FR3025654B1 - Transistor finfet comportant des portions de sige d'orientation cristalline [111] - Google Patents

Transistor finfet comportant des portions de sige d'orientation cristalline [111]

Info

Publication number
FR3025654B1
FR3025654B1 FR1458487A FR1458487A FR3025654B1 FR 3025654 B1 FR3025654 B1 FR 3025654B1 FR 1458487 A FR1458487 A FR 1458487A FR 1458487 A FR1458487 A FR 1458487A FR 3025654 B1 FR3025654 B1 FR 3025654B1
Authority
FR
France
Prior art keywords
crystalline orientation
transistor finfet
sige portions
sige
finfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1458487A
Other languages
English (en)
Other versions
FR3025654A1 (fr
Inventor
Sylvain Maitrejean
Emmanuel Augendre
Louis Hutin
Yves Morand
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1458487A priority Critical patent/FR3025654B1/fr
Priority to US14/849,060 priority patent/US9536951B2/en
Publication of FR3025654A1 publication Critical patent/FR3025654A1/fr
Application granted granted Critical
Publication of FR3025654B1 publication Critical patent/FR3025654B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/1054—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a variation of the composition, e.g. channel with strained layer for increasing the mobility
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
    • H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H01L29/7853—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET the body having a non-rectangular crossection

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
FR1458487A 2014-09-10 2014-09-10 Transistor finfet comportant des portions de sige d'orientation cristalline [111] Active FR3025654B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1458487A FR3025654B1 (fr) 2014-09-10 2014-09-10 Transistor finfet comportant des portions de sige d'orientation cristalline [111]
US14/849,060 US9536951B2 (en) 2014-09-10 2015-09-09 FinFET transistor comprising portions of SiGe with a crystal orientation [111]

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1458487A FR3025654B1 (fr) 2014-09-10 2014-09-10 Transistor finfet comportant des portions de sige d'orientation cristalline [111]

Publications (2)

Publication Number Publication Date
FR3025654A1 FR3025654A1 (fr) 2016-03-11
FR3025654B1 true FR3025654B1 (fr) 2016-12-23

Family

ID=51726819

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1458487A Active FR3025654B1 (fr) 2014-09-10 2014-09-10 Transistor finfet comportant des portions de sige d'orientation cristalline [111]

Country Status (2)

Country Link
US (1) US9536951B2 (fr)
FR (1) FR3025654B1 (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3007892B1 (fr) 2013-06-27 2015-07-31 Commissariat Energie Atomique Procede de transfert d'une couche mince avec apport d'energie thermique a une zone fragilisee via une couche inductive
US10115807B2 (en) * 2015-11-18 2018-10-30 Globalfoundries Inc. Method, apparatus and system for improved performance using tall fins in finFET devices
CN107154429B (zh) * 2016-03-03 2020-04-10 上海新昇半导体科技有限公司 鳍状场效应晶体管及其制备方法
WO2017171845A1 (fr) * 2016-04-01 2017-10-05 Intel Corporation Transistor à ailettes perlées
US9773662B1 (en) * 2016-06-03 2017-09-26 Taiwan Semiconductor Manufacturing Co., Ltd. Method for fabricating a fine structure
US9773875B1 (en) 2016-07-20 2017-09-26 International Business Machines Corporation Fabrication of silicon-germanium fin structure having silicon-rich outer surface
US9679780B1 (en) * 2016-09-28 2017-06-13 International Business Machines Corporation Polysilicon residue removal in nanosheet MOSFETs
WO2018125082A1 (fr) * 2016-12-28 2018-07-05 Intel Corporation Transistors riches en ge utilisant une couche de réduction de résistance de contact source/drain riche en si
US10361130B2 (en) * 2017-04-26 2019-07-23 International Business Machines Corporation Dual channel silicon/silicon germanium complementary metal oxide semiconductor performance with interface engineering
FR3088480B1 (fr) 2018-11-09 2020-12-04 Commissariat Energie Atomique Procede de collage avec desorption stimulee electroniquement
FR3091619B1 (fr) 2019-01-07 2021-01-29 Commissariat Energie Atomique Procédé de guérison avant transfert d’une couche semi-conductrice
JP2023110192A (ja) * 2022-01-28 2023-08-09 ソニーセミコンダクタソリューションズ株式会社 半導体装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4724231B2 (ja) * 2009-01-29 2011-07-13 株式会社東芝 半導体装置およびその製造方法
JP5580355B2 (ja) * 2012-03-12 2014-08-27 株式会社東芝 半導体装置
FR2989517B1 (fr) 2012-04-12 2015-01-16 Commissariat Energie Atomique Reprise de contact sur substrat semi-conducteur heterogene
FR3005309B1 (fr) 2013-05-02 2016-03-11 Commissariat Energie Atomique Transistors a nanofils et planaires cointegres sur substrat soi utbox
FR3014244B1 (fr) 2013-11-29 2018-05-25 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede ameliore de realisation d'un substrat semi-conducteur contraint sur isolant
FR3015769B1 (fr) 2013-12-23 2017-08-11 Commissariat Energie Atomique Procede ameliore de realisation de blocs semi-conducteurs contraints sur la couche isolante d'un substrat semi-conducteur sur isolant
FR3015768B1 (fr) 2013-12-23 2017-08-11 Commissariat Energie Atomique Procede ameliore de modification de l'etat de contrainte d'un bloc de materiau semi-conducteur
US9219154B1 (en) * 2014-07-15 2015-12-22 International Business Machines Corporation Method of fabricating electrostatically enhanced fins and stacked nanowire field effect transistors

Also Published As

Publication number Publication date
FR3025654A1 (fr) 2016-03-11
US9536951B2 (en) 2017-01-03
US20160071933A1 (en) 2016-03-10

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