FR2992980B1 - Substrat comprenant une couche de silicium et/ou de germanium et un ou plusieurs nanofils d'orientation perpendiculaire a la surface du substrat - Google Patents

Substrat comprenant une couche de silicium et/ou de germanium et un ou plusieurs nanofils d'orientation perpendiculaire a la surface du substrat Download PDF

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Publication number
FR2992980B1
FR2992980B1 FR1256374A FR1256374A FR2992980B1 FR 2992980 B1 FR2992980 B1 FR 2992980B1 FR 1256374 A FR1256374 A FR 1256374A FR 1256374 A FR1256374 A FR 1256374A FR 2992980 B1 FR2992980 B1 FR 2992980B1
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FR
France
Prior art keywords
substrate
nanowils
silicon
germanium layer
perpendicular orientation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1256374A
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English (en)
Other versions
FR2992980A1 (fr
Inventor
Elin Sondergard
Yann COHIN
Jean Christophe Harmand
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Saint Gobain Recherche SA
Centre National de la Recherche Scientifique CNRS
Original Assignee
Saint Gobain Recherche SA
Centre National de la Recherche Scientifique CNRS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saint Gobain Recherche SA, Centre National de la Recherche Scientifique CNRS filed Critical Saint Gobain Recherche SA
Priority to FR1256374A priority Critical patent/FR2992980B1/fr
Priority to PCT/FR2013/051552 priority patent/WO2014006319A1/fr
Priority to EP13744670.4A priority patent/EP2870278A1/fr
Priority to PCT/FR2013/051553 priority patent/WO2014006320A2/fr
Priority to EP13744671.2A priority patent/EP2870279A2/fr
Publication of FR2992980A1 publication Critical patent/FR2992980A1/fr
Application granted granted Critical
Publication of FR2992980B1 publication Critical patent/FR2992980B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00Single-crystal growth directly from the solid state
    • C30B1/02Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C30B1/023Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing from solids with amorphous structure
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02Epitaxial-layer growth
    • C30B23/025Epitaxial-layer growth characterised by the substrate
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/06Silicon
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/08Germanium
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/40AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605Products containing multiple oriented crystallites, e.g. columnar crystallites
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    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02373Group 14 semiconducting materials
    • H01L21/02381Silicon, silicon germanium, germanium
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    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02422Non-crystalline insulating materials, e.g. glass, polymers
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    • H01ELECTRIC ELEMENTS
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02439Materials
    • H01L21/02441Group 14 semiconducting materials
    • H01L21/0245Silicon, silicon germanium, germanium
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02365Forming inorganic semiconducting materials on a substrate
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    • H01L21/02439Materials
    • H01L21/02491Conductive materials
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    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02494Structure
    • H01L21/02496Layer structure
    • H01L21/02502Layer structure consisting of two layers
    • HELECTRICITY
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02516Crystal orientation
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02521Materials
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    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02603Nanowires
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    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02631Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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    • H01L21/02639Preparation of substrate for selective deposition
    • H01L21/02645Seed materials
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    • H01L21/02365Forming inorganic semiconducting materials on a substrate
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    • H01L21/02617Deposition types
    • H01L21/02636Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02653Vapour-liquid-solid growth
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    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669Nanowires or nanotubes
    • H01L29/0676Nanowires or nanotubes oriented perpendicular or at an angle to a substrate
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    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669Nanowires or nanotubes
    • H01L29/068Nanowires or nanotubes comprising a junction
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    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
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    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66439Unipolar field-effect transistors with a one- or zero-dimensional channel, e.g. quantum wire FET, in-plane gate transistor [IPG], single electron transistor [SET], striped channel transistor, Coulomb blockade transistor

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Thermal Sciences (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Silicon Compounds (AREA)
FR1256374A 2012-07-03 2012-07-03 Substrat comprenant une couche de silicium et/ou de germanium et un ou plusieurs nanofils d'orientation perpendiculaire a la surface du substrat Expired - Fee Related FR2992980B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR1256374A FR2992980B1 (fr) 2012-07-03 2012-07-03 Substrat comprenant une couche de silicium et/ou de germanium et un ou plusieurs nanofils d'orientation perpendiculaire a la surface du substrat
PCT/FR2013/051552 WO2014006319A1 (fr) 2012-07-03 2013-07-02 Substrat comprenant une couche de silicium et/ou de germanium et un ou plusieurs nanofils d'orientation perpendiculaire a la surface du substrat
EP13744670.4A EP2870278A1 (fr) 2012-07-03 2013-07-02 Substrat comprenant une couche de silicium et/ou de germanium et un ou plusieurs nanofils d'orientation perpendiculaire a la surface du substrat
PCT/FR2013/051553 WO2014006320A2 (fr) 2012-07-03 2013-07-02 Substrat comprenant une couche de silicium et/ou de germanium et un ou plusieurs objets de forme variee
EP13744671.2A EP2870279A2 (fr) 2012-07-03 2013-07-02 Substrat comprenant une couche de silicium et/ou de germanium et un ou plusieurs objets de forme variee

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1256374 2012-07-03
FR1256374A FR2992980B1 (fr) 2012-07-03 2012-07-03 Substrat comprenant une couche de silicium et/ou de germanium et un ou plusieurs nanofils d'orientation perpendiculaire a la surface du substrat

Publications (2)

Publication Number Publication Date
FR2992980A1 FR2992980A1 (fr) 2014-01-10
FR2992980B1 true FR2992980B1 (fr) 2018-04-13

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Application Number Title Priority Date Filing Date
FR1256374A Expired - Fee Related FR2992980B1 (fr) 2012-07-03 2012-07-03 Substrat comprenant une couche de silicium et/ou de germanium et un ou plusieurs nanofils d'orientation perpendiculaire a la surface du substrat

Country Status (3)

Country Link
EP (2) EP2870278A1 (fr)
FR (1) FR2992980B1 (fr)
WO (2) WO2014006319A1 (fr)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7687334B2 (en) * 2006-03-23 2010-03-30 Board Of Trustees Of The University Of Arkansas Fabrication of large grain polycrystalline silicon film by nano aluminum-induced crystallization of amorphous silicon
KR101541560B1 (ko) * 2007-10-26 2015-08-03 큐나노 에이비 이종 재료상의 나노와이어 성장
EP2541625A1 (fr) * 2010-02-25 2013-01-02 National University Corporation Hokkaido University Dispositif à semi-conducteurs et procédé de fabrication de dispositif à semi-conducteurs
KR101050467B1 (ko) * 2010-04-14 2011-07-20 삼성모바일디스플레이주식회사 다결정 실리콘층, 그 제조방법, 상기 다결정 실리층을 이용한 박막 트랜지스터 및 상기 박막 트랜지스터를 구비한 유기발광표시장치

Also Published As

Publication number Publication date
WO2014006320A3 (fr) 2014-04-03
EP2870279A2 (fr) 2015-05-13
EP2870278A1 (fr) 2015-05-13
WO2014006319A1 (fr) 2014-01-09
FR2992980A1 (fr) 2014-01-10
WO2014006320A2 (fr) 2014-01-09

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