FR2993792B1 - Film de chalcogenure(s) metallique(s) cristallise(s) a gros grains, solution colloidale de particules amorphes et procedes de preparation. - Google Patents

Film de chalcogenure(s) metallique(s) cristallise(s) a gros grains, solution colloidale de particules amorphes et procedes de preparation.

Info

Publication number
FR2993792B1
FR2993792B1 FR1257242A FR1257242A FR2993792B1 FR 2993792 B1 FR2993792 B1 FR 2993792B1 FR 1257242 A FR1257242 A FR 1257242A FR 1257242 A FR1257242 A FR 1257242A FR 2993792 B1 FR2993792 B1 FR 2993792B1
Authority
FR
France
Prior art keywords
crystallized
preparation
film
methods
colloidal solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1257242A
Other languages
English (en)
French (fr)
Other versions
FR2993792A1 (fr
Inventor
Stephane Bourdais
Christophe Chone
Yan Cuccaro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IMRA Europe SAS
Original Assignee
IMRA Europe SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1257242A priority Critical patent/FR2993792B1/fr
Application filed by IMRA Europe SAS filed Critical IMRA Europe SAS
Priority to EP13745450.0A priority patent/EP2877277B1/fr
Priority to PCT/FR2013/051597 priority patent/WO2014016489A2/fr
Priority to JP2015523587A priority patent/JP6312668B2/ja
Priority to US14/413,316 priority patent/US9731262B2/en
Publication of FR2993792A1 publication Critical patent/FR2993792A1/fr
Priority to US15/655,952 priority patent/US10632441B2/en
Application granted granted Critical
Publication of FR2993792B1 publication Critical patent/FR2993792B1/fr
Priority to JP2018052441A priority patent/JP6629374B2/ja
Priority to US16/820,984 priority patent/US20200215509A1/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J13/00—Colloid chemistry, e.g. the production of colloidal materials or their solutions, not otherwise provided for; Making microcapsules or microballoons
    • B01J13/0004—Preparation of sols
    • B01J13/0008—Sols of inorganic materials in water
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
    • B01F23/50—Mixing liquids with solids
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J13/00—Colloid chemistry, e.g. the production of colloidal materials or their solutions, not otherwise provided for; Making microcapsules or microballoons
    • B01J13/0004—Preparation of sols
    • B01J13/0008—Sols of inorganic materials in water
    • B01J13/0013—Sols of inorganic materials in water from a precipitate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J13/00—Colloid chemistry, e.g. the production of colloidal materials or their solutions, not otherwise provided for; Making microcapsules or microballoons
    • B01J13/0004—Preparation of sols
    • B01J13/0008—Sols of inorganic materials in water
    • B01J13/0017—Sols of inorganic materials in water by extraction of ions from aqueous solutions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J13/00—Colloid chemistry, e.g. the production of colloidal materials or their solutions, not otherwise provided for; Making microcapsules or microballoons
    • B01J13/0004—Preparation of sols
    • B01J13/0026—Preparation of sols containing a liquid organic phase
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J13/00—Colloid chemistry, e.g. the production of colloidal materials or their solutions, not otherwise provided for; Making microcapsules or microballoons
    • B01J13/0004—Preparation of sols
    • B01J13/0039—Post treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/128—Active materials comprising only Group I-II-IV-VI kesterite materials, e.g. Cu2ZnSnSe4 or Cu2ZnSnS4
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Colloid Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
FR1257242A 2012-07-26 2012-07-26 Film de chalcogenure(s) metallique(s) cristallise(s) a gros grains, solution colloidale de particules amorphes et procedes de preparation. Expired - Fee Related FR2993792B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR1257242A FR2993792B1 (fr) 2012-07-26 2012-07-26 Film de chalcogenure(s) metallique(s) cristallise(s) a gros grains, solution colloidale de particules amorphes et procedes de preparation.
PCT/FR2013/051597 WO2014016489A2 (fr) 2012-07-26 2013-07-04 Film de chalcogenure(s) metallique(s) cristallise(s) a gros grains, solution colloïdale de particules amorphes et procedes de preparation
JP2015523587A JP6312668B2 (ja) 2012-07-26 2013-07-04 非晶質粒子のコロイド溶液の調製方法
US14/413,316 US9731262B2 (en) 2012-07-26 2013-07-04 Large-grain crystallized metal chalcogenide film, colloidal solution of amorphous particles, and preparation methods
EP13745450.0A EP2877277B1 (fr) 2012-07-26 2013-07-04 Procédé de preparation de solution colloïdale de particules amorphes
US15/655,952 US10632441B2 (en) 2012-07-26 2017-07-21 Large-grain crystallized metal chalcogenide film, colloidal solution of amorphous particles, and preparation methods
JP2018052441A JP6629374B2 (ja) 2012-07-26 2018-03-20 粗大粒結晶化金属カルコゲニド膜、非晶質粒子のコロイド溶液および調製方法
US16/820,984 US20200215509A1 (en) 2012-07-26 2020-03-17 Method of manufacturing a large-grain crystallized metal chalcogenide film, and a crystallized metal chalcogenide film prepared using the method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1257242A FR2993792B1 (fr) 2012-07-26 2012-07-26 Film de chalcogenure(s) metallique(s) cristallise(s) a gros grains, solution colloidale de particules amorphes et procedes de preparation.

Publications (2)

Publication Number Publication Date
FR2993792A1 FR2993792A1 (fr) 2014-01-31
FR2993792B1 true FR2993792B1 (fr) 2017-09-15

Family

ID=47501354

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1257242A Expired - Fee Related FR2993792B1 (fr) 2012-07-26 2012-07-26 Film de chalcogenure(s) metallique(s) cristallise(s) a gros grains, solution colloidale de particules amorphes et procedes de preparation.

Country Status (5)

Country Link
US (3) US9731262B2 (OSRAM)
EP (1) EP2877277B1 (OSRAM)
JP (2) JP6312668B2 (OSRAM)
FR (1) FR2993792B1 (OSRAM)
WO (1) WO2014016489A2 (OSRAM)

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CN104028285A (zh) * 2014-05-17 2014-09-10 北京工业大学 Cu2ZnSnS4/La2Ti2O7异质结光催化复合材料的制备方法
FR3022074B1 (fr) 2014-06-05 2018-02-16 Imra Europe Sas Procede de preparation de couche mince d'absorbeur a base de sulfure(s) et seleniures(s) de cuivre, zinc et etain, couche mince recuite et dispositif photovoltaique obtenus.
US10888836B2 (en) * 2014-07-25 2021-01-12 Chemical and Metal Technologies LLC Extraction of target materials using CZTS sorbent
US10730012B2 (en) * 2014-07-25 2020-08-04 Chemical and Metal Technologies LLC Extraction of target materials using CZTS sorbent
US10283357B2 (en) * 2014-12-01 2019-05-07 The University Of Chicago Compositionally matched molecular solders for semiconductors
US9825214B1 (en) * 2016-06-22 2017-11-21 Mainstream Engineering Corporation Films and the like produced from particles by processing with electron beams, and a method for production thereof
CN111051390B (zh) * 2017-09-29 2022-03-22 韩国科学技术研究院 由无机高分子构成的非晶质纳米结构体及其制备方法
US11167262B2 (en) * 2017-09-29 2021-11-09 Korea Institute Of Science And Technology Amorphous nanostructure composed of inorganic polymer and method for manufacturing the same
KR102432093B1 (ko) * 2017-10-20 2022-08-16 한국과학기술연구원 무기 고분자로 이루어진 비정질 나노구조체 및 그 제조방법
KR102407233B1 (ko) * 2018-08-21 2022-06-10 한국과학기술연구원 지지체의 나노 사이즈 기공 내에 나노입자가 고르게 분산된 복합체 및 이의 제조방법
KR102458627B1 (ko) * 2018-08-21 2022-10-25 한국과학기술연구원 비정질 나노구조체를 이용하여 제조된 프랙탈 형상의 합금 나노구조체 및 그 제조방법
CN111474142B (zh) * 2020-05-21 2021-08-03 中南大学 一种利用近红外1550nm激光器检测微塑料浓度的方法
CN113321555A (zh) * 2021-07-05 2021-08-31 多农多收技术研究(江苏)有限公司 一种可以有效阻止粮食作物对土壤中镉吸收的药剂及方法
CN115108581B (zh) * 2022-07-05 2024-03-15 许昌学院 一种常温制备铜锌锡硫纳米晶的化学方法
CN115231608B (zh) * 2022-07-06 2024-03-15 许昌学院 一种常温制备多元硫化物纳米晶的化学方法
KR102671502B1 (ko) * 2022-11-28 2024-05-30 전남대학교산학협력단 이중 버퍼층을 구비하는 박막 태양전지 및 이의 제조방법
JP7761334B2 (ja) * 2023-05-25 2025-10-28 カルコジェニック株式会社 ＳｎＳ分散液及びその製造方法

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JP2005032475A (ja) 2003-07-08 2005-02-03 Sharp Corp 有機色素を光増感剤とする半導体薄膜電極、それを用いた色素増感型光電変換素子および光電気化学太陽電池
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JP2010140812A (ja) * 2008-12-12 2010-06-24 Sekisui Chem Co Ltd 機能素子及びその製造方法並びに色素増感太陽電池
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JP2013512311A (ja) * 2009-11-25 2013-04-11 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 結晶性銅カルコゲニドナノ粒子の水性製造方法、そのように製造されたナノ粒子、ならびにこれらのナノ粒子を組み込んだインクおよびコーテッド基板
WO2011065994A2 (en) * 2009-11-25 2011-06-03 E. I. Du Pont De Nemours And Company CZTS/Se PRECURSOR INKS AND METHODS FOR PREPARING CZTS/Se THIN FILMS AND CZTS/Se-BASED PHOTOVOLTAIC CELLS
JP5454214B2 (ja) 2010-02-22 2014-03-26 Ｔｄｋ株式会社 化合物半導体バッファ層の製造方法及び化合物半導体薄膜太陽電池の製造方法
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TWI460869B (zh) * 2011-12-30 2014-11-11 財團法人工業技術研究院 太陽能電池光吸收層之製法
FR3001467B1 (fr) * 2013-01-29 2016-05-13 Imra Europe Sas Procede de preparation de couche mince d'absorbeur a base de sulfure(s) de cuivre, zinc et etain, couche mince recuite et dispositif photovoltaique obtenu

Also Published As

Publication number Publication date
FR2993792A1 (fr) 2014-01-31
US20170320037A1 (en) 2017-11-09
US20200215509A1 (en) 2020-07-09
US10632441B2 (en) 2020-04-28
JP6312668B2 (ja) 2018-04-18
EP2877277A2 (fr) 2015-06-03
JP2018113471A (ja) 2018-07-19
EP2877277B1 (fr) 2020-10-14
US20150194548A1 (en) 2015-07-09
WO2014016489A3 (fr) 2014-09-12
JP2015532611A (ja) 2015-11-12
WO2014016489A2 (fr) 2014-01-30
US9731262B2 (en) 2017-08-15
JP6629374B2 (ja) 2020-01-15

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