WO2014006320A3 - Substrat comprenant une couche de silicium et/ou de germanium et un ou plusieurs objets de forme variee - Google Patents

Substrat comprenant une couche de silicium et/ou de germanium et un ou plusieurs objets de forme variee Download PDF

Info

Publication number
WO2014006320A3
WO2014006320A3 PCT/FR2013/051553 FR2013051553W WO2014006320A3 WO 2014006320 A3 WO2014006320 A3 WO 2014006320A3 FR 2013051553 W FR2013051553 W FR 2013051553W WO 2014006320 A3 WO2014006320 A3 WO 2014006320A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
layer
silicon
objects
germanium
Prior art date
Application number
PCT/FR2013/051553
Other languages
English (en)
Other versions
WO2014006320A2 (fr
Inventor
Elin Sondergard
Yann COHIN
Jean-Christophe Harmand
Original Assignee
Saint-Gobain Recherche
Centre National De La Recherche Scientifique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saint-Gobain Recherche, Centre National De La Recherche Scientifique filed Critical Saint-Gobain Recherche
Priority to EP13744671.2A priority Critical patent/EP2870279A2/fr
Publication of WO2014006320A2 publication Critical patent/WO2014006320A2/fr
Publication of WO2014006320A3 publication Critical patent/WO2014006320A3/fr

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C30B1/023—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing from solids with amorphous structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/025—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/08—Germanium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02516—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02603—Nanowires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H01L21/02645—Seed materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02653—Vapour-liquid-solid growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H01L29/0676—Nanowires or nanotubes oriented perpendicular or at an angle to a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H01L29/068—Nanowires or nanotubes comprising a junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66439—Unipolar field-effect transistors with a one- or zero-dimensional channel, e.g. quantum wire FET, in-plane gate transistor [IPG], single electron transistor [SET], striped channel transistor, Coulomb blockade transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Mathematical Physics (AREA)
  • Inorganic Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Silicon Compounds (AREA)

Abstract

La présente invention concerne un substrat comprenant une couche continue ou discontinue de silicium et/ou de germanium constituée d'un ou plusieurs grains monocristallins, et sur cette couche, un ou plusieurs objets de forme variée constitué de matériaux qui nécessitent des substrats présentant une orientation cristalline adéquate (111) pour leur croissance par épitaxie. L'invention concerne également un procédé de fabrication d'un tel substrat.
PCT/FR2013/051553 2012-07-03 2013-07-02 Substrat comprenant une couche de silicium et/ou de germanium et un ou plusieurs objets de forme variee WO2014006320A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP13744671.2A EP2870279A2 (fr) 2012-07-03 2013-07-02 Substrat comprenant une couche de silicium et/ou de germanium et un ou plusieurs objets de forme variee

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1256374 2012-07-03
FR1256374A FR2992980B1 (fr) 2012-07-03 2012-07-03 Substrat comprenant une couche de silicium et/ou de germanium et un ou plusieurs nanofils d'orientation perpendiculaire a la surface du substrat

Publications (2)

Publication Number Publication Date
WO2014006320A2 WO2014006320A2 (fr) 2014-01-09
WO2014006320A3 true WO2014006320A3 (fr) 2014-04-03

Family

ID=47003008

Family Applications (2)

Application Number Title Priority Date Filing Date
PCT/FR2013/051553 WO2014006320A2 (fr) 2012-07-03 2013-07-02 Substrat comprenant une couche de silicium et/ou de germanium et un ou plusieurs objets de forme variee
PCT/FR2013/051552 WO2014006319A1 (fr) 2012-07-03 2013-07-02 Substrat comprenant une couche de silicium et/ou de germanium et un ou plusieurs nanofils d'orientation perpendiculaire a la surface du substrat

Family Applications After (1)

Application Number Title Priority Date Filing Date
PCT/FR2013/051552 WO2014006319A1 (fr) 2012-07-03 2013-07-02 Substrat comprenant une couche de silicium et/ou de germanium et un ou plusieurs nanofils d'orientation perpendiculaire a la surface du substrat

Country Status (3)

Country Link
EP (2) EP2870279A2 (fr)
FR (1) FR2992980B1 (fr)
WO (2) WO2014006320A2 (fr)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070224788A1 (en) * 2006-03-23 2007-09-27 Board Of Trustees Of The University Of Arkansas Fabrication of large grain polycrystalline silicon film by nano aluminum-induced crystallization of amorphous silicon
WO2011105397A1 (fr) * 2010-02-25 2011-09-01 国立大学法人北海道大学 Dispositif à semi-conducteurs et procédé de fabrication de dispositif à semi-conducteurs
US20110253987A1 (en) * 2010-04-14 2011-10-20 Samsung Mobile Display Co., Ltd. Polysilicon layer, method of preparing the polysilicon layer, thin film transistor using the polysilicon layer, and organic light emitting display device including the thin film transistor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2200934A4 (fr) * 2007-10-26 2012-10-17 Qunano Ab Croissance de nanofils sur matériau dissimilaire

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070224788A1 (en) * 2006-03-23 2007-09-27 Board Of Trustees Of The University Of Arkansas Fabrication of large grain polycrystalline silicon film by nano aluminum-induced crystallization of amorphous silicon
WO2011105397A1 (fr) * 2010-02-25 2011-09-01 国立大学法人北海道大学 Dispositif à semi-conducteurs et procédé de fabrication de dispositif à semi-conducteurs
EP2541625A1 (fr) * 2010-02-25 2013-01-02 National University Corporation Hokkaido University Dispositif à semi-conducteurs et procédé de fabrication de dispositif à semi-conducteurs
US20110253987A1 (en) * 2010-04-14 2011-10-20 Samsung Mobile Display Co., Ltd. Polysilicon layer, method of preparing the polysilicon layer, thin film transistor using the polysilicon layer, and organic light emitting display device including the thin film transistor

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
GALOPIN E ET AL: "Morphology of self-catalyzed GaN nanowires and chronology of their formation by molecular beam epitaxy;Morphology of self-catalyzed GaN nanowires and chronology of their formation by molecular beam epitaxy", NANOTECHNOLOGY, IOP, BRISTOL, GB, vol. 22, no. 24, 21 April 2011 (2011-04-21), pages 245606, XP020205497, ISSN: 0957-4484, DOI: 10.1088/0957-4484/22/24/245606 *

Also Published As

Publication number Publication date
WO2014006319A1 (fr) 2014-01-09
FR2992980A1 (fr) 2014-01-10
FR2992980B1 (fr) 2018-04-13
EP2870278A1 (fr) 2015-05-13
EP2870279A2 (fr) 2015-05-13
WO2014006320A2 (fr) 2014-01-09

Similar Documents

Publication Publication Date Title
EP2570522A4 (fr) Substrat monocristallin à base de carbure de silicium épitaxial et son procédé de production
EP3228733A4 (fr) Procédé de production d'un monocristal de carbure de silicium et substrat monocristallin de carbure de silicium
WO2012057517A3 (fr) Dispositif à semi-conducteur composite et procédé de fabrication d'un semi-conducteur composite
EP3450595A4 (fr) Procédé de croissance épitaxiale en phase vapeur, et procédé de production de substrat équipé d'une couche épitaxiale
WO2012121940A3 (fr) Procédés de formation d'éléments polycristallins et structures formées grâce à de tels procédés
WO2012134092A3 (fr) Procédé de fabrication de lingot monocristallin et lingot monocristallin et tranche ainsi fabriqués
WO2011084596A3 (fr) Substrat de type plaque de nitrure de gallium pour dispositifs d'éclairage à semi-conducteurs, et systèmes et procédés associés
EP2230332A4 (fr) Lingot monocristallin de carbure de silicium ainsi que substrat et galette épitaxiale obtenus à partir du lingot monocristallin de carbure de silicium
WO2011155858A3 (fr) Procédé de fabrication de graphène
EP3591101A4 (fr) Procédé de production d'un substrat en carbure de silicium et substrat en carbure de silicium
EP3330415A4 (fr) Procédé de production de plaquette de monocristal de carbure de silicium épitaxiale
EP3007209A4 (fr) Substrat monocristallin de carbure de silicium pour tranche monocristalline de carbure de silicium épitaxiale, et procédé de fabrication de celui-ci
EP2555227A4 (fr) Tranche épitaxiale de silicium et procédé pour produire celle-ci, ainsi qu'une tranche soi fixée et procédé pour produire celles-ci
EP2514858A4 (fr) Substrat en cristal de nitrure du groupe iii, substrat en cristal de nitrure du groupe iii possédant une couche épitaxiale, dispositif semi-conducteur et son procédé de fabrication
EP3441506A4 (fr) SUBSTRAT DE SiC POLYCRISTALLIN ET PROCÉDÉ POUR SA FABRICATION
WO2010129360A3 (fr) Modification de surface de semi-conducteur
EP2548999A4 (fr) Cristal de nitrure de gallium, cristal de nitrure d'un élément du groupe 13, substrat cristallin et procédé de production de celui-ci
EP2700739A4 (fr) Substrat monocristallin épitaxial de carbure de silicium et son procédé de production
EP3561158A4 (fr) Procédé de culture d'un lingot de carbure de silicium monocristallin de grand diamètre
EP3666937A4 (fr) Substrat de carbure de silicium monocristallin à planéité élevée, à faible endommagement et de grand diamètre, et son procédé de fabrication
EP3721478A4 (fr) Tranches de germanium monocristallin et leur procédé de préparation, procédé de préparation de lingots et utilisation de tranches monocristallines
EP3366817A4 (fr) Substrat de base, procédé de fabrication d'un substrat de base, et procédé de fabrication de cristal de nitrure du groupe 13
EP3396030A4 (fr) Substrat semi-conducteur, et plaquette épitaxiale et son procédé de production
EP3260581A4 (fr) Procédé de production d'une tranche épitaxiale monocristalline de carbure de silicium et tranche épitaxiale monocristalline de carbure de silicium
EP3584822A4 (fr) Substrat stratifié de carbure de silicium et son procédé de production

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 13744671

Country of ref document: EP

Kind code of ref document: A2

WWE Wipo information: entry into national phase

Ref document number: 2013744671

Country of ref document: EP

NENP Non-entry into the national phase

Ref country code: DE