FR3022914B1 - Composition de polissage chimique mecanique et procede pour polir du tungstene - Google Patents

Composition de polissage chimique mecanique et procede pour polir du tungstene Download PDF

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Publication number
FR3022914B1
FR3022914B1 FR1555934A FR1555934A FR3022914B1 FR 3022914 B1 FR3022914 B1 FR 3022914B1 FR 1555934 A FR1555934 A FR 1555934A FR 1555934 A FR1555934 A FR 1555934A FR 3022914 B1 FR3022914 B1 FR 3022914B1
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FR
France
Prior art keywords
tungsten
polishing
polishing composition
mechanical chemical
rate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1555934A
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English (en)
Other versions
FR3022914A1 (fr
Inventor
Yi Guo
Raymond L. Lavoie, JR.
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm and Haas Electronic Materials CMP Holdings Inc
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
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Publication date
Application filed by Rohm and Haas Electronic Materials CMP Holdings Inc filed Critical Rohm and Haas Electronic Materials CMP Holdings Inc
Publication of FR3022914A1 publication Critical patent/FR3022914A1/fr
Application granted granted Critical
Publication of FR3022914B1 publication Critical patent/FR3022914B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Materials Engineering (AREA)

Abstract

Il est mis à disposition une composition de polissage mécanochimique et un procédé pour polir du tungstène, comprenant : un abrasif à base d'oxyde métallique ; un oxydant ; une substance de formule I amplifiant la vitesse d'élimination du tungstène ; et de l'eau ; dans lesquels la composition de polissage présente une meilleure vitesse d'élimination du tungstène et une amplification de la vitesse d'élimination du tungstène.
FR1555934A 2014-06-27 2015-06-26 Composition de polissage chimique mecanique et procede pour polir du tungstene Expired - Fee Related FR3022914B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/317,334 US9275899B2 (en) 2014-06-27 2014-06-27 Chemical mechanical polishing composition and method for polishing tungsten
US14317334 2014-06-27

Publications (2)

Publication Number Publication Date
FR3022914A1 FR3022914A1 (fr) 2016-01-01
FR3022914B1 true FR3022914B1 (fr) 2020-01-17

Family

ID=54839850

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1555934A Expired - Fee Related FR3022914B1 (fr) 2014-06-27 2015-06-26 Composition de polissage chimique mecanique et procede pour polir du tungstene

Country Status (7)

Country Link
US (1) US9275899B2 (fr)
JP (1) JP6595227B2 (fr)
KR (1) KR102427996B1 (fr)
CN (1) CN105315894B (fr)
DE (1) DE102015007226A1 (fr)
FR (1) FR3022914B1 (fr)
TW (1) TWI565771B (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9534148B1 (en) * 2015-12-21 2017-01-03 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of polishing semiconductor substrate
KR102649775B1 (ko) * 2016-09-28 2024-03-20 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드 4차 포스포늄 화합물을 포함하는 조성물 및 방법을 사용하는 텅스텐의 화학 기계적 연마
WO2018058397A1 (fr) * 2016-09-29 2018-04-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Procédé de polissage chimico-mécanique destiné au tungstène
JP6936316B2 (ja) * 2016-09-29 2021-09-15 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド タングステンのための化学機械研磨法
US10633558B2 (en) * 2016-09-29 2020-04-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten
CN108214108A (zh) * 2016-12-09 2018-06-29 中芯国际集成电路制造(上海)有限公司 一种化学机械研磨方法
US10181408B2 (en) * 2017-01-31 2019-01-15 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten using polyglycols and polyglycol derivatives
US9984895B1 (en) * 2017-01-31 2018-05-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten
US10600655B2 (en) * 2017-08-10 2020-03-24 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten
US20190211228A1 (en) * 2018-01-09 2019-07-11 Cabot Microelectronics Corporation Tungsten bulk polishing method with improved topography
US10995238B2 (en) * 2018-07-03 2021-05-04 Rohm And Haas Electronic Materials Cmp Holdings Neutral to alkaline chemical mechanical polishing compositions and methods for tungsten
JP7222750B2 (ja) * 2019-02-14 2023-02-15 ニッタ・デュポン株式会社 研磨用組成物
US20220348788A1 (en) * 2021-04-27 2022-11-03 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing composition and method of polishing a substrate having enhanced defect reduction

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6083419A (en) 1997-07-28 2000-07-04 Cabot Corporation Polishing composition including an inhibitor of tungsten etching
KR100343391B1 (ko) * 1999-11-18 2002-08-01 삼성전자 주식회사 화학 및 기계적 연마용 비선택성 슬러리 및 그제조방법과, 이를 이용하여 웨이퍼상의 절연층 내에플러그를 형성하는 방법
US20050076580A1 (en) 2003-10-10 2005-04-14 Air Products And Chemicals, Inc. Polishing composition and use thereof
US7253111B2 (en) 2004-04-21 2007-08-07 Rohm And Haas Electronic Materials Cmp Holding, Inc. Barrier polishing solution
US7446046B2 (en) 2005-01-06 2008-11-04 Intel Corporation Selective polish for fabricating electronic devices
WO2007130350A1 (fr) * 2006-05-02 2007-11-15 Cabot Microelectronics Corporation Compositions et procÉdÉs pour le polissage mÉcanochimique de matÉriaux semi-conducteurs
US20080020680A1 (en) * 2006-07-24 2008-01-24 Cabot Microelectronics Corporation Rate-enhanced CMP compositions for dielectric films
CN101591508A (zh) * 2008-05-30 2009-12-02 安集微电子（上海）有限公司 一种用于金属化学机械抛光的抛光浆料及其用途
JP5371416B2 (ja) * 2008-12-25 2013-12-18 富士フイルム株式会社 研磨液及び研磨方法
CN102093816B (zh) * 2009-12-11 2017-02-22 安集微电子（上海）有限公司 一种化学机械抛光液
US8431490B2 (en) 2010-03-31 2013-04-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of chemical mechanical polishing a substrate with polishing composition adapted to enhance silicon oxide removal
JP5979872B2 (ja) * 2011-01-31 2016-08-31 花王株式会社 磁気ディスク基板の製造方法

Also Published As

Publication number Publication date
JP2016048777A (ja) 2016-04-07
CN105315894A (zh) 2016-02-10
KR102427996B1 (ko) 2022-08-01
KR20160001684A (ko) 2016-01-06
CN105315894B (zh) 2019-06-28
JP6595227B2 (ja) 2019-10-23
FR3022914A1 (fr) 2016-01-01
US20150380295A1 (en) 2015-12-31
US9275899B2 (en) 2016-03-01
DE102015007226A1 (de) 2015-12-31
TWI565771B (zh) 2017-01-11
TW201615776A (zh) 2016-05-01

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