09-29 | Nippon Steel Corporation | Semiconductor device including a capacitor responsible for a power supply voltage to semiconductor device and capable of blocking an increased voltage |
EP1156524B1 (fr) * | 2000-05-15 | 2014-10-22 | Micron Technology, Inc. | Procédé de fabrication d'un circuit intégré ayant une partie à haute densité et une partie logique |
TW546840B (en) * | 2001-07-27 | 2003-08-11 | Hitachi Ltd | Non-volatile semiconductor memory device |
KR20050011317A (ko) * | 2003-07-22 | 2005-01-29 | 삼성전자주식회사 | 리버스 엔지니어링 방지수단을 구비하는 반도체 집적회로및 이의 리버스 엔지니어링 방지방법 |
FR2858113B1 (fr) * | 2003-07-22 | 2008-04-25 | Samsung Electronics Co Ltd | Circuit integre a semi-conducteur et procede de protection contre l'ingenierie inverse |
JP4928825B2 (ja) * | 2006-05-10 | 2012-05-09 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
US10658361B2 (en) * | 2011-12-28 | 2020-05-19 | Intel Corporation | Methods of integrating multiple gate dielectric transistors on a tri-gate (FINFET) process |
US8836006B2 (en) * | 2012-12-14 | 2014-09-16 | Spansion Llc | Integrated circuits with non-volatile memory and methods for manufacture |
US9306058B2 (en) * | 2013-10-02 | 2016-04-05 | Infineon Technologies Ag | Integrated circuit and method of manufacturing an integrated circuit |
FR3078792B1 (fr) * | 2018-03-07 | 2020-03-27 | Stmicroelectronics (Rousset) Sas | Circuit integre muni de leurres contre l'ingenierie inverse et procede de fabrication correspondant |
-
2018
- 2018-03-07 FR FR1851957A patent/FR3078792B1/fr active Active
-
2019
- 2019-03-05 US US16/292,958 patent/US11069628B2/en active Active
- 2019-03-06 CN CN201910169156.5A patent/CN110246839A/zh active Pending
- 2019-03-06 CN CN201920283525.9U patent/CN209592037U/zh active Active
-
2021
- 2021-06-18 US US17/351,930 patent/US11710711B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN209592037U (zh) | 2019-11-05 |
FR3078792A1 (fr) | 2019-09-13 |
US20190279947A1 (en) | 2019-09-12 |
US11710711B2 (en) | 2023-07-25 |
US20210313280A1 (en) | 2021-10-07 |
US11069628B2 (en) | 2021-07-20 |
CN110246839A (zh) | 2019-09-17 |
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