FR3026557B1 - Procede de dopage d'un semi-conducteur a base de gan - Google Patents

Procede de dopage d'un semi-conducteur a base de gan Download PDF

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Publication number
FR3026557B1
FR3026557B1 FR1459130A FR1459130A FR3026557B1 FR 3026557 B1 FR3026557 B1 FR 3026557B1 FR 1459130 A FR1459130 A FR 1459130A FR 1459130 A FR1459130 A FR 1459130A FR 3026557 B1 FR3026557 B1 FR 3026557B1
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France
Prior art keywords
gan
doping
semiconductor based
semiconductor
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1459130A
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English (en)
French (fr)
Other versions
FR3026557A1 (fr
Inventor
Claire AGRAFFEIL
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1459130A priority Critical patent/FR3026557B1/fr
Priority to EP15184348.9A priority patent/EP3001448A1/fr
Priority to US14/855,761 priority patent/US9496348B2/en
Priority to JP2015187791A priority patent/JP6847573B2/ja
Publication of FR3026557A1 publication Critical patent/FR3026557A1/fr
Application granted granted Critical
Publication of FR3026557B1 publication Critical patent/FR3026557B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/206—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group III-V semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/214—Recoil-implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/28—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by an annealing step, e.g. for activation of dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H10P95/904—Thermal treatments, e.g. annealing or sintering of Group III-V semiconductors
FR1459130A 2014-09-26 2014-09-26 Procede de dopage d'un semi-conducteur a base de gan Expired - Fee Related FR3026557B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1459130A FR3026557B1 (fr) 2014-09-26 2014-09-26 Procede de dopage d'un semi-conducteur a base de gan
EP15184348.9A EP3001448A1 (fr) 2014-09-26 2015-09-08 Procédé de dopage d'un semi-conducteur à base de gan
US14/855,761 US9496348B2 (en) 2014-09-26 2015-09-16 Method for doping a GaN-base semiconductor
JP2015187791A JP6847573B2 (ja) 2014-09-26 2015-09-25 ＧａＮを主成分とする半導体をドープするための方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1459130A FR3026557B1 (fr) 2014-09-26 2014-09-26 Procede de dopage d'un semi-conducteur a base de gan
FR1459130 2014-09-26

Publications (2)

Publication Number Publication Date
FR3026557A1 FR3026557A1 (fr) 2016-04-01
FR3026557B1 true FR3026557B1 (fr) 2018-03-16

Family

ID=51866239

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1459130A Expired - Fee Related FR3026557B1 (fr) 2014-09-26 2014-09-26 Procede de dopage d'un semi-conducteur a base de gan

Country Status (4)

Country Link
US (1) US9496348B2 (https=)
EP (1) EP3001448A1 (https=)
JP (1) JP6847573B2 (https=)
FR (1) FR3026557B1 (https=)

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Publication number Priority date Publication date Assignee Title
JP6439642B2 (ja) * 2015-09-30 2018-12-19 豊田合成株式会社 Ｍｐｓダイオードの製造方法
JP6402746B2 (ja) * 2016-05-27 2018-10-10 株式会社豊田中央研究所 半導体基板と、その調整方法と、半導体装置
JP6669029B2 (ja) * 2016-09-28 2020-03-18 豊田合成株式会社 半導体装置の製造方法
EP3731260A4 (en) * 2017-12-19 2021-12-22 Sumco Corporation METHOD OF MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE
US12142642B2 (en) * 2018-06-20 2024-11-12 Lawrence Livermore National Security, Llc Field assisted interfacial diffusion doping through heterostructure design
US11881404B2 (en) * 2020-02-11 2024-01-23 QROMIS, Inc. Method and system for diffusing magnesium in gallium nitride materials using sputtered magnesium sources
WO2022025080A1 (ja) * 2020-07-29 2022-02-03 京セラ株式会社 半導体素子の製造方法、半導体素子及び半導体装置
US11621168B1 (en) 2022-07-12 2023-04-04 Gyrotron Technology, Inc. Method and system for doping semiconductor materials
DE102022130078A1 (de) 2022-11-14 2024-05-16 Helmholtz-Zentrum Dresden - Rossendorf E. V. Verfahren zum herstellen p dotierter und n dotierter gruppe-iii-nitrid-verbindungshalbleiter und eines halbleiterbauelements

Family Cites Families (19)

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JPS53104158A (en) * 1977-02-23 1978-09-11 Toshiba Corp Manufacture for semiconductor device
JPS5445571A (en) * 1977-09-17 1979-04-10 Fujitsu Ltd Manufacture for semiconductor device
JPS57501656A (https=) 1980-10-28 1982-09-09
JPH0766925B2 (ja) * 1990-12-26 1995-07-19 財団法人韓国電子通信研究所 ガリウム砒素金属半導体電界効果トランジスタの製造方法
US5306662A (en) 1991-11-08 1994-04-26 Nichia Chemical Industries, Ltd. Method of manufacturing P-type compound semiconductor
KR940007668B1 (ko) * 1991-12-26 1994-08-22 재단법인 한국전자통신연구소 갈륨비소 금속반도체 전계효과 트랜지스터의 제조방법
JPH0963982A (ja) * 1995-08-28 1997-03-07 Koichi Ishida ノックオンにより伝導型を制御して作成した半導体装置
US5766695A (en) 1996-11-27 1998-06-16 Hughes Electronics Corporation Method for reducing surface layer defects in semiconductor materials having a volatile species
US7589004B2 (en) 2005-06-21 2009-09-15 Los Alamos National Security, Llc Method for implantation of high dopant concentrations in wide band gap materials
KR100661602B1 (ko) * 2005-12-09 2006-12-26 삼성전기주식회사 수직 구조 질화갈륨계 ｌｅｄ 소자의 제조방법
US7419892B2 (en) * 2005-12-13 2008-09-02 Cree, Inc. Semiconductor devices including implanted regions and protective layers and methods of forming the same
US9040398B2 (en) 2006-05-16 2015-05-26 Cree, Inc. Method of fabricating seminconductor devices including self aligned refractory contacts
JP2008135700A (ja) * 2006-11-01 2008-06-12 Furukawa Electric Co Ltd:The Ｉｉｉ族窒化物膜の製造方法及びｉｉｉ族窒化物半導体素子
US8093597B2 (en) 2007-06-25 2012-01-10 International Rectifier Corporation In situ dopant implantation and growth of a III-nitride semiconductor body
US7994027B2 (en) 2008-05-09 2011-08-09 George Mason Intellectual Properties, Inc. Microwave heating for semiconductor nanostructure fabrication
US7977224B2 (en) 2008-12-03 2011-07-12 The United States Of America As Represented By The Secretary Of The Army Method using multiple layer annealing cap for fabricating group III-nitride semiconductor device structures and devices formed thereby
US8518808B2 (en) 2010-09-17 2013-08-27 The United States Of America, As Represented By The Secretary Of The Navy Defects annealing and impurities activation in III-nitride compound
US20130056793A1 (en) 2011-09-07 2013-03-07 Applied Materials, Inc. Providing group v and group vi over pressure for thermal treatment of compound semiconductor thin films
US10460955B2 (en) 2014-08-25 2019-10-29 The United States Of America As Represented By The Secretary Of The Army Methodology for annealing group III-nitride semiconductor device structures using novel weighted cover systems

Also Published As

Publication number Publication date
FR3026557A1 (fr) 2016-04-01
JP2016072630A (ja) 2016-05-09
US9496348B2 (en) 2016-11-15
EP3001448A1 (fr) 2016-03-30
US20160093698A1 (en) 2016-03-31
JP6847573B2 (ja) 2021-03-24

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