FR3048816B1 - Procede de fabrication d'un dispositif avec transistor nmos contraint en tension et transistor pmos contraint en compression uni-axiale - Google Patents

Procede de fabrication d'un dispositif avec transistor nmos contraint en tension et transistor pmos contraint en compression uni-axiale Download PDF

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Publication number
FR3048816B1
FR3048816B1 FR1651963A FR1651963A FR3048816B1 FR 3048816 B1 FR3048816 B1 FR 3048816B1 FR 1651963 A FR1651963 A FR 1651963A FR 1651963 A FR1651963 A FR 1651963A FR 3048816 B1 FR3048816 B1 FR 3048816B1
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Prior art keywords
uni
constrained
manufacturing device
axial compression
voltage constant
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FR1651963A
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FR3048816A1 (fr
Inventor
Sylvain Maitrejean
Emmanuel Augendre
Pierre Morin
Shay REBOH
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
STMicroelectronics lnc USA
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Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
STMicroelectronics lnc USA
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Priority to FR1651963A priority Critical patent/FR3048816B1/fr
Priority to US15/452,049 priority patent/US10600786B2/en
Publication of FR3048816A1 publication Critical patent/FR3048816A1/fr
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    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
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    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
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  • Microelectronics & Electronic Packaging (AREA)
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  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
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  • High Energy & Nuclear Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
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  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
FR1651963A 2016-03-09 2016-03-09 Procede de fabrication d'un dispositif avec transistor nmos contraint en tension et transistor pmos contraint en compression uni-axiale Active FR3048816B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1651963A FR3048816B1 (fr) 2016-03-09 2016-03-09 Procede de fabrication d'un dispositif avec transistor nmos contraint en tension et transistor pmos contraint en compression uni-axiale
US15/452,049 US10600786B2 (en) 2016-03-09 2017-03-07 Method for fabricating a device with a tensile-strained NMOS transistor and a uniaxial compression strained PMOS transistor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1651963 2016-03-09
FR1651963A FR3048816B1 (fr) 2016-03-09 2016-03-09 Procede de fabrication d'un dispositif avec transistor nmos contraint en tension et transistor pmos contraint en compression uni-axiale

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Publication Number Publication Date
FR3048816A1 FR3048816A1 (fr) 2017-09-15
FR3048816B1 true FR3048816B1 (fr) 2018-04-13

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FR3088480B1 (fr) 2018-11-09 2020-12-04 Commissariat Energie Atomique Procede de collage avec desorption stimulee electroniquement
FR3091619B1 (fr) 2019-01-07 2021-01-29 Commissariat Energie Atomique Procédé de guérison avant transfert d’une couche semi-conductrice
FR3091620B1 (fr) 2019-01-07 2021-01-29 Commissariat Energie Atomique Procédé de transfert de couche avec réduction localisée d’une capacité à initier une fracture
FR3100083B1 (fr) 2019-08-20 2021-09-10 Commissariat Energie Atomique Procédé de guérison d’une couche implantée comprenant un traitement thermique préalable à une recristallisation par recuit laser
US11469137B2 (en) 2019-12-17 2022-10-11 Commissariat A L'energie Atomique Et Aux Energies Alternatives Manufacturing process of an RF-SOI trapping layer substrate resulting from a crystalline transformation of a buried layer

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000243854A (ja) * 1999-02-22 2000-09-08 Toshiba Corp 半導体装置及びその製造方法
US6558994B2 (en) * 2001-03-01 2003-05-06 Chartered Semiconductors Maufacturing Ltd. Dual silicon-on-insulator device wafer die
US7335545B2 (en) 2002-06-07 2008-02-26 Amberwave Systems Corporation Control of strain in device layers by prevention of relaxation
US7601858B2 (en) * 2004-08-17 2009-10-13 Gs Cleantech Corporation Method of processing ethanol byproducts and related subsystems
CN100481345C (zh) * 2005-02-24 2009-04-22 硅绝缘体技术有限公司 SiGe层的热氧化及其应用
US7569443B2 (en) * 2005-06-21 2009-08-04 Intel Corporation Complementary metal oxide semiconductor integrated circuit using raised source drain and replacement metal gate
US20070010073A1 (en) * 2005-07-06 2007-01-11 Chien-Hao Chen Method of forming a MOS device having a strained channel region
DE102006019935B4 (de) * 2006-04-28 2011-01-13 Advanced Micro Devices, Inc., Sunnyvale SOI-Transistor mit reduziertem Körperpotential und ein Verfahren zur Herstellung
US20080017142A1 (en) * 2006-06-30 2008-01-24 Eaton Corporation Energy Recovery System for an Added Motion System
US20080124858A1 (en) * 2006-08-07 2008-05-29 Bich-Yen Nguyen Selective stress relaxation by amorphizing implant in strained silicon on insulator integrated circuit
US7494886B2 (en) * 2007-01-12 2009-02-24 International Business Machines Corporation Uniaxial strain relaxation of biaxial-strained thin films using ion implantation
US8003454B2 (en) * 2008-05-22 2011-08-23 Freescale Semiconductor, Inc. CMOS process with optimized PMOS and NMOS transistor devices
US20100044748A1 (en) * 2008-08-19 2010-02-25 Ta-Cheng Lin Electrostatic discharge protection device
US8492278B2 (en) * 2010-03-30 2013-07-23 Micron Technology, Inc. Method of forming a plurality of spaced features
US8617968B1 (en) * 2012-06-18 2013-12-31 International Business Machines Corporation Strained silicon and strained silicon germanium on insulator metal oxide semiconductor field effect transistors (MOSFETs)
FR3014244B1 (fr) * 2013-11-29 2018-05-25 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede ameliore de realisation d'un substrat semi-conducteur contraint sur isolant

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