FR3024279B1 - Procede de fabrication d'une plaquette de materiau semi-conducteur a base de nitrure d'elements 13 - Google Patents

Procede de fabrication d'une plaquette de materiau semi-conducteur a base de nitrure d'elements 13

Info

Publication number
FR3024279B1
FR3024279B1 FR1457268A FR1457268A FR3024279B1 FR 3024279 B1 FR3024279 B1 FR 3024279B1 FR 1457268 A FR1457268 A FR 1457268A FR 1457268 A FR1457268 A FR 1457268A FR 3024279 B1 FR3024279 B1 FR 3024279B1
Authority
FR
France
Prior art keywords
semi
manufacturing
material based
conductor material
element nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1457268A
Other languages
English (en)
Other versions
FR3024279A1 (fr
Inventor
Bernard Beaumont
Jean-Pierre Faurie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Saint Gobain Lumilog SAS
Original Assignee
Saint Gobain Lumilog SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saint Gobain Lumilog SAS filed Critical Saint Gobain Lumilog SAS
Priority to FR1457268A priority Critical patent/FR3024279B1/fr
Priority to PCT/EP2015/067117 priority patent/WO2016016171A1/fr
Priority to US15/327,736 priority patent/US10181399B2/en
Priority to EP15750002.6A priority patent/EP3174677A1/fr
Priority to TW104124433A priority patent/TW201611322A/zh
Publication of FR3024279A1 publication Critical patent/FR3024279A1/fr
Application granted granted Critical
Publication of FR3024279B1 publication Critical patent/FR3024279B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)
FR1457268A 2014-07-28 2014-07-28 Procede de fabrication d'une plaquette de materiau semi-conducteur a base de nitrure d'elements 13 Expired - Fee Related FR3024279B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR1457268A FR3024279B1 (fr) 2014-07-28 2014-07-28 Procede de fabrication d'une plaquette de materiau semi-conducteur a base de nitrure d'elements 13
PCT/EP2015/067117 WO2016016171A1 (fr) 2014-07-28 2015-07-27 Procede de fabrication d'une plaquette de materiau semi-conducteur a base de nitrure d'elements 13
US15/327,736 US10181399B2 (en) 2014-07-28 2015-07-27 Method for manufacturing a wafer of semiconducting material based on a group 13 element nitride
EP15750002.6A EP3174677A1 (fr) 2014-07-28 2015-07-27 Procede de fabrication d'une plaquette de materiau semi-conducteur a base de nitrure d'elements 13
TW104124433A TW201611322A (zh) 2014-07-28 2015-07-28 基於１３族元素之氮化物半導體材料的晶圓之製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1457268A FR3024279B1 (fr) 2014-07-28 2014-07-28 Procede de fabrication d'une plaquette de materiau semi-conducteur a base de nitrure d'elements 13

Publications (2)

Publication Number Publication Date
FR3024279A1 FR3024279A1 (fr) 2016-01-29
FR3024279B1 true FR3024279B1 (fr) 2017-11-10

Family

ID=51519126

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1457268A Expired - Fee Related FR3024279B1 (fr) 2014-07-28 2014-07-28 Procede de fabrication d'une plaquette de materiau semi-conducteur a base de nitrure d'elements 13

Country Status (5)

Country Link
US (1) US10181399B2 (fr)
EP (1) EP3174677A1 (fr)
FR (1) FR3024279B1 (fr)
TW (1) TW201611322A (fr)
WO (1) WO2016016171A1 (fr)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009266874A (ja) * 2008-04-22 2009-11-12 Nippon Telegr & Teleph Corp <Ntt> 半導体結晶成長用基板および半導体結晶
JP2010199347A (ja) * 2009-02-26 2010-09-09 Canon Inc 露光方法及びデバイス製造方法
TWI525664B (zh) * 2010-03-05 2016-03-11 Namiki Precision Jewel Co Ltd A crystalline film, a device, and a method for producing a crystalline film or device
US9105472B2 (en) * 2010-04-13 2015-08-11 Namiki Seimitsu Houseki Kabushiki Kaisha Single-crystal substrate,single-crystal substrate having crystalline film,crystalline film,method for producing single-crystal substrate having crystalline film,method for producing crystalline substrate,and method for producing element

Also Published As

Publication number Publication date
FR3024279A1 (fr) 2016-01-29
US10181399B2 (en) 2019-01-15
WO2016016171A1 (fr) 2016-02-04
EP3174677A1 (fr) 2017-06-07
US20170213719A1 (en) 2017-07-27
TW201611322A (zh) 2016-03-16

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