FR2992980A1 - Substrat comprenant une couche de silicium et/ou de germanium et un ou plusieurs nanofils d'orientation perpendiculaire a la surface du substrat - Google Patents

Substrat comprenant une couche de silicium et/ou de germanium et un ou plusieurs nanofils d'orientation perpendiculaire a la surface du substrat Download PDF

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Publication number
FR2992980A1
FR2992980A1 FR1256374A FR1256374A FR2992980A1 FR 2992980 A1 FR2992980 A1 FR 2992980A1 FR 1256374 A FR1256374 A FR 1256374A FR 1256374 A FR1256374 A FR 1256374A FR 2992980 A1 FR2992980 A1 FR 2992980A1
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France
Prior art keywords
substrate
silicon
nanowils
germanium layer
perpendicular orientation
Prior art date
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Granted
Application number
FR1256374A
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English (en)
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FR2992980B1 (fr
Inventor
Elin Sondergard
Yann Cohin
Jean Christophe Harmand
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Saint Gobain Recherche SA
Centre National de la Recherche Scientifique CNRS
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Saint Gobain Recherche SA
Centre National de la Recherche Scientifique CNRS
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Priority to FR1256374A priority Critical patent/FR2992980B1/fr
Priority to EP13744670.4A priority patent/EP2870278A1/fr
Priority to EP13744671.2A priority patent/EP2870279A2/fr
Priority to PCT/FR2013/051553 priority patent/WO2014006320A2/fr
Priority to PCT/FR2013/051552 priority patent/WO2014006319A1/fr
Publication of FR2992980A1 publication Critical patent/FR2992980A1/fr
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Publication of FR2992980B1 publication Critical patent/FR2992980B1/fr
Expired - Fee Related legal-status Critical Current
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C30B1/023—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing from solids with amorphous structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/025—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/08—Germanium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • H—ELECTRICITY
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    • H01L21/02367—Substrates
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    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
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    • H01L29/0676—Nanowires or nanotubes oriented perpendicular or at an angle to a substrate
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    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66439—Unipolar field-effect transistors with a one- or zero-dimensional channel, e.g. quantum wire FET, in-plane gate transistor [IPG], single electron transistor [SET], striped channel transistor, Coulomb blockade transistor

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  • Engineering & Computer Science (AREA)
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  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
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  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Mathematical Physics (AREA)
  • Inorganic Chemistry (AREA)
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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Silicon Compounds (AREA)

Abstract

La présente invention concerne un substrat comprenant une couche continue ou discontinue de silicium et/ou de germanium constituée d'un ou plusieurs grains monocristallins, et sur cette couche, un ou plusieurs nanofils dont l'axe longitudinal est orienté perpendiculairement à la surface du substrat. L'invention concerne également un procédé de fabrication d'un tel substrat.
FR1256374A 2012-07-03 2012-07-03 Substrat comprenant une couche de silicium et/ou de germanium et un ou plusieurs nanofils d'orientation perpendiculaire a la surface du substrat Expired - Fee Related FR2992980B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR1256374A FR2992980B1 (fr) 2012-07-03 2012-07-03 Substrat comprenant une couche de silicium et/ou de germanium et un ou plusieurs nanofils d'orientation perpendiculaire a la surface du substrat
EP13744670.4A EP2870278A1 (fr) 2012-07-03 2013-07-02 Substrat comprenant une couche de silicium et/ou de germanium et un ou plusieurs nanofils d'orientation perpendiculaire a la surface du substrat
EP13744671.2A EP2870279A2 (fr) 2012-07-03 2013-07-02 Substrat comprenant une couche de silicium et/ou de germanium et un ou plusieurs objets de forme variee
PCT/FR2013/051553 WO2014006320A2 (fr) 2012-07-03 2013-07-02 Substrat comprenant une couche de silicium et/ou de germanium et un ou plusieurs objets de forme variee
PCT/FR2013/051552 WO2014006319A1 (fr) 2012-07-03 2013-07-02 Substrat comprenant une couche de silicium et/ou de germanium et un ou plusieurs nanofils d'orientation perpendiculaire a la surface du substrat

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1256374A FR2992980B1 (fr) 2012-07-03 2012-07-03 Substrat comprenant une couche de silicium et/ou de germanium et un ou plusieurs nanofils d'orientation perpendiculaire a la surface du substrat
FR1256374 2012-07-03

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FR2992980A1 true FR2992980A1 (fr) 2014-01-10
FR2992980B1 FR2992980B1 (fr) 2018-04-13

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FR1256374A Expired - Fee Related FR2992980B1 (fr) 2012-07-03 2012-07-03 Substrat comprenant une couche de silicium et/ou de germanium et un ou plusieurs nanofils d'orientation perpendiculaire a la surface du substrat

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EP (2) EP2870278A1 (fr)
FR (1) FR2992980B1 (fr)
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011105397A1 (fr) * 2010-02-25 2011-09-01 国立大学法人北海道大学 Dispositif à semi-conducteurs et procédé de fabrication de dispositif à semi-conducteurs
US20120145990A1 (en) * 2007-10-26 2012-06-14 Qunano Ab Nanowire growth on dissimilar material

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7687334B2 (en) * 2006-03-23 2010-03-30 Board Of Trustees Of The University Of Arkansas Fabrication of large grain polycrystalline silicon film by nano aluminum-induced crystallization of amorphous silicon
KR101050467B1 (ko) * 2010-04-14 2011-07-20 삼성모바일디스플레이주식회사 다결정 실리콘층, 그 제조방법, 상기 다결정 실리층을 이용한 박막 트랜지스터 및 상기 박막 트랜지스터를 구비한 유기발광표시장치

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120145990A1 (en) * 2007-10-26 2012-06-14 Qunano Ab Nanowire growth on dissimilar material
WO2011105397A1 (fr) * 2010-02-25 2011-09-01 国立大学法人北海道大学 Dispositif à semi-conducteurs et procédé de fabrication de dispositif à semi-conducteurs
EP2541625A1 (fr) * 2010-02-25 2013-01-02 National University Corporation Hokkaido University Dispositif à semi-conducteurs et procédé de fabrication de dispositif à semi-conducteurs

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
GALOPIN E ET AL: "Morphology of self-catalyzed GaN nanowires and chronology of their formation by molecular beam epitaxy;Morphology of self-catalyzed GaN nanowires and chronology of their formation by molecular beam epitaxy", NANOTECHNOLOGY, IOP, BRISTOL, GB, vol. 22, no. 24, 21 April 2011 (2011-04-21), pages 245606, XP020205497, ISSN: 0957-4484, DOI: 10.1088/0957-4484/22/24/245606 *

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Publication number Publication date
WO2014006319A1 (fr) 2014-01-09
EP2870279A2 (fr) 2015-05-13
EP2870278A1 (fr) 2015-05-13
WO2014006320A3 (fr) 2014-04-03
WO2014006320A2 (fr) 2014-01-09
FR2992980B1 (fr) 2018-04-13

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