FR3037718B1 - Dispositif electronique de chauffage d'une structure integree, par exemple un transistor mos - Google Patents

Dispositif electronique de chauffage d'une structure integree, par exemple un transistor mos

Info

Publication number
FR3037718B1
FR3037718B1 FR1555459A FR1555459A FR3037718B1 FR 3037718 B1 FR3037718 B1 FR 3037718B1 FR 1555459 A FR1555459 A FR 1555459A FR 1555459 A FR1555459 A FR 1555459A FR 3037718 B1 FR3037718 B1 FR 3037718B1
Authority
FR
France
Prior art keywords
heating
electronic device
mos transistor
integrated structure
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1555459A
Other languages
English (en)
Other versions
FR3037718A1 (fr
Inventor
Philippe Galy
Sotirios Athanasiou
Coz Julien Le
Sylvain Engels
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR1555459A priority Critical patent/FR3037718B1/fr
Priority to CN201520965124.3U priority patent/CN205428924U/zh
Priority to CN201510846184.8A priority patent/CN106257667B/zh
Priority to US14/960,052 priority patent/US9746863B2/en
Publication of FR3037718A1 publication Critical patent/FR3037718A1/fr
Application granted granted Critical
Publication of FR3037718B1 publication Critical patent/FR3037718B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/462—Regulating voltage or current wherein the variable actually regulated by the final control device is dc as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
    • G05F1/463—Sources providing an output which depends on temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/345—Arrangements for heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR1555459A 2015-06-16 2015-06-16 Dispositif electronique de chauffage d'une structure integree, par exemple un transistor mos Expired - Fee Related FR3037718B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1555459A FR3037718B1 (fr) 2015-06-16 2015-06-16 Dispositif electronique de chauffage d'une structure integree, par exemple un transistor mos
CN201520965124.3U CN205428924U (zh) 2015-06-16 2015-11-26 电子器件
CN201510846184.8A CN106257667B (zh) 2015-06-16 2015-11-26 用于加热例如mos晶体管的集成结构的电子器件
US14/960,052 US9746863B2 (en) 2015-06-16 2015-12-04 Electronic device for heating an integrated structure, for example an MOS transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1555459A FR3037718B1 (fr) 2015-06-16 2015-06-16 Dispositif electronique de chauffage d'une structure integree, par exemple un transistor mos

Publications (2)

Publication Number Publication Date
FR3037718A1 FR3037718A1 (fr) 2016-12-23
FR3037718B1 true FR3037718B1 (fr) 2017-06-23

Family

ID=54066047

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1555459A Expired - Fee Related FR3037718B1 (fr) 2015-06-16 2015-06-16 Dispositif electronique de chauffage d'une structure integree, par exemple un transistor mos

Country Status (3)

Country Link
US (1) US9746863B2 (fr)
CN (2) CN205428924U (fr)
FR (1) FR3037718B1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3037718B1 (fr) * 2015-06-16 2017-06-23 St Microelectronics Sa Dispositif electronique de chauffage d'une structure integree, par exemple un transistor mos

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4356379A (en) * 1978-01-13 1982-10-26 Burr-Brown Research Corporation Integrated heating element and method for thermal testing and compensation of integrated circuits
US6329690B1 (en) * 1999-10-22 2001-12-11 International Business Machines Corporation Method and apparatus to match semiconductor device performance
DE10036914A1 (de) * 2000-07-28 2002-02-14 Infineon Technologies Ag Integrierte Schaltung mit Temperatursensor
US6882571B1 (en) * 2000-12-19 2005-04-19 Xilinx, Inc. Low voltage non-volatile memory cell
US6847010B1 (en) * 2002-12-04 2005-01-25 Xilinx, Inc. Methods and circuits for measuring the thermal resistance of a packaged IC
US7890893B2 (en) * 2008-01-10 2011-02-15 International Business Machines Corporation Design structure for semiconductor on-chip repair scheme for negative bias temperature instability
DE102008026135B4 (de) * 2008-05-30 2012-02-16 GLOBALFOUNDRIES Dresden Module One Ltd. Liability Company & Co. KG Steuerung für tiefe Temperaturen in einem Halbleiterbauelement
US8159814B2 (en) * 2009-01-19 2012-04-17 International Business Machines Corporation Method of operating transistors and structures thereof for improved reliability and lifetime
US8927909B2 (en) * 2010-10-11 2015-01-06 Stmicroelectronics, Inc. Closed loop temperature controlled circuit to improve device stability
US9276012B2 (en) * 2010-11-03 2016-03-01 Texas Instruments Incorporated Method to match SOI transistors using a local heater element
WO2012114400A1 (fr) * 2011-02-21 2012-08-30 パナソニック株式会社 Circuit intégré
JP2014130913A (ja) * 2012-12-28 2014-07-10 Toshiba Corp 半導体装置及びその駆動方法
US9000507B2 (en) * 2013-06-27 2015-04-07 Freescale Semiconductor, Inc. Method and system for recovering from transistor aging using heating
CN104242388B (zh) * 2014-09-01 2017-06-30 广东欧珀移动通信有限公司 充电电路、电芯和移动终端
FR3037718B1 (fr) * 2015-06-16 2017-06-23 St Microelectronics Sa Dispositif electronique de chauffage d'une structure integree, par exemple un transistor mos

Also Published As

Publication number Publication date
CN106257667A (zh) 2016-12-28
CN205428924U (zh) 2016-08-03
FR3037718A1 (fr) 2016-12-23
US9746863B2 (en) 2017-08-29
CN106257667B (zh) 2020-03-20
US20160370815A1 (en) 2016-12-22

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